| Foreword | p. xi |
| Preface | p. xiii |
| Introduction to Long-Wavelength Infrared Quantum Detectors | p. 1 |
| Background | p. 1 |
| Quantum Detectors Based on Semiconductor Quantum Wells and Superlattices | p. 2 |
| GaAs/Al[subscript x]Ga[subscript 1-x]As Multiple Quantum Wells | p. 8 |
| InAs/Ga[subscript 1-x]In[subscript x]Sb Strained-Layer Superlattices | p. 11 |
| Si/Si[subscript 1-x]Ge[subscript x] Multiple Quantum Wells | p. 13 |
| Conclusion | p. 14 |
| References | p. 15 |
| Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wells | p. 19 |
| Introduction | p. 19 |
| The Effective Mass Equation | p. 20 |
| Conduction Band States in Quantum Wells | p. 22 |
| The Finite Difference Method | p. 25 |
| Valence Band States | p. 28 |
| Bulk k - p Theory | p. 29 |
| Application of the 4 [times] 4 k - p Theory to the Valence Bands in Quantum Wells | p. 30 |
| Effect of Strain on the Conduction and Valence Bands of Quantum Wells | p. 31 |
| Conduction Band States | p. 33 |
| Valence Band States | p. 33 |
| Bulk Results | p. 35 |
| Absorption Coefficient for the Conduction Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wells | p. 37 |
| Temperature and Nonparabolicity Effects on the Intersubband Transition | p. 40 |
| Many-Body Effects on the Intersubband Transition | p. 43 |
| Conclusion | p. 52 |
| Acknowledgments | p. 52 |
| References | p. 53 |
| Long-Wavelength Infrared Photodetectors Based on Intersubband Transitions in III-V Semiconductor Quantum Wells | p. 55 |
| Introduction | p. 55 |
| Purpose and Scope | p. 55 |
| Quantum Well Detector Basics | p. 57 |
| Organization | p. 58 |
| Fundamentals of Infrared Detection for Staring Applications | p. 59 |
| The Development of GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectors | p. 62 |
| Overview | p. 63 |
| Principles of Operation | p. 65 |
| Development of the Basic Device | p. 66 |
| Long-Wavelength, Wide-Bandwidth Detectors | p. 69 |
| Low Dark Current Devices | p. 71 |
| High-Efficiency Detectors | p. 74 |
| Performance Models for GaAs/AlGaAs Multiple Quantum Well Photconductive Detectors | p. 77 |
| Dark Current | p. 78 |
| Collection Efficiency | p. 89 |
| Correlated Noise | p. 94 |
| Device Optimization for Applications | p. 95 |
| Dependence of NETD on Quantum Well Detector Parameters | p. 96 |
| Two Optimization Examples | p. 101 |
| Conclusion | p. 106 |
| References | p. 106 |
| Far-Infrared Materials Based on InAs/GaInSb Type II, Strained-Layer Superlattices | p. 109 |
| Introduction | p. 109 |
| Electronic Structure Theory of Semiconductor Superlattices | p. 113 |
| Overview of Theoretical Electronic Structure Methods | p. 113 |
| k - p Electronic Structure Theory of Semiconductor Superlattices | p. 114 |
| InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Strained-Layer Superlattices | p. 122 |
| Introduction | p. 122 |
| Optical Properties of InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlattices | p. 124 |
| Electronic and Transport Properties of InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlattices | p. 130 |
| Growth Considerations for InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlattices | p. 131 |
| Experimental Situation | p. 131 |
| Conclusion | p. 136 |
| References | p. 136 |
| Infrared Detectors Using SiGe/Si Quantum Well Structures | p. 139 |
| Introduction | p. 140 |
| Growth of SiGe Strained Layers | p. 141 |
| Band Structures and Properties of SiGe Layers Under Strain | p. 144 |
| Conduction Band Splitting of Si and Ge Under Strain | p. 144 |
| Valence Band Splitting of Strained Si and Ge | p. 145 |
| Band Offsets for Strained Si/Ge Systems | p. 146 |
| Physics of Intersubband Transitions | p. 152 |
| Elements of Intersubband Transition of [Gamma]-Point Quantum Wells | p. 152 |
| Transition Between Superlattice Minibands | p. 156 |
| Many-Body Effects in Intersubband Transition | p. 158 |
| Electron Intersubband Transition of General Valley n-Type Quantum Wells | p. 160 |
| Experimental Observation of Intersubband Absorption of (100)- and (110)-Oriented Si and SiGe | p. 172 |
| p-Type Intersubband Transition | p. 180 |
| Intersubband Transitions in [delta]-Doped Quantum Wells | p. 184 |
| Tuning of Intersubband Transition Energy by Doping | p. 184 |
| Inter-Valence Band Transitions | p. 188 |
| p-Type Intersubband and Free Carrier Detectors | p. 194 |
| Photoresponse | p. 196 |
| Photoexcited Carrier Transport | p. 199 |
| Detectivity | p. 200 |
| Prospective | p. 201 |
| Conclusion | p. 202 |
| Acknowledgments | p. 202 |
| References | p. 202 |
| Type III Superlattices for Long-Wavelength Infrared Detectors: The HgTe/CdTe System | p. 207 |
| Introduction | p. 207 |
| Band Structure Calculations | p. 208 |
| Basic Materials Properties | p. 213 |
| Peculiarities of HgTe/CdTe Superlattice Growth | p. 213 |
| Structural Properties and Defects | p. 216 |
| Structural Stability and Interdiffusion | p. 219 |
| Absorption Coefficient | p. 222 |
| Magneto-Optics | p. 227 |
| Intrinsic Carrier Concentration and In-Plane Transport | p. 229 |
| Properties Directly Affecting Detector Performance | p. 235 |
| Extrinsic Doping and Carrier Concentration Control | p. 235 |
| Control of Bandgap in HgTe/CdTe Superlattices | p. 239 |
| Carrier Transport, Tunneling, and Charge Collection Efficiency in the Growth Direction | p. 242 |
| Minority Carrier Lifetime | p. 244 |
| HgTe/CdTe Detector Fabrication | p. 247 |
| Conclusion | p. 254 |
| References | p. 255 |
| Index | p. 261 |
| Table of Contents provided by Syndetics. All Rights Reserved. |
