This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.
Historical Perspective (H. Hughes).
Electron-Hole Generation, Transport, and Trapping in SiO2 (F.McLean, et al.).
Radiation-Induced Interface Traps (P. Winokur).
Radiation Effects on MOS Devices and Circuits (P.Dressendorfer).
Radiation-Hardening Technology (P. Dressendorfer).
Process-Induced Radiation Effects (T. Ma).
Source Considerations and Testing Techniques (K. Kerris).
Transient-Ionization and Single-Event Phenomena (S. Kerns).
Number Of Pages: 608
Published: 18th April 1989
Country of Publication: US
Dimensions (cm): 24.44 x 16.71
Weight (kg): 0.95
Edition Number: 1
Edition Type: Annotated