Systematic Analysis of Bipolar and MOS Transistors

By: Ugur Cilingiroglu

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Hardcover | 1 December 1993

At a Glance

Hardcover
248 Pages

Dimensions(cm)
24.13 x 16.51 x 1.91

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Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.

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You Can Find This Book In

Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Transistors Semi-Conductors & Super-Conductors Circuits & Components Energy Technology & Engineering Electrical Engineering Technology in General

Preface	p. ix
Background	p. 1
Fundamental Concepts and Equations	p. 1
Constituents of a Semiconductor Crystal	p. 1
Poisson's Equation	p. 4
Current Density Equations	p. 6
Continuity Equations	p. 12
More on Energy-Band Diagrams	p. 18
Thermal Equilibrium	p. 21
General Equilibrium Properties of Semiconductors	p. 22
Analysis in Equilibrium	p. 28
Nonequilibrium	p. 34
Injection Level	p. 34
The Shockley-Read-Hall Theory of Trapping	p. 35
Analysis of a Bulk Region in Low-Level Injection	p. 38
Extending the Fermi Formalism to Nonequilibrium	p. 47
Problems	p. 48
References	p. 59
Bipolar Junction Transistors	p. 61
BJTs in Thermal Equilibrium	p. 61
BJTs Under Bias	p. 65
Fundamentals of the Nonequilibrium Analysis	p. 66
Bulk Current Components	p. 69
Transition Region Current Components	p. 72
The Characteristic Equations of a BJT	p. 74
Forward Active Operation	p. 76
Modeling for Nonuniform Doping Profiles	p. 81
The Early Effect	p. 85
High-Bias Effects	p. 89
Base Resistance and Emitter Current Crowding	p. 89
High-Level Injection Effects	p. 95
Impact Ionization, Avalanche Multiplication, and Junction Breakdown	p. 112
BJT Dynamics	p. 116
The Quasistatic BJT Behavior	p. 119
BJT Equivalent Circuits	p. 125
Problems	p. 130
References	p. 143
Metal-Oxide-Semiconductor Transistors	p. 145
Basic MOSFET Structure	p. 145
MOSFET Under Bias	p. 146
Fundamentals of Nonequilibrium Analysis	p. 146
Analysis of the Surface Space-Charge Region	p. 150
A General Strong Inversion Model	p. 165
Simplified Strong Inversion Models	p. 172
A Subthreshold Model	p. 174
p-Channel MOSFET	p. 177
Fundamentals of Structural Optimization	p. 182
Design Constraints	p. 182
Threshold Adjustment	p. 188
Secondary Effects	p. 193
Velocity Saturation	p. 193
Channel-Length Modulation	p. 194
Punch-Through	p. 196
Short-Channel and Narrow-Channel Effects	p. 202
Impact Ionization and Avalanche Breakdown	p. 206
MOSFET Dynamics	p. 208
Problems	p. 217
References	p. 228
Table of Contents provided by Syndetics. All Rights Reserved.

Systematic Analysis of Bipolar and MOS Transistors

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Hardcover

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