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Porous Silicon Science and Technology : NATO Asi Series - Jean-Claude Vial

Porous Silicon Science and Technology

NATO Asi Series

By: Jean-Claude Vial (Editor), Jacques Derrien (Editor)

Paperback ISBN: 9783540589365
Number Of Pages: 358

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The discovery of bright visible light emission from porous silicon has opened the door to various nanometer-sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and most prominent feature, their structures display properties similar to other highly divided materials (even non-semiconductors), which justifies a multidisciplinary approach. The book addresses graduate students, physicists and engineers who want to learn about optoelectronic devices based on porous silicon and on the electrochemistry of semiconductors, basic techniques, and the theoretical background.

Fundamental aspects of the semiconductor-solution interface
The silicon/electrolyte interface
Porous silicon: material processing, properties and applications
Luminescence of porous silicon after electrochemical oxidation
Mechanism for light emission from nanoscale silicon
Theory of silicon crystallites. Part II
Doping of a quantum dot and self-limiting effect in electrochemical etching
Electronic and optical properties of semiconductors quantum wells
What can be learned from time resolved measurements on porous silicon luminescence
Ion beam analysis of thin films. Applications to porous silicon
IR spectroscopy of porous silicon
Nano characterization of porous silicon by transmission electron microscopy
Electron paramagnetic resonance spectroscopy: Defect and structural analysis of solids
Raman scattering in silicon nanostructures
Scattering of X-rays
X-ray photoemission spectroscopy
Optoelectronic properties of porous silicon. The electroluminescent devices
Porous silicon luminescence under cathodic polarisation conditions
Interrelation between electrical properties and visible luminescence of porous silicon
Characteristics of porous n-type silicon obtained by photoelectrochemical etching
Porous Si: From single porous layers to porosity superlattices
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9783540589365
ISBN-10: 3540589368
Series: NATO Asi Series
Audience: General
Format: Paperback
Language: English
Number Of Pages: 358
Publisher: Springer-Verlag Berlin and Heidelberg Gmbh & Co. Kg
Country of Publication: DE
Dimensions (cm): 24.41 x 16.99  x 1.98
Weight (kg): 0.6