+612 9045 4394
 
CHECKOUT
Optoelectronic Devices : III Nitrides - Mohamed Henini

Optoelectronic Devices

III Nitrides

Hardcover Published: 17th December 2004
ISBN: 9780080444260
Number Of Pages: 592

Share This Book:

Hardcover

RRP $325.00
$240.40
26%
OFF
or 4 easy payments of $60.10 with Learn more
This title is not in stock at the Booktopia Warehouse and needs to be ordered from our supplier.
Click here to read more about delivery expectations.

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications.
The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage.
This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics.
Broad review of optoelectronic applications of III-V nitrides

Introduction
The rise of III-nitrides : an introduction
The evolution of nitride semiconductors
Technology of MOVPE production tools
MOCVD growth of group III nitrides for high-power, high-frequency applications
Growth of nitride quantum dots
AIN epitaxial layers for UV photonics
Properties of III - V nitrides substrates and homoepitaxial layers
III-nitride ultraviolet light emitting sources
III-nitride photoconductors
Quaternary InAlGaN-based UV LEDs
Design and fabrication of GaN high power rectifiers
GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices
Ferromagnetism in GaN and related materials
Phonons and electron - phonon interactions in III-nitride bulk and dimensionally confined semiconductors and their device implications
Phase separation and ordering in cubic ternary and quaternary nitride alloys
Electronic properties of intrinsic and heavily DOPED 3C-, nH-SiC (n=2, 4, 6) and III-N (III = B, Al, Ga, In)
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780080444260
ISBN-10: 0080444261
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 592
Published: 17th December 2004
Publisher: Elsevier Science & Technology
Country of Publication: GB
Dimensions (cm): 24.0 x 16.5  x 2.54
Weight (kg): 1.21