The Blue Laser Diode

Name: The Blue Laser Diode
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ISBN: 9783540665052

The Complete Story

By: Shuji Nakamura, Stephen Pearton, Gerhard Fasol

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Hardcover Published: 28th August 2000
ISBN: 9783540665052
Number Of Pages: 368

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Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.

Industry Reviews

FROM A REVIEW OF THE FIRST EDITION
"The technical chapters will be lapped up by semiconductor specialists keen to know more ... the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed."
(NEW SCIENTIST)

Introduction	p. 1
LEDs and LDs	p. 1
Group-III Nitride Compound Semiconductors	p. 3
Background	p. 7
Introduction	p. 7
Applications and Markets for Gallium Nitride Light Emitting Diodes (LEDs) and Lasers	p. 7
Who Were the Early Key Players in the Field?	p. 10
Why InGaN/AlGaN?	p. 11
Key Steps in the Discovery - Materials Issues	p. 13
Research History of Shuji Nakamura and Selected Steps in the Development of the Commercial Blue GaN LED	p. 15
Why Did Nichia Succeed Where Many Much Larger Multinationals and Research Groups Failed?	p. 17
Additional Comments on Blue LED Research	p. 20
A Short Summary of the Physics of Semiconductor Lasers and LEDs	p. 21
LEDs	p. 23
Lasers	p. 24
Physics of Gallium Nitride and Related Compounds	p. 29
Introduction	p. 29
Crystal Structures	p. 29
Wurtzite versus Zincblende Structure	p. 29
Growth of Wurtzite GaN onto Sapphire	p. 31
Growth of Cubic (Zincblende) GaN	p. 31
Growth of GaN onto Other Substrates	p. 32
Electronic Band Structure	p. 32
Fundamental Optical Transitions	p. 34
Band Structure Near the Fundamental Gap	p. 35
Band Parameters and Band Offsets for GaN, AlN, and InN	p. 36
Elastic Properties -Phonons	p. 38
Other Properties of Gallium Nitride	p. 38
Negative Electron Affinity (NEA)	p. 41
Pyroelectricity	p. 41
Transferred-Electron Effect (Gunn Effect)	p. 41
Summary of Properties	p. 42
GaN Growth	p. 47
Growth Methods for Crystalline GaN	p. 47
A New Two-Flow Metalorganic Chemical Vapor Deposition System for GaN Growth (TF-MOCVD)	p. 48
In Situ Monitoring of GaN Growth Using Interference Effects	p. 52
Introduction	p. 52
Experimental Details	p. 52
GaN Growth Without AlN Buffer Layer	p. 54
GaN Growth with AlN Buffer Layer	p. 59
Summary	p. 65
Analysis ofReal-Time Monitoring Using Interference Effects	p. 65
Introduction	p. 65
Experimental Details	p. 66
Results and Discussion	p. 67
Summary	p. 75
GaN Growth Using GaN Buffer Layer	p. 75
Introduction	p. 75
Experimental Details	p. 75
Results and Discussion	p. 76
In Situ Monitoring and Hall Measurements of GaN Growth with GaN Buffer Layers	p. 79
Introduction	p. 79
Experimental Details	p. 80
Results and Discussion	p. 80
Summary	p. 88
p-Type GaN Obtained by Electron Beam Irradiation	p. 89
Highly p-Type Mg-Doped GaN Films Grown with GaN Buffer Layers	p. 89
Introduction	p. 89
Experimental Details	p. 89
Results and Discussion	p. 90
High-Power GaN p-n Junction Blue Light Emitting Diodes	p. 95
Introduction	p. 95
Experimental Details	p. 95
Results and Discussion	p. 96
Summary	p. 101
n-Type GaN	p. 103
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers	p. 103
Experimental Details	p. 104
Si Doping	p. 104
Ge Doping	p. 108
Mobility as a Function ofthe Carrier Concentration	p. 111
Summary	p. 112
p-Type GaN	p. 113
History of p-Type GaN Research	p. 113
Thermal Annealing Effects on p-Type Mg-Doped GaN Films	p. 114
Introduction	p. 114
Experimental Details	p. 114
Results and Discussion	p. 114
Appendix	p. 119
Hole Compensation Mechanism of p-Type GaN Films	p. 120
Introduction	p. 120
Experimental Details	p. 120
Results and Discussion: Explanation of the Hole Compensation Mechanism of p-Type GaN	p. 121
Summary: Hydrogen Passivation and Annealing of p-Type GaN	p. 135
Properties and Effects of Hydrogen in GaN	p. 136
Present State ofKnowledge	p. 137
Passivation	p. 140
Hydrogen in As-Grown GaN	p. 141
Diffusion of H in Implanted or Plasma-Treated GaN	p. 145
Summary	p. 147
InGaN	p. 149
Introductory Remarks: The Role of Lattice Mismatch	p. 149
High-Quality InGaN Films Grown on GaN Films	p. 150
Introduction: InGaN on GaN	p. 150
Experimental Details: InGaN on GaN	p. 151
Results and Discussion: InGaN on GaN	p. 151
Summary: InGaN on GaN	p. 154
Si-Doped InGaN Films Grown on GaN Films	p. 155
Introduction: Si-Doped InGaN on GaN	p. 155
Experimental Details: Si-Doped InGaN on GaN	p. 155
Results and Discussion: Si-Doped InGaN on GaN	p. 155
Summary: Si-Doped InGaN on GaN	p. 159
Cd-Doped InGaN Films Grown on GaN Films	p. 160
Introduction: Cd-doped InGaN on GaN	p. 160
Experimental Details	p. 161
Results and Discussion	p. 161
Summary: Cd-Doped InGaN	p. 166
<$>{\rm In}_x{\rm Ga}_{1-x} {\rm N}/{\rm In}_y{\rm Ga}_{1-y}{\rm N}<$> Superlattices Grown on GaN Films	p. 166
Introduction: <$>{\rm In}_x{\rm Ga}_{1-x} {\rm N}/{\rm In}_y{\rm Ga}_{1-y}{\rm N}<$> Superlattices	p. 166
Experiments: <$>{\rm In}_x{\rm Ga}_{1-x} {\rm N}/{\rm In}_y{\rm Ga}_{1-y}{\rm N}<$> Superlattices	p. 167
Results and Discussion: <$>{\rm In}_x{\rm Ga}_{1-x} {\rm N}/{\rm In}_y{\rm Ga}_{1-y}{\rm N}<$> Superlattices	p. 167
Summary: In_xGa_1-xN/In_yGa_1-yN Superlattices	p. 174
Growth of <$>{\rm In}_x{\rm Ga}_{1-x}{\rm N}<$> Compound Semiconductors and High-Power InGaN/AlGaN Double Heterostructure Violet Light Emitting Diodes	p. 174
Introduction	p. 174
Experimental Details	p. 174
Growth and Properties of <$>{\rm In}_x{\rm Ga}_{1-x}{\rm N}<$> Compound Semiconductors	p. 177
High Power InGaN/AlGaN Double Heterostructure Violet Light Emitting Diodes	p. 181
Summary	p. 183
p-GaN/n-InGaN/n-GaN Double-Heterostructure Blue Light Emitting Diodes	p. 184
Experimental Details	p. 184
Results and Discussion	p. 184
Summary	p. 188
High-Power InGaN/GaN Double-Heterostructure Violet Light Emitting Diodes	p. 188
Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs	p. 193
Zn-Doped InGaN Growth and InGaN/AlGaN Double-Heterostructure Blue Light Emitting Diodes	p. 193
Introduction	p. 193
Experimental Details	p. 194
Zn-Doped InGaN	p. 194
InGaN/AlGaN DH Blue LEDs	p. 198
Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue Light Emitting Diodes	p. 201
High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Green Light Emitting Diodes	p. 203
A Bright Future for Blue-Green LEDs	p. 207
Introduction	p. 207
GaN Growth	p. 209
InGaN	p. 209
InGaN/AlGaN DH LED	p. 209
Summary	p. 214
InGaN Single-Quantum-Well LEDs	p. 215
High-Brightness InGaN Blue, Green, and Yellow LEDs with Quantum-Well Structures	p. 215
Introduction	p. 215
Experimental Details	p. 216
Results and Discussion	p. 217
Summary	p. 220
High-Power InGaN Single-Quantum-Well Blue and Violet Light Emitting Diodes	p. 220
Super-Bright Green InGaN Single-Quantum-Well Light Emitting Diodes	p. 223
Introduction	p. 223
Experimental Details	p. 224
Results and Discussion	p. 225
Summary	p. 229
White LEDs	p. 230
Room-Temperature Pulsed Operation of Laser Diodes	p. 237
InGaN-Based Multi-Quantum-Well Laser Diodes	p. 237
Introduction	p. 237
Experimental Deatils	p. 237
Results and Discussion	p. 239
Summary	p. 242
InGaN Multi-Quantum-Well Laser Diodes with Cleaved Mirror Cavity Facets	p. 242
Introduction	p. 242
Experimental Details	p. 242
Results and Discussion	p. 244
Summary	p. 247
InGaN Multi-Quantum-Well Laser Diodes Grown on MgAl₂O₄ Substrates	p. 247
Characteristics of InGaN Multi-Quantum-Well Laser Diodes	p. 252
The First III-V-Nitride-Based Violet Laser Diodes	p. 256
Introduction	p. 256
Experimental Details	p. 256
Results and Discussion	p. 258
Summary	p. 262
Optical Gain and Carrier Lifetime of InGaN Multi-Quantum-Well Laser Diodes	p. 262
Ridge-Geometry InGaN Multi-Quantum-Well Laser Diodes	p. 268
Longitudinal Mode Spectra and Ultrashort Pulse Generation of InGaN Multi-Quantum-Well Laser Diodes	p. 273
Emission Mechanisms of LEDs and LDs	p. 279
InGaN Single-Quantum-Well (SQW)-Structure LEDs	p. 279
Emission Mechanism of SQW LEDs	p. 281
InGaN Multi-Quantum-Well (MQW)-Structure LDs	p. 284
Summary	p. 289
Room Temperature CW Operation of InGaN MQW LDs	p. 291
First Continuous-Wave Operation of InGaN Multi-Quantum-Well-Structure Laser Diodes at 233 K	p. 291
First Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well-Structure Laser Diodes	p. 296
RT CW Operation of InGaN MQW LDs with a Long Lifetime	p. 301
Blue/Green Semiconductor Laser	p. 305
Blue/Green LEDs	p. 305
Bluish-Purple LDs	p. 307
Summary	p. 313
RT CW InGaN MQW LDs with improved Lifetime	p. 314
Latest Results: Lasers with Self-Organized InGaN Quantum Dots	p. 319
Introduction	p. 319
Fabrication	p. 319
Emission Spectra	p. 320
Self-Organized InGaN Quantum Dots	p. 325
Advances in LEDs	p. 326
Advances in Laser Diodes	p. 328
Conclusions	p. 335
Summary	p. 335
Outlook	p. 336
Appendix	p. 339
Biographies	p. 343
Shuji Nakamura	p. 343
Gerhard Fasol	p. 344
Stephen Pearton	p. 345
References	p. 347
Index	p. 361
Table of Contents provided by Publisher. All Rights Reserved.

ISBN: 9783540665052
ISBN-10: 3540665056
Audience: General
Format: Hardcover
Language: English
Number Of Pages: 368
Published: 28th August 2000
Publisher: Springer-Verlag Berlin and Heidelberg Gmbh & Co. Kg
Country of Publication: DE
Dimensions (cm): 24.16 x 16.33 x 2.21
Weight (kg): 0.85
Edition Number: 2
Edition Type: Revised