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Numerical Simulation of Submicron Semiconductor Devices : Electronic Materials & Devices Library - Kazutaka Tamizawa

Numerical Simulation of Submicron Semiconductor Devices

Electronic Materials & Devices Library

Hardcover Published: 19th December 1993
ISBN: 9780890066201
Number Of Pages: 356

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Describes the basic theory of carrier transport, develops numerical algorithms in FORTRAN used for transport problems or device simulations, and presents real-world examples.

Prefacep. xi
Introductionp. xiii
Semiconductor Fundamentalsp. 1
Electrons in a Crystal and Band Structurep. 1
Band Modelp. 5
Electron Dynamicsp. 9
Heterostructures and Heterojunctionsp. 10
Carrier Confinement in Heterostructuresp. 14
Lattice Vibrations (Phonons)p. 18
Summaryp. 21
To Probe Furtherp. 22
Problemsp. 22
Referencesp. 23
Carrier Scatteringp. 25
Quantum Mechanical Theory of Scatteringp. 25
Impurity Scatteringp. 33
Phonon Scatteringp. 40
Acoustic Phonon Scatteringp. 41
Non-polar Optical Phonon Scatteringp. 46
Polar Optical Phonon Scatteringp. 49
Carrier-Carrier Scatteringp. 55
Plasmon Excitationp. 56
Binary Carrier-Carrier Scatteringp. 60
Scattering Rates for Non-parabolic and Anisotropic Bandsp. 64
Scattering in a Quasi-Two-Dimensional Electron Gasp. 66
Acoustic and Non-polar Optical Phonon Scatteringsp. 66
Polar Optical Phonon Scatteringp. 70
Ionized Impurity Scatteringp. 72
Summaryp. 75
To Probe Furtherp. 75
Problemsp. 76
Referencesp. 76
Monte Carlo Transport Calculationp. 79
Single-Particle Monte Carlop. 79
Simulation of Carrier Motionp. 80
Drift Processp. 83
Scattering Processp. 84
Velocity Calculationp. 96
Ensemble Monte Carlo for Bulk Electronsp. 103
Ensemble Particle Motionp. 104
Velocity Overshootp. 107
Summaryp. 109
To Probe Furtherp. 113
Problemsp. 113
Referencesp. 114
Monte Carlo Device Simulationp. 115
Introductionp. 115
A Specific Device Model for Descriptionp. 116
Stability Criteria for Time Step and Mesh Sizep. 118
Particle Dynamics With Boundary Conditionsp. 120
Initial Conditionp. 121
Particle Dynamics With Boundary Conditionp. 123
Space-Charge Density and Potential Calculationp. 130
Charge Distributionp. 130
Finite Difference Scheme for Poisson Equationp. 133
Device Characteristicsp. 139
Device Simulationsp. 141
Submicron GaAs Diodep. 141
GaAs MESFETp. 146
AlGaAs HBTp. 150
Calculation of 2DEG Transportp. 156
Silicon MOSFETp. 159
Summaryp. 165
Problemsp. 165
Referencesp. 166
Selected Bibliography: Papers on Device Simulationsp. 168
Balance Equation Method for Device Simulationp. 171
Derivation of Basic Equationsp. 171
Balance Equation for Carrier Densityp. 172
Momentum Balance Equationp. 173
Energy Balance Equationp. 176
Balance Equations in Terms of n, v, and wp. 179
Non-parabolicity of Bandsp. 181
Ensemble Relaxation Rates and the Calculationp. 181
Balance Equation Model for Silicon and GaAsp. 186
Balance Equation Modeling for Siliconp. 186
Balance Equation Modeling for GaAsp. 189
Discretization of Balance Equationsp. 192
Explicit Methodp. 194
Implicit Methodp. 197
Device Simulation and Comparisonp. 201
AlGaAs HBTp. 202
Silicon MOSFETp. 213
Simplified Version of Equationsp. 217
Summaryp. 219
Problemsp. 220
Referencesp. 220
Selected Bibliography: Papers on Balance Equation Methodp. 221
Symbols, Constants, Parametersp. 223
List of Symbolsp. 223
Physical Constantsp. 225
Material Parametersp. 225
Quasi-Two-Dimensional Electrons in a Triangle Potential Well (Variational Parameter Method)p. 227
Quantum Theory of a Harmonic Oscillatorp. 231
Scattering Rates in Non-parabolic Bandsp. 235
Numerical Methodsp. 237
LU Decomposition Method for Tridiagonal Matrix Equationp. 237
Matrix Elements in Equation (5.110)p. 239
Referencesp. 241
List of Programsp. 243
Single-Particle Monte Carlo Program for Bulk GaAsp. 243
Ensemble Monte Carlo Program for Bulk Siliconp. 256
Monte Carlo Program for GaAs Diode (Part)p. 268
Ensemble Monte Carlo Program for 2DEGp. 281
Balance Equation Modeling for an Si Diodep. 296
Solutions to Problemsp. 315
Indexp. 335
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9780890066201
ISBN-10: 0890066205
Series: Electronic Materials & Devices Library
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 356
Published: 19th December 1993
Publisher: Artech House Publishers
Country of Publication: US
Dimensions (cm): 22.9 x 15.2  x 2.3
Weight (kg): 0.61

Earn 597 Qantas Points
on this Book