Ionizing Radiation Effects in MOS Devices and Circuits

By: T. P. Ma (Editor), Paul V. Dressendorfer (Editor)

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Hardcover | 4 April 1989 | Edition Number 1

At a Glance

Hardcover
608 Pages

Edition Type
Annotated

Dimensions(cm)
24.5 x 16.9 x 3.35

Hardcover

RRP $681.95

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This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.

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