Spontaneous Ordering in Semiconductor Alloys - Angelo Mascarenhas

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Spontaneous Ordering in Semiconductor Alloys

By: Angelo Mascarenhas (Editor)

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Hardcover | 30 April 2002

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500 Pages

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25.4 x 17.78 x 2.69

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This book presents a comprehensive account of the phenomenon of spontaneous ordering. The phenomenon, which can be categorized as a self-organized process, is observed to occur spontaneously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great deal of interest in learning how to control this phenomenon so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability to provide an experimental environment of controlled alloy statistical fluctuations. As such, it impacts areas of semiconductor science and technology related to the materials science of epitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices.

During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made at providing theoretical models, both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade.

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Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Semi-Conductors & Super-Conductors Energy Technology & Engineering Electrical Engineering Mechanical Engineering & Materials Materials Science Science Physics

Electricity Industrial Chemistry & Manufacturing Technologies Metals Technology & Metallurgy Other Technologies & Applied Sciences Applied Optics Materials & States of Matter

Basic Aspects of Atomic Ordering in III-V Semiconductor Alloys
Introduction	p. 1
CuPt-B Atomic Ordering	p. 5
Bandgap Anomaly and CuPt-B Ordering	p. 5
Growth Conditions Dependence of CuPt-B Ordering	p. 8
Bond-Length Difference	p. 13
Substrate Orientation Dependence	p. 14
Degree of Ordering	p. 20
TP-A and CuPt-A Atomic Ordering	p. 22
TP-A Ordering	p. 22
CuPt-A Ordering	p. 27
Ordering Mechanisms	p. 29
CuPt-B, TP-A, and CuPt-A Ordering	p. 29
Famatinite, Chalcopyrite, and CuAu-I Ordering	p. 35
Concluding Remarks	p. 36
References	p. 38
The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys
Introduction	p. 45
Atomic Ordering in Group III-V Antimonide Semiconductors Alloys	p. 49
Nature of Ordering	p. 49
Origins of Atomic Ordering in Semiconductor Alloys	p. 63
CuPt-Type Atomic Ordering	p. 63
Antiphase Superlattice in MBE GaAsSb Grown at High Temperature	p. 85
CuAu-I Type Ordering in Layers Grown on (110) Substrates	p. 89
CuAu-I and Chalcopyrite Ordering in Layers Grown in (001) Substrates	p. 90
Conclusions	p. 90
References	p. 92
Effects of the Surface on CuPt Ordering During OMVPE Growth
Introduction	p. 99
Review of the Ordering Processes	p. 101
Effects of Surfaces	p. 102
Temperature	p. 103
Partial Pressure of the P Precursor	p. 104
Effects of Surfactants	p. 107
Tellurium	p. 108
Antimony	p. 109
Summary	p. 113
References	p. 115
X-Ray Diffraction Analysis of Ordering in Epitaxial III-V Alloys
Introduction	p. 119
Overview of X-Ray Diffraction Theory	p. 120
Kinematical Diffraction Theory	p. 120
Dynamical Diffraction Theory	p. 123
Structure Factor	p. 125
Long-Range Order	p. 126
Long-Range Order Parameter	p. 126
Structure Factor of an Ordered Crystal	p. 127
Measurement of the Long-Range Order Parameter	p. 130
Reciprocal Space Mapping of Ordered Domains	p. 132
Short-Range Order	p. 134
Short-Range Order Diffuse Intensity and Order Parameters	p. 134
Coexistence of Long- and Short-Range Order	p. 139
Measurement of SRO in Epitaxial III-V Alloys	p. 139
Lateral Compositional Modulation	p. 142
Summary	p. 144
References	p. 144
Surface Morphology and Formation of Antiphase Boundaries in Ordered (GaIn)P--A TEM Study
Introduction	p. 147
Transmission Electron Microscopy	p. 149
Experimental	p. 151
Results and Discussion	p. 151
Summary	p. 161
References	p. 162
X-Ray Characterization of CuPt Ordered III-V Ternary Alloys
Introduction	p. 165
Results from TED and TEM Studies	p. 167
X-Ray Diffraction Measurements	p. 168
Structural Model and Diffraction Theory	p. 170
Structural Model	p. 170
Diffraction Theory	p. 172
Effect of the Atomic Displacements	p. 175
Examples of Data Analyses	p. 180
Single-Variant Ordered Films	p. 180
Double-Variant Ordered Films	p. 183
Determination of the Order Parameter	p. 190
Summary	p. 192
References	p. 192
Diffraction and Imaging of Ordered Semiconductors
Introduction	p. 195
TEM	p. 195
Epitaxy	p. 199
Ordering	p. 200
Ordered Semiconductors	p. 202
GaInP	p. 202
GaInAs	p. 210
CuInSe[subscript 2]	p. 212
Dynamical Diffraction	p. 214
Bloch Waves	p. 215
Eigenfunctions	p. 216
Crystal Potential	p. 217
Analysis	p. 219
Zincblende	p. 220
CuPt-B Ordering	p. 220
Lamellar Ordering	p. 227
CuAu-I Ordering	p. 228
Chalcopyrite Ordering	p. 230
Conclusions	p. 231
References	p. 231
X-Ray Analysis of the Short-Range Order in the Ordered-Alloy Domains of Epitaxial (Ga,In)P Layers by DAFS of Superlattice Reflections
Introduction	p. 235
Specimens	p. 236
Experiment	p. 237
Quantitative DAFS Analysis	p. 239
Discussion	p. 253
Conclusions	p. 255
References	p. 255
Ballistic Electron Emission Microscopy and Spectroscopy Study of Ordering-Induced Band Structure Effects in Ga[subscript 0.52]In[subscript 0.48]P
Introduction	p. 257
BEEM Technique	p. 260
Experimental Set-Up	p. 262
Results and Analysis	p. 263
Conclusions	p. 269
References	p. 269
Cross-Sectional Scanning Tunneling Microscopy as a Probe of Local Order in Semiconductor Alloys
Introduction	p. 271
References	p. 282
The Physics of Tunable Disorder in Semiconductor Alloys
Introduction	p. 283
Ordering Induced Band Gap Reduction and Valence Band Splitting	p. 285
Band Gap Reduction	p. 285
Valence Band Splitting	p. 290
Ordering Induced Optical Anisotropy or Polarization	p. 292
Linear Polarization	p. 292
Circular (Spin) Polarization	p. 295
Ordering Induced Changes in Effective Mass	p. 297
Reflectance Difference Spectroscopy Study of Ordered Structure	p. 301
Statistical Aspects of Spontaneous Ordering	p. 304
Band Offset Between Ordered GaInP and GaAs	p. 308
Novel Superlattices--Orientational Superlattices	p. 312
Extrinsic Effects in Ordered GaInP	p. 316
Conclusions	p. 321
References	p. 322
Spectroscopic Study of the Interface and Band Alignment at the GaInP(Partially Ordered)/GaAs Heterojunction under High Pressure and High Magnetic Field
Introduction	p. 328
Background	p. 330
Effect of Ordering on Band Structure of GaInP and Its Band Offset with GaAs	p. 331
Effect of Pressure on Band Structure of GaAs and GaInP	p. 333
Effect of Magnetic Field on Free and Bound Carriers	p. 335
Sample Preparation and Characterization	p. 339
S Series	p. 339
T Series	p. 339
V Series	p. 341
Experimental Details	p. 342
Experimental Results	p. 344
Band Offsets in Sample Showing Upconversion (T Series)	p. 344
Band Offsets in GaInP Sample Which Shows No Upconversion at Ambient Pressure (S1)	p. 347
Band Alignment and Emission from po-GaInP/GaAs/poGaInP Quantum Wells (V Series)	p. 354
Discussion	p. 361
Conclusions	p. 362
References	p. 363
Polarization Effects in the (Electro)absorption of Ordered GaInP and Their Device Applications
Introduction	p. 365
Ordering Induced Effects on the Optical Transitions in GaInP	p. 366
Crystallographic and Electronic Structure	p. 366
Polarization Anistropy of the Optical Properties	p. 367
Polarization dependent Electro-Absorption	p. 370
Franz-Keldysh Effect	p. 370
Experimental Setup	p. 371
Comparison Between Absorption and Electro-Absorption	p. 372
Fundamental Band Gap	p. 373
Backfolded States--Fingerprints of Ordering	p. 376
Discussion of the Results	p. 377
Polarization-Sensitive Devices	p. 379
Polarization Detector	p. 382
Polarization Switch	p. 383
Conclusions and Outlook	p. 387
References	p. 388
Phonons in Ordered Semiconductor Alloys
Introduction	p. 391
Raman Scattering Studies	p. 394
Raman Scattering form the (001) Surface	p. 397
Micro-Raman Scattering	p. 400
Infrared Studies	p. 414
IR Reflection	p. 414
IR Transmission	p. 417
Phonons in Double Variant Ordered GaInP[subscript 2]	p. 418
Conclusions	p. 420
References	p. 420
Effects of Ordering on Physical Properties of Semiconductor Alloys
Introduction	p. 423
Dependence on the Degree of LRO	p. 425
Energy Level Shift and Splitting	p. 427
X-Ray Structure Factor	p. 431
Electric Field Gradient	p. 434
Coupling of Ordering with Strain	p. 437
Optical Anistropy in Ordered Alloys	p. 439
Spin Polarization in Ordered Alloys	p. 440
Effects of Stacking Faults	p. 443
Summary	p. 448
References	p. 448
Polarization Charges at Spontaneously Ordered (In,Ga)P/GaAs Interfaces
Background	p. 451
Band Offsets	p. 452
Piezoelectric Polarization of (In,Ga)P	p. 452
C-V Experiments	p. 453
Outline	p. 454
Carrier Distribution at Interfaces	p. 454
C-V Method	p. 454
n-Type GaAs/(In,Ga)P/GaAs Heterojunctions	p. 455
p-Type GaAs/(In,Ga)P/GaAs Heterojunctions	p. 457
Effect of Spontaneous Ordering	p. 458
GaAs-on-(In,Ga)P Interface	p. 458
(In,Ga)P-on-GaAs Interface	p. 459
Band Offsets and Interfacial Charges	p. 461
Simulation of Carrier Distributions at Heterointerfaces	p. 461
GaAs-on-(In,Ga)P Interface	p. 462
(In,Ga)P-on-GaAs Interface	p. 463
Order-Induced Polarization Charges	p. 464
Conclusions	p. 465
References	p. 467
Author Index	p. 469
Subject Index	p. 471
Table of Contents provided by Syndetics. All Rights Reserved.

Spontaneous Ordering in Semiconductor Alloys

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