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Monolithic Microwave Integrated Circuits Design : Gallium Arsenide FETS and HEMTS - Peter H. Ladbrooke

Monolithic Microwave Integrated Circuits Design

Gallium Arsenide FETS and HEMTS

Hardcover

Published: 19th March 1989
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Detailed information on the principles of integrated design required for successful fabrication of MMIC chips at a reasonable cost. It emphasizes CAD techniques and the effects of material variation. The device modelling techniques presented demonstrate the simulation of overall MMIC chip behavior a

Forewordp. xi
Acknowledgmentsp. xiii
Notes on nomenclature, acronyms and useful datap. xv
List of symbolsp. xvii
Introductionp. 1
Statement of the problemp. 1
Design approachesp. 2
A simple examplep. 4
Yieldp. 7
The role of device physicsp. 8
MMIC types and chip functionsp. 11
Scale of IC fabricationp. 11
Applicationsp. 12
Civilp. 12
Militaryp. 14
Chip functionsp. 15
Example MMICsp. 17
Overview of passive elementsp. 29
Introductionp. 29
Microstriplinep. 30
Inductorsp. 34
Capacitorsp. 41
Resistorsp. 47
The Lange couplerp. 49
Other componentsp. 50
Final remarksp. 52
PIN and Schottky diodesp. 55
Introductionp. 55
Schottky diodesp. 56
PIN diodesp. 63
MMIC uses of PIN and Schottky diodesp. 67
Elementary FET principlesp. 69
Introductionp. 69
Review of Si JFET operationp. 70
Current saturation in the GaAs MESFETp. 77
Mechanism of current saturation--summaryp. 82
Essential enhancementsp. 83
Si JFETp. 83
GaAs MESFETp. 84
Equivalent circuit of the GaAs MESFETp. 85
Concluding remarksp. 87
MESFETsp. 91
Introductionp. 91
Brief outline of structurep. 91
Equivalent circuit--physical basisp. 95
Signal delayp. 95
Charge storagep. 99
Current modulationp. 109
Transconductance delayp. 110
Intrinsic equivalent circuitp. 112
Configurationp. 112
Voltage dependence of the space-charge layer extension, Xp. 116
Gate strip inductance, [script l][subscript g]p. 121
Channel, or intrinsic, resistance, R[subscript i]p. 121
Channel current, I[subscript CH]p. 121
Intrinsic transconductance, g[subscript m0]p. 122
Gate-channel capacitance, C[subscript gc]p. 123
Gate-drain capacitance, C[subscript gd]p. 123
Transconductance delay, [tau][subscript gm]p. 124
Implications for FET design and usagep. 124
Output conductance and other microwave effects of substrate currentp. 125
Effect of surface charge, non-uniform doping and gate recess depthp. 135
Series parasitic resistances R[subscript s] and R[subscript d] and effect on equivalent circuitp. 138
Source resistance, R[subscript s]p. 139
Drain resistances, R[subscript D] and R[subscript d]p. 142
Gate resistancep. 145
Geometric capacitancep. 146
Via-hole inductancep. 155
GaAs FET noisep. 156
Power MMICsp. 163
High electron mobility transistorsp. 189
Introductionp. 189
Energy band line-upp. 190
Physical basis and structurep. 192
Practical HEMT structuresp. 196
Principal equivalent circuit elementsp. 198
HEMT noisep. 201
Prospects for HEMT integrationp. 202
Reverse modeling GaAs MESFETs and HEMTsp. 205
Introductionp. 205
Reverse modeling for gate lengthp. 205
Errors in eqns (8.2) and (8.6)p. 211
Extension to HEMTsp. 211
General commentsp. 215
Reverse modeling for channel dopingp. 218
Conclusionp. 219
Design limitsp. 221
Introductionp. 221
Limits to small-signal behaviorp. 222
Gain, frequency and voltage, and gate lengthp. 222
Effect of gatewidth, Z[subscript G]p. 225
Input and output reflection coefficientp. 232
Maximum Tunable Gain (MTG), MAG, MSG and MUGp. 242
Limits to large-signal (power) behaviorp. 248
FETs in amplifiersp. 259
Introductionp. 259
Amplifier topologies and design principlesp. 261
Reactively matched amplifiersp. 263
Design of a two-element matching or gain slope compensation networkp. 268
Lossy matched amplifiersp. 277
Feedback amplifiersp. 279
Distributed amplifiersp. 287
The matrix amplifierp. 300
Balanced amplifiersp. 303
First trial device synthesisp. 305
FET synthesis by reverse modelingp. 310
FET synthesis for distributed power amplifiersp. 312
Power-impedance considerationsp. 313
Frequency considerationsp. 315
FET synthesis--examplep. 316
Final remarksp. 321
Computer-aided designp. 325
Introductionp. 325
Sensitivity analysis--basisp. 327
Application of the Monte Carlo method to yield forecastingp. 337
Uses of yield forecastingp. 343
FET centeringp. 344
Longer-term developmentsp. 346
Future developmentsp. 357
Indexp. 365
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9780890063149
ISBN-10: 0890063141
Series: Artech House Microwave Library
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 396
Published: 19th March 1989
Publisher: Artech House Publishers
Country of Publication: US
Dimensions (cm): 22.9 x 15.2  x 2.5
Weight (kg): 0.75