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Semiconductor Device & Failure Analysis - Using   Photon Emmission Microscopy : Using Photon Emission Microscopy - Wai Kin Chim

Semiconductor Device & Failure Analysis - Using Photon Emmission Microscopy

Using Photon Emission Microscopy

Hardcover

Published: 22nd December 2000
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The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:<br> * Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.<br> * Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM<br> * Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.<br> Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.

"This reference details the principles of design, calibration, and use of photon emission microscopy (PEM) as a fault localization technique used for analyzing device reliability and failure." (SciTech Book News Vol. 25, No. 2 June 2001)

Preface.

Introduction.

Theory of Light Emission in Semiconductors.

Instrumentation Aspects of the Photon Emission Microscope.

Backside Photon Emission Microscopy.

Spectroscopic Photon Emission Microscopy.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing.

Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures.

Index.

ISBN: 9780471492405
ISBN-10: 047149240X
Series: Quality and Reliability Engineering
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 288
Published: 22nd December 2000
Publisher: John Wiley and Sons Ltd
Country of Publication: GB
Dimensions (cm): 23.27 x 16.03  x 2.01
Edition Number: 1