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New Data and Updates for I-VII, III-V and II-VI Compounds : Landolt-Boernstein: Numerical Data and Functional Relationships in Science and Technology - New Series - Fumihiro Matsukura

New Data and Updates for I-VII, III-V and II-VI Compounds

Landolt-Boernstein: Numerical Data and Functional Relationships in Science and Technology - New Series

By: Fumihiro Matsukura (Contribution by), Euzi Fernandes da Silva (Contribution by), Bernd Honerlage (Contribution by), Robert P. Devaty (Contribution by), Jurgen Gutowski (Contribution by)

Hardcover

Published: 29th May 2010
Ships: 7 to 10 business days
7 to 10 business days
RRP $16931.99
$11727.50
AgBr: heat capacity.- AgBr: thermal conductivity, thermal diffusivity.- AgBr: heat of sublimation.- AgBr: effective masses.- AgBr: lattice constants.- AgBr: lattice constants.- AgBr: mean square relative displacements.- AgBr: bulk moduli, elastic constants.- AgBr: compressibility, bulk modulus.- AgBr: phonon dispersion.- AgBr: Debye-Waller factor.- AgBr: elastic moduli.- AgBr: dielectric function.- AgIxBr1-x: electrical conductivity, thermoelectric power.- AgCl: heat capacity.- AgCl: heat of sublimation.- AgCl: thermal conductivity, thermal diffusivity.- AgCl: band structure, electron density of states.- AgCl: effective masses.- AgCl: energy gaps, density of states.- AgCl: lattice constants.- AgCl: lattice constants.- AgCl: phonon dispersion.- AgCl: bulk moduli, elastic constants.- AgCl: compressibility, bulk modulus.- AgCl: elastic moduli.- AgCl: Debye-Waller factor.- AgCl: dielectric function.- AgCl: impurity g-factors, hyperfine structure constants.- AgF: lattice constants.- AgF: heat of sublimation.- ?-AgI: bulk moduli.- ?-AgI: lattice constants.- ?-AgI: mean square relative displacements.- AgI: phase transitions, p-T phase diagram.- AgI: heat of sublimation.- AgI: lattice constants.- AgI: compressibility, bulk modulus.- AgI: phonon dispersion.- AgI: Debye-Waller factor.- AgI: elastic moduli, mode Gruneisen parameters.- ?-AgI: ion diffusion coefficient.- AlAs: dielectric constant, refractive index.- AlAs: direct and indirect energy gaps.- AlAs: effective mass parameters.- AlAs: electron density of states, energies at symmetry points.- AlAs: energy gaps.- AlGaxAs1-x: heat capacity.- AlGaxAs1-x: linear thermal expansion coefficient.- AlGaxAs1-x: thermal conductivity, thermal diffusivity.- AlxGa1-xAs: crossover composition energy at symmetry points.- AlxGa1-xAs: electron self energy, electron broadening parameter.- AlxGa1-xAs: lattice constant.- AlxGa1-xAs: elastic constants, Poisson ratio.- AlxGa1-xAs: refractive index, dielectric constant.- AlxGayIn1-x-yAs: bond length.- AlxGayIn1-x-yAs: energy gap.- AlxGayIn1-x-yAs: Raman spectra.- AlxGayIn1-x-yAs: hole mobility.- AlxGayIn1-x-yAs: photoluminescence linewidth.- AlxGa1-xAsySb1-y: internal strain parameter.- AlxGa1-xAsySb1-y: thermal conductivity.- AlxGa1-xAsySb1-y: band structure.- AlxGa1-xAsySb1-y: effective mass parameters.- AlxGa1-xAsySb1-y: energy gaps.- AlxGa1-xAsySb1-y: elastic moduli.- AlxGa1-xAsySb1-y: dielectric constant.- AlxGa1-xAsySb1-y: photoluminescence, absorption coefficient.- AlxIn1-xAs: critical point energies.- AlxIn1-xAs: Raman data.- Al1-xMnxAs: crystal structure, lattice parameter.- Al1-xMnxAs: resistance.- Al1-xMnxAs: magnetic phases.- AlAsxSb1-x: thermal conductivity.- AlxGayIn1-x-yP: bond length.- AlxGa1-xP: lattice parameters.- AlxGa1-xP: critical point energies, interband transition energies.- AlxGa1-xP: electron self energy.- AlxGa1-xP: exciton energies.- AlxGa1-xP: bound exciton data.- AlxGa1-xP: photoluminescence spectra.- AlxGa1-xPySb1-y: elastic moduli.- AlxGa1-xPySb1-y: internal strain parameter.- AlxIn1-xPySb1-y: internal strain parameter.- AlxIn1-xPySb1-y: elastic moduli.- BxGa1-xAs: energy gaps, energy at symmetry points.- BxGa1-xAs: lattice parameter.- BxGa1-x-yInyAs: critical point energies.- BxGa1-x-yInyAs: electron effective mass.- BxGa1-x-yInyAs: energy gaps.- GaAs1-xBix: direct energy gap, intraband transition energies.- GaAs1-xBix: energy gaps, critical point energies.- GaAs1-xBix: spin orbit splitting energy.- GaAs1-xBix: spin orbit splitting energy.- BxIn1-xAs: lattice parameter.- Ga1-xCrxAs: crystal structure, lattice parameter.- Ga1-xCrxAs: conductivity, carrier concentration.- Ga1-xCrxAs: Curie temperature, magnetic circular dichroism.- Ga1-xFexAs: crystal structure, lattice parameter.- Ga1-xFexAs: conductivity, magnetoresistance.- Ga1-xFexAs: magnetization.- GaAs: heat capacity.- GaAs: spin-Hall conductivity, transversal spin drift velocity.- GaAs: phonon density of states.- GaAs: Debye temperatures.- GaAs: spin transport data, spin lifetime, spin drift velocity.- GaAs: photoemission data.- GaAs: radiative recombination coefficient.- GaxIn1-xAs: effective Lande g factors.- GaxIn1-xAs: electron effective mass.- GaxIn1-xAs: energy gaps.- GaxIn1-xAs: parameters of k*p models.- GaxIn1-xAs: critical point energies.- GaxIn1-xAs: phonon wave numbers.- GaxIn1-xAs: carrier lifetime.- GaxIn1-xAs: spin transport data.- GaxIn1-xAs: impact ionization rate.- GaxIn1-xAs: dielectric function.- GaxIn1-xAs: Auger recombination coefficient and lifetime.- GaxIn1-xAs: radiative recombination coefficients.- GaxIn1-xAsyP1-y: energy gaps.- GaxIn1-xAsyP1-y: energy gaps.- GaxIn1-xAsyP1-y: Auger recombination coefficient.- GaxIn1-xAsyP1-y: radiative recombination coefficients.- GaxIn1-xPySbzAs1-y-z: band structure, density of states.- GaxIn1-xPySbzAs1-y-z: energy gaps.- GaxIn1-xPySbzAs1-y-z: transverse effective charge, dielectric constants.- GaxIn1-xAsySb1-y: lattice constant.- GaxIn1-xAsySb1-y: thermal conductivity.- GaxIn1-xAsySb1-y: critical point energies.- GaxIn1-xAsySb1-y: energy gaps.- GaxIn1-xAsySb1-y: energy gap.- GaxIn1-xAsySb1-y: absorption coefficient.- GaxIn1-xAsySb1-y: absorption coefficient.- GaxIn1-xAsySb1-y: Auger recombination coefficient, nonradiative lifetime.- GaxIn1-xAsySb1-y: dielectric constant.- GaxIn1-xAsySb1-y: dielectric constant.- GaxIn1-xAsySb1-y: refractive index.- Ga1-xMnxAs: crystal structure, lattice parameter.- Ga1-xMnxAs: band structure, direct energy gap.- Ga1-xMnxAs: spin polarization.- Ga1-xMnxAs: conductivity, resistivity, magnetoresistance, Hall effect.- Ga1-xMnxAs: exchange integrals, Curie temperature, magnetic anisotropy.- Ga1-xMnxAs: magnetic circular dichroism, Verdet constant.- GaAs1-xSbx: direct energy gap, spin orbit splitting energy.- GaAsxSb1-x: energy gaps.- GaAsxSb1-x: photoluminescence.- GaAsxSb1-x: refractive index.- InAs: total energies, phase diagram.- InAs: band structure.- InAs: critical point energies.- InAs: Dresselhaus spin splitting parameter.- InAs: spin orbit splitting energies.- InAs: effective mass parameters.- InAs: energies at symmetry points.- InAs: effective Lande g factors.- InAs: interband transition energies.- InAs: energy gap.- InAs: phonon frequencies.- InAs: mobility.- InAs: electron spin lifetime.- InAs: drift velocity.- InAs: dielectric constant.- InAs: absorption coefficient, reflectivity.- InAs: extinction coefficient, refractive index.- InAs: higher order optical susceptibilities.- In1-xMnxAs: crystal structure, lattice parameter.- In1-xMnxAs: direct gap, effective masses.- In1-xMnxAs: conductivity, magnetoresistance, Hall resistivity.- In1-xMnxAs: carrier concentration, mobility.- In1-xMnxAs: magnetic circular dichroism.- In1-xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy-->In1-xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy.- InAsxSb1-x: critical point energies, broadening parameters.- InAsxSb1-x: energy gaps.- InxAs1-xSb: transverse effective charge.- InAsxSb1-x: sound velocities.- InAsxSb1-x: elastic moduli.- InAsxSb1-x: dielectric constant.- InBixSb1-x: transverse effective charge.- CuCl1-xBrx: phonon wavenumbers.- CuCl1-xBrx: electron mobility, drift velocity.- CuBr: p-T phase diagram, transition pressure.- CuBr: interionic distance.- CuBr: heat of sublimation.- ?-CuBr: biexciton and trion data.- ?-CuBr: deformation potentials.- ?-CuBr: energy gaps, exciton energies in dependence on temperature.- CuBr: elastic moduli, effective charges.- CuBr: Gruneisen parameters.- CuBr: phonon wavenumbers, damping constants, Gruneisen parameters.- CuBr: phonon dispersion curves, phonon density of states.- CuBr: lattice constants.- ?-CuBr: mean square relative displacements.- CuBr: bulk modulus.- ?-CuBr: ion transport properties.- ?-CuBr: electron mobility, drift velocity.- ?-CuBr: dielectric constants.- Hg1-x-y-zCdxMnyZnzTe: energy gap.- Hg1-x-y-zCdxMnyZnzTe: micro hardness.- Hg1-x-y-zCdxMnyZnzTe: intrinsic carrier concentration, conductivity, Hall coefficient, mobility.- Hg1-x-y-zCdxMnyZnzTe: activation energy.- Hg1-xCdxTe: activation energy.- Hg1-xCdxTe: mobility, carrier concentration.- Hg1-xCdxTe: free-carrier absorption.- Hg1-xCdxTe: luminescence, reflectance, absorption, and refractive index.- Hg1-xCdxTe: reflectance.- Hg1-xCdxTe: two-photon absorption constant.- CdO: band structure, density of states.- CdO: energy gaps.- CdO: mean inner potential.- CdO: photoconductivity, resistivity.- Zn1-xCdxO: energy gaps, dependence on temperature.- Zn1-xCdxO: resistivity.- CdS: phase transition, transition pressure.- CdS: exciton energies, exciton binding energies.- CdS: bound excitons.- CdS: defect formation energies.- CdS: resistivity.- CdS: conductivity, mobility.- CdSe: phase transition, transition pressure.- CdSe: energy gaps.- CdSe: dielectric constants.- CdSe: higher order optical susceptibilities.- Sn1-xCdxTe: hardness.- ZnxCd1-xS: energy gaps.- Cd1-xZnxS: resistivity.- CdTe: density of states.- CdTe: energy gaps, temperature dependence.- CdTe: band structure.- CdTe: impurity complexes.- CdTe: impurity complexes.- CdTe: ionization energies.- CdTe: ionization energies.- CdTe: bound excitons.- CdTe: donor-acceptor pairs, free-to-bound transitions.- CdTe: emission energies.- CdTe: bound excitons.- CdTe: Hall mobility.- CdTe: mobility.- CdTe: resistivity.- CdTe: conductivity, resistivity.- CdTe: dielectric constants.- CdTe: higher order optical susceptibilities.- Cd1-xZnxTe: enthalpy.- Cd1-xZnxTe: energy gaps.- Cd1-xZnxTe: donor acceptor pairs.- Cd1-xZnxTe: ionization energies.- Cd1-xZnxTe: resistivity, mobilities, Hall coefficient.- ?-CuCl: exciton energies.- ?-CuCl: phonon wavenumbers.- CuCl: mean square relative displacements.- CuCl: phonon dispersion.- CuCl: elastic moduli.- SiC: valence band offsets.- SiC: spontaneous polarization.- SiC: absorption coefficient.- SiC: Auger recombination coefficient.- SiC: exciton gap.- ?-SiC: nonlinear optical coefficients.- SiC: refractive index.- CuF: heat of sublimation.- CuF: lattice constants.- CuI: phase transitions, p-T phase diagram.- CuI: heat of sublimation.- ?-CuI: biexciton and trion data.- ?-CuI: exciton energies.- CuI: force constants, elastic moduli, effective charges.- CuI: bulk modulus.- CuI: phonon dispersion.- ?-CuI: phonon wavenumbers.- CuI: lattice parameters.- CuI: mode Gruneisen parameters.- ?-CuI: mean square displacement.- CuI: ion diffusion coefficient.- ?-CuI: electron mobility, drift velocity.- GaxIn1-xP: elastic moduli.- GaxIn1-xP: transverse effective charge.- Ga1-xMnxSb: crystal structure.- Ga1-xMnxSb: conductivity, magnetoresistance, Hall resistivity.- Ga1-xMnxSb: Curie temperature, magnetic anisotropy.- GaP: phonon density of states.- Hg1-xMnxTe: energy gaps, effective masses.- Hg1-xMnxTe: ionization energies.- Hg1-xMnxTe: mobility, conductivity and Hall coefficient.- Hg1-xMnxTe: absorption, reflectivity.- HgS: point/space groups.- HgS: band structure, energy gaps.- HgS: energy gaps.- HgS: conductivity.- HgS: resistivity.- HgSe: band structure, electron density of states.- HgSe: transmittance.- HgTe: lattice parameters.- HgTe: point/space groups.- HgTe: band structure, density of states.- HgTe: conductivity, Hall coefficient.- HgTe: resisitivity, carrier mobility.- HgTe: Seebeck coefficient.- Hg1-xZnxTe: phonon frequencies.- Hg1-xZnxTe: reflectance.- In1-xMnxSb: crystal structure, lattice parameter.- In1-xMnxSb: spin polarization.- In1-xMnxSb: conductivity, Hall resistivity.- In1-xMnxSb: magnetic phases, Curie temperature, magnetic anisotropy.- InPxSb1-x: energy gaps.- InPxSb1-x: effective charges.- InPxSb1-x: phonon frequencies.- InPxSb1-x: dielectric constant.- InSb: interband transition energies.- InSb: spin orbit splittings.- InSb: Dresselhaus spin splitting parameter.- InSb: effective Lande g factors.- InSb: effective mass parameters.- InSb: energies at symmetry points.- InSb: band structure.- InSb: critical point energies.- InSb: spin transport data.- InSb: absorption coefficient, reflectivity.- InSb: Auger lifetime.- InSb: dielectric constant.- InSb: extinction coefficient, refractive index.- InSb: higher order optical susceptibilities.- MgyZn1-yTe1-xSex: energy gaps.- Zn1-xMgxTe: energy gaps, bowing parameter.- Zn1-xMgxSe: absorption.- ZnSe1-xOx: exciton energies, exciton binding energies.- ZnSxO1-x: energy gaps, bowing parameter.- ZnO: mean inner potential.- ZnO: dielectric constants.- ZnSe: phase transition, transition pressure.- ZnSe: spin-orbit splitting.- ZnSe: deformation potentials.- ZnSe: Compton profiles.- ZnSe: Compton scattering profiles.- ZnSe: bound exciton data.- ZnSe: bound excitons and electrons.- ZnSe: bound excitons.- ZnSe: deep impurities.- ZnSe: deep impurities, muonium data.- ZnSe: diffusion coefficient.- ZnSe: donor acceptor pairs.- ZnSe: donor-acceptor pairs, free-to-bound transitions.- ZnSe: ionization and excitation energies.- ZnSe: ionization and excitation energies.- ZnSe: Hall mobility.- ZnSe: conductivity.- ZnSe: dielectric constants.- ZnSxSe1-x: energy gaps, bowing parameter.- ZnSxSe1-x: refractive index, dielectric constants.- ZnS1-xTex: bound excitons.- ZnS: phase transition, transition pressure.- ZnS: spin-orbit splitting.- ZnS: deep impurities, muonium data.- ZnS: ionization energies.- ZnS: resistivity.- ZnS: dielectric constants.- ZnS: dielectric constants.- ZnS: dielectric constants.- ZnTe: spin-orbit splitting.- ZnTe: bound excitons.- ZnTe: donor-acceptor-pairs.- ZnTe: ionization energies.- ZnTe: ionization energies.- ZnTe: diffusion coefficient.- ZnTe: resistivity.- ZnTe: thermoelectric power.- ZnTe: refractive index, dielectric constants.

ISBN: 9783540921394
ISBN-10: 3540921397
Series: Landolt-Boernstein: Numerical Data and Functional Relationships in Science and Technology - New Series
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 484
Published: 29th May 2010
Publisher: Springer-Verlag Berlin and Heidelberg Gmbh & Co. Kg
Country of Publication: DE
Dimensions (cm): 27.0 x 19.3  x 3.0
Weight (kg): 1.28