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Semiconductor Quantum Wells and Superlattices for Long-wavelength Infrared Detectors : Artech House Materials Science Library - M. O. Manasreh

Semiconductor Quantum Wells and Superlattices for Long-wavelength Infrared Detectors

Artech House Materials Science Library

Hardcover Published: 19th December 1993
ISBN: 9780890066034
Number Of Pages: 280

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This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays. Includes 111 illustrations and 237 equations.

Forewordp. xi
Prefacep. xiii
Introduction to Long-Wavelength Infrared Quantum Detectorsp. 1
Backgroundp. 1
Quantum Detectors Based on Semiconductor Quantum Wells and Superlatticesp. 2
GaAs/Al[subscript x]Ga[subscript 1-x]As Multiple Quantum Wellsp. 8
InAs/Ga[subscript 1-x]In[subscript x]Sb Strained-Layer Superlatticesp. 11
Si/Si[subscript 1-x]Ge[subscript x] Multiple Quantum Wellsp. 13
Conclusionp. 14
Referencesp. 15
Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wellsp. 19
Introductionp. 19
The Effective Mass Equationp. 20
Conduction Band States in Quantum Wellsp. 22
The Finite Difference Methodp. 25
Valence Band Statesp. 28
Bulk k - p Theoryp. 29
Application of the 4 [times] 4 k - p Theory to the Valence Bands in Quantum Wellsp. 30
Effect of Strain on the Conduction and Valence Bands of Quantum Wellsp. 31
Conduction Band Statesp. 33
Valence Band Statesp. 33
Bulk Resultsp. 35
Absorption Coefficient for the Conduction Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wellsp. 37
Temperature and Nonparabolicity Effects on the Intersubband Transitionp. 40
Many-Body Effects on the Intersubband Transitionp. 43
Conclusionp. 52
Acknowledgmentsp. 52
Referencesp. 53
Long-Wavelength Infrared Photodetectors Based on Intersubband Transitions in III-V Semiconductor Quantum Wellsp. 55
Introductionp. 55
Purpose and Scopep. 55
Quantum Well Detector Basicsp. 57
Organizationp. 58
Fundamentals of Infrared Detection for Staring Applicationsp. 59
The Development of GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectorsp. 62
Overviewp. 63
Principles of Operationp. 65
Development of the Basic Devicep. 66
Long-Wavelength, Wide-Bandwidth Detectorsp. 69
Low Dark Current Devicesp. 71
High-Efficiency Detectorsp. 74
Performance Models for GaAs/AlGaAs Multiple Quantum Well Photconductive Detectorsp. 77
Dark Currentp. 78
Collection Efficiencyp. 89
Correlated Noisep. 94
Device Optimization for Applicationsp. 95
Dependence of NETD on Quantum Well Detector Parametersp. 96
Two Optimization Examplesp. 101
Conclusionp. 106
Referencesp. 106
Far-Infrared Materials Based on InAs/GaInSb Type II, Strained-Layer Superlatticesp. 109
Introductionp. 109
Electronic Structure Theory of Semiconductor Superlatticesp. 113
Overview of Theoretical Electronic Structure Methodsp. 113
k - p Electronic Structure Theory of Semiconductor Superlatticesp. 114
InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Strained-Layer Superlatticesp. 122
Introductionp. 122
Optical Properties of InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlatticesp. 124
Electronic and Transport Properties of InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlatticesp. 130
Growth Considerations for InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Superlatticesp. 131
Experimental Situationp. 131
Conclusionp. 136
Referencesp. 136
Infrared Detectors Using SiGe/Si Quantum Well Structuresp. 139
Introductionp. 140
Growth of SiGe Strained Layersp. 141
Band Structures and Properties of SiGe Layers Under Strainp. 144
Conduction Band Splitting of Si and Ge Under Strainp. 144
Valence Band Splitting of Strained Si and Gep. 145
Band Offsets for Strained Si/Ge Systemsp. 146
Physics of Intersubband Transitionsp. 152
Elements of Intersubband Transition of [Gamma]-Point Quantum Wellsp. 152
Transition Between Superlattice Minibandsp. 156
Many-Body Effects in Intersubband Transitionp. 158
Electron Intersubband Transition of General Valley n-Type Quantum Wellsp. 160
Experimental Observation of Intersubband Absorption of (100)- and (110)-Oriented Si and SiGep. 172
p-Type Intersubband Transitionp. 180
Intersubband Transitions in [delta]-Doped Quantum Wellsp. 184
Tuning of Intersubband Transition Energy by Dopingp. 184
Inter-Valence Band Transitionsp. 188
p-Type Intersubband and Free Carrier Detectorsp. 194
Photoresponsep. 196
Photoexcited Carrier Transportp. 199
Detectivityp. 200
Prospectivep. 201
Conclusionp. 202
Acknowledgmentsp. 202
Referencesp. 202
Type III Superlattices for Long-Wavelength Infrared Detectors: The HgTe/CdTe Systemp. 207
Introductionp. 207
Band Structure Calculationsp. 208
Basic Materials Propertiesp. 213
Peculiarities of HgTe/CdTe Superlattice Growthp. 213
Structural Properties and Defectsp. 216
Structural Stability and Interdiffusionp. 219
Absorption Coefficientp. 222
Magneto-Opticsp. 227
Intrinsic Carrier Concentration and In-Plane Transportp. 229
Properties Directly Affecting Detector Performancep. 235
Extrinsic Doping and Carrier Concentration Controlp. 235
Control of Bandgap in HgTe/CdTe Superlatticesp. 239
Carrier Transport, Tunneling, and Charge Collection Efficiency in the Growth Directionp. 242
Minority Carrier Lifetimep. 244
HgTe/CdTe Detector Fabricationp. 247
Conclusionp. 254
Referencesp. 255
Indexp. 261
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9780890066034
ISBN-10: 0890066035
Series: Artech House Materials Science Library
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 280
Published: 19th December 1993
Publisher: ARTECH HOUSE INC
Country of Publication: US
Dimensions (cm): 23.77 x 16.2  x 2.36
Weight (kg): 0.64

Earn 322 Qantas Points
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