Semiconductors for Solar Cells

By: Hans Joachim Moller

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Hardcover | 31 March 1993

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356 Pages

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24.13 x 16.51 x 2.54

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This reference is designed for scientists and engineers in the field, and also suitable for students of semiconductor physics, materials science and solar technology. It provides an understanding of the fundamental problems underlying the relationship between physics, materials science and technology aspects of solar cell development. It bridges the gap between materials science and device design for solar cells.

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Preface
Introduction	p. 1
Historical Background	p. 1
Technical Concepts for Solar Energy Conversion	p. 3
Physical Principles of Photovoltaic Energy Conversion	p. 9
Solar Spectrum	p. 9
Absorption of Light in Semiconductors	p. 12
Semiconductors Under Illumination	p. 19
Photoconductivity	p. 19
The pn Junction	p. 21
Fundamental Solar Cell Parameters	p. 31
Efficiency of an Ideal pn-Junction Cell	p. 33
Design of a Solar Cell	p. 37
Efficiency Losses	p. 41
Technology of Solar Cell Devices	p. 51
Single-Junction Devices	p. 51
Heterojunction Devices	p. 58
Schottky Barrier and MIS Solar Cells	p. 61
Thin-Film Solar Cells	p. 65
Multigap Structures	p. 68
Concentrator Cells	p. 71
Fundamental Material Parameters	p. 77
Mobility of Charge Carriers	p. 78
Recombination of Charge Carriers	p. 83
Band-Band Recombination	p. 84
Shockley-Read-Hall Statistics	p. 86
Recombination at Grain Boundaries	p. 90
Recombination at Surfaces and Dislocations	p. 99
Electron Beam-Induced Current Technique	p. 102
Structural and Electrical Properties of Lattice Defects	p. 107
Point Defects	p. 107
Intrinsic Point Defects and Diffusion	p. 108
Carbon and Oxygen	p. 125
Transition Metals in Silicon	p. 138
Hydrogen and Passivation	p. 146
Radiation-Induced Defects	p. 153
Dislocations	p. 160
Mobility	p. 161
Multiplication	p. 167
Grain Boundaries	p. 169
Atomic Structure and Electronic States	p. 170
Electrical Transport Over Barriers	p. 180
Defect Interaction	p. 190
Segregation	p. 191
Growth Kinetics	p. 197
Grain Boundary Contamination	p. 200
Interface Diffusion	p. 207
Polycrystalline Semiconductors	p. 211
Electrical Transport in Thin Films	p. 211
Conductivity in Silicon and Germanium	p. 216
Monocrystalline and Polycrystalline Silicon	p. 225
High-Quality Silicon	p. 225
Czochralski and Float-Zone Techniques	p. 226
Material Properties	p. 229
Polycrystalline Silicon	p. 232
Ingot Technology	p. 235
Ribbon Growth Technologies	p. 237
Microstructure and Electronic Properties	p. 245
Thin-Film Silicon	p. 263
Single Crystal and Epitaxial Compound Semiconductors	p. 267
III-V Compounds	p. 269
Single-Crystal Growth Techniques	p. 270
Defects in GaAs	p. 274
Epitaxy of GaAs and Related Ternary Compounds	p. 277
Growth Defects in Epitaxial Layers	p. 278
Thin-Film Compound Semiconductors	p. 285
II-VI Compounds	p. 286
Thin-Film Preparation and Microstructure	p. 287
Electrical Properties	p. 289
Chalcopyrite Semiconductors	p. 290
Crystal and Film Growth Techniques	p. 293
Electro-Optical Properties and Lattice Defects	p. 296
Interface Properties and Oxidation Behavior	p. 308
Amorphous Thin-Film Semiconductors	p. 313
Structural and Electro-Optical Properties of Amorphous Silicon	p. 314
Band Gap States	p. 314
Doping in a-Si:H	p. 320
Recombination and Electrical Transport	p. 324
Optical Absorption	p. 327
Amorphous Silicon Alloys	p. 330
Stability and Light-Induced Degradation	p. 331
Index	p. 339
Table of Contents provided by Blackwell. All Rights Reserved.

Semiconductors for Solar Cells

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Hardcover

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