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Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors : Microwave Library - J.Michael Golio

Microwave Metal Semiconductor Field Effect Transistors and High Electron Mobility Transistors

Microwave Library

By: J.Michael Golio (Editor)

Hardcover

Published: 19th February 1991
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This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed. This book is designed for microwave device and circuit design engineers, GaAs device and MMIC design engineers, MMIC and Hybrid circuit design engineers, and researchers in large signal device modelling.

Prefacep. ix
Basic Operationp. 1
Materials Propertiesp. 2
Energy Bandsp. 2
Doping and Carrier Concentrationp. 3
Carrier Transport and Conductivityp. 6
Deep Levelsp. 13
Breakdown and Tunnelingp. 15
Contact Propertiesp. 17
Ohmic Contactsp. 17
The p-n Junctionsp. 19
Schottky Barrier Junctionsp. 23
Heterostructuresp. 24
MESFET Descriptionp. 27
Current-Voltage Characteristicsp. 30
Transconductance and Output Resistancep. 34
Capacitance-Voltage Characteristicsp. 39
Second-Order Effectsp. 44
Output Resistance as a Function of Frequencyp. 45
Transconductance as a Function of Frequencyp. 49
Subthreshold Effectsp. 50
Optical Effectsp. 53
HEMT Descriptionp. 58
Current-Voltage Characteristicsp. 61
Transconductance and Output Resistancep. 64
Capacitance-Voltage Characteristicsp. 68
Device Modelsp. 73
Small-Signal Modelsp. 75
Physical Significance of Equivalent Circuit Element Valuesp. 75
Parasitic Inductances L[subscript s], L[subscript d], and L[subscript g]p. 77
Parasitic Resistances R[subscript s], R[subscript d], and R[subscript g]p. 77
Capacitances C[subscript gs], C[subscript gd], and C[subscript ds]p. 77
Transconductance g[subscript m]p. 78
Output Conductance g[subscript ds]p. 78
Transconductance Delayp. 78
Charging Resistancep. 79
Scaling Rules for Element Valuesp. 79
Physically Based Modelingp. 80
Direct Current Analysisp. 84
Transconductance and Output Conductancep. 87
Capacitances C[subscript gs], C[subscript gd], and C[subscript ds]p. 88
Pucel Model Resultsp. 89
Modeling Frequency-Dependent Conductancesp. 90
Noise Modelsp. 92
Empirical Noise Modelsp. 97
Physical Modelsp. 118
Large-Signal Modelsp. 128
Empirical MESFET/HEMT Modelsp. 128
Curtice Modelp. 130
Statz (Raytheon) Modelp. 133
Materka-Kacprzak Modelp. 138
TriQuint's Own Model (TOM)p. 139
Advanced Curtice Model (Meta-Software)p. 140
Curtice-Ettenberg Modelp. 141
Procedure for Developing HEMT Modelsp. 142
HEMT Model (Curtice)p. 143
HEMT Materka-Kacprzak Modelp. 146
HEMT Advanced Curtice Modelp. 147
MESFET/HEMT Model Comparisonsp. 147
Physically Based Modelsp. 152
Physically Based MESFET Modelp. 152
Physically Based HEMT Modelp. 162
Characterizationp. 173
Direct Current Measurementsp. 174
Conventional Current-Voltage Measurementsp. 174
Forward-Bias Gate Measurementsp. 179
Radio-Frequency Measurementsp. 183
Microwave S-Parameter Measurementsp. 183
Pulsed Measurementsp. 186
Low Frequency Dispersion Measurementsp. 188
Large-Signal Measurementsp. 189
Load-Pull Measurementsp. 189
Two-Tone Harmonic Content Measurementsp. 194
Noise Characterizationp. 197
Spectral Density Measurementsp. 197
Fully Automated Minimum Noise Figure Measurementsp. 200
Parameter Extractionp. 207
Direct Current Data Extractionp. 207
Current-Voltage Behaviorp. 208
Parasitic Resistancesp. 211
Rectifying Contact Propertiesp. 214
Gate-Drain Breakdownp. 215
Extraction of Small-Signal Equivalent Circuitsp. 216
Conventional Optimization Techniquesp. 216
Direct Extraction of Intrinsic Elementsp. 219
Capacitance Extractionp. 221
Extraction of g[subscript ds] and g[subscript m]p. 222
Extraction of [tau] and R[subscript i]p. 223
Comparison of Measured and Modeled S-Parameter Datap. 227
Parasitic Inductance Extractionp. 229
Extraction of Parasitic Resistances from S-Parametersp. 232
Element Extraction at Multiple Bias Pointsp. 236
Large-Signal Extractionp. 240
Nonlinear Unconstrained Optimizationp. 240
Fundamentals of Unconstrained Optimizationp. 241
Newton Methodsp. 246
Random Optimization Techniquesp. 249
A Large-Signal Parameter Extraction Methodologyp. 252
Noise Model Extractionp. 273
Direct Minimum Noise Figure Measurementsp. 273
Equivalent Circuit Elements with Noise Spectral Densityp. 275
Applications and Limitationsp. 279
Applicationsp. 280
Low Noise and Small-Signal Amplifiersp. 280
Power Amplifiersp. 283
Oscillatorsp. 285
Mixersp. 288
Attenuatorsp. 291
Figures of Meritp. 294
Gain-Bandwidth Productp. 295
Maximum Frequency of Oscillationp. 298
Maximum Stable Gainp. 301
Maximum Gain Efficiencyp. 303
Minimum Noise Figure and Associated Gainp. 304
MESFET Limitationsp. 304
MESFET Scaling Rules and Physical Limitsp. 305
Transconductance and Gate-Source Capacitancep. 314
Maximum Frequency of Oscillation and Gain-Bandwidth Productp. 316
Noise Figure Limitsp. 319
Output Power Limitsp. 320
HEMT Limitationsp. 326
HEMT Scaling Rules and Physical Limitsp. 326
Transconductance and Gate-Source Capacitancep. 330
Maximum Frequency of Oscillation and Gain-Bandwidth Productp. 331
Noise Figure Limitsp. 332
Output Power Limitsp. 334
List of Symbolsp. 343
Indexp. 347
The Authorsp. 351
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9780890064269
ISBN-10: 0890064261
Series: Microwave Library
Audience: General
Format: Hardcover
Language: English
Number Of Pages: 368
Published: 19th February 1991
Publisher: Artech House Publishers
Country of Publication: US
Dimensions (cm): 22.9 x 15.2  x 2.3
Weight (kg): 0.71