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Semiconductor Interfaces at the Sub-Nanometer Scale : NATO Science Series E: - H.W.M. Salemink

Semiconductor Interfaces at the Sub-Nanometer Scale

NATO Science Series E:

By: H.W.M. Salemink (Editor), M.D. Pashley (Editor)

Hardcover Published: 31st July 1993
ISBN: 9780792323976
Number Of Pages: 256

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The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Surface Atomic Processes during Epitaxial Growthp. 1
Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductorsp. 11
Surface Chemistry in the Si/Ge GSMBE System Studied Using RHEEDp. 25
Diffusion of Si in [delta]-Doped GaAs Studied by Magneto Transportp. 35
Theory of Atomic-Scale Processes during Epitaxial Growth: Current Statusp. 45
A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxyp. 57
The Role of Surface Reconstructions in MBE Growth of GaAsp. 63
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Latticep. 75
Resonant Tunnelling via the Bound States of Shallow Donorsp. 83
Engineering of Semiconductor Heterostructures by Ultrathin Control Layersp. 89
Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructuresp. 105
Dipole Layers at GaAs Heterojunctions and Their Investigationp. 115
Clustering and Correlations on GaAs-Metal Interfacep. 121
Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfacesp. 127
Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Levelp. 139
Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Dopingp. 151
Group IV Strained Layer Systemsp. 161
MISFIT Accommodation during Heteroepitaxial Growthp. 173
Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEEDp. 181
Optical Properties of Imperfect Si-Ge Heterostructuresp. 191
[actual symbol not reproducible] Growth and Properties of the Ternary Systemp. 199
Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopyp. 207
Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructuresp. 217
Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?p. 231
Strained Layer Quantum Well Semiconductor Lasersp. 241
Subject Indexp. 251
List of Participantsp. 255
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780792323976
ISBN-10: 0792323971
Series: NATO Science Series E:
Audience: General
Format: Hardcover
Language: English
Number Of Pages: 256
Published: 31st July 1993
Country of Publication: NL
Dimensions (cm): 23.39 x 15.6  x 1.6
Weight (kg): 0.56

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