NATO Science Series II

Mathematics, Physics and Chemistry

By: Evgeni Gusev (Editor)

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Paperback | 27 January 2006

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508 Pages

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23.5 x 15.88 x 3.18

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The goal of this NATO Advanced Research Workshop (ARW) entitled "Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices", which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

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High-K Technology
PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current; M. Niwa et al
Extremely High Density Capacitors with ALD High-k Dielectric Layers
Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks
Defects in High-K Dielectrics: Characterization
On the Characterization of Electronically Active Defects in High-k Gate Dielectrics
Inelastic Electron Tunnelling Spectroscopy (IETS) Study of High-k Dielectrics
Characterization and Modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements
Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping
Impact of High-k Properties on MOSFET Electrical Characteristics
High-K Processing and Defects
Structural Evolution and Point Defects in Metal Oxide-based High-k Gate Dielectrics
Disordered Structure and Density of Gap States in High-Permittivity Thin Solid Films
Interdiffusion Studies of High-k Gate Dielectric Stack Constituents
XPS/LEIS Studyof High-k Rare Earth (Lu, Yb)Oxides and Silicates on Si: The Effect of Annealing onMicrostructure Evolution
Transient Charging Effects and Its Implications to The Reliability of High-k Dielectrics
High-K Heory
Defect Energy Levels in High-k Gate Oxides
Defect-related Issues in High-k Dielectrics
Studying The Effects of Nitrogen and Hafnium Incorporation into The SiO2/Si(100) Interface with Replica-exchange Molecular Dynamics and Density-Functional-Theory Calculations
Electrically Active Defects
Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100)Si by Electron Spin Resonance: Interfaces and N Incorporation
Mechanism of Charge Trapping Reduction in Scaled High-k Gate Stacks
Electrically Active Interface and Bulk Semiconductor Defects in High-k / Germanium Structures
Defect and Composition Analysis of As-deposited and Nitrided (100)Si/ SiO2/ Hf1-xSixO2 Stacks by Electron Paramagnetic Resonance and Ion Beam Analysis
Defects at The High-k /Semiconductor Interfaces Investigated By Spin Dependent Spectroscopies
Fixed Oxide Charge in Ru-based Chemical Vapour Deposited High-k Gate Stacks
Electrical Defects in Atomic Layer Deposited HfO2 Films on Silicon: Influence of Precursor Chemistries and Substrate Treatment
The Effects of Radiation and Charge Trapping on The Reliability of Alternative Gate Dielectrics
Can LEIS Spectra Contain Information on Surface Electronic Structure of High-k Dielectrics
Low Substrate Damage High-k Removal After Gate Patterning
Monitoring of Fermi Level Variations at Metal/High-k Interfaces with in situ X-ray Photoelectron Spectroscopy
Interfaces
Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon
Interface Formation During Epitaxial Growth of Binary Metal Oxides on Silicon
Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces
Dielectric and Infrared Properties of Ultrathin SiO2 Layers on Si (100)
The (1 0 0) Surface of Semiconductor Silicon (in Practical Conditions)
Preparation, Evolution, Passivation
Processing, Characterization and Devices
Correlation Between Defects, Leakage Current
Table of Contents provided by Publisher. All Rights Reserved.

NATO Science Series II

Mathematics, Physics and Chemistry

At a Glance

Paperback

Shipping

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