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High Electron Mobility Transistors and Heterojunction Bipolar Transistors : Devices, Fabrication and Circuits - Fazal Ali

High Electron Mobility Transistors and Heterojunction Bipolar Transistors

Devices, Fabrication and Circuits

By: Fazal Ali (Editor), Aditya Gupta (Editor), Inder Bahl (Editor)

Hardcover Published: 19th December 1991
ISBN: 9780890064016
Number Of Pages: 392

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Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs. The book discusses the important aspects of device physics and analytical models device fabrication technology, aspects of physics and growth technology of heterojunctions and application of resonant tunnelling to field-effect and bipolar transistors.

Prefacep. xi
HEMTs and HBTs: Introduction and Overviewp. 1
Introductionp. 1
High Electron Mobility Transistors (HEMTs)p. 3
Heterojunction Bipolar Transistors (HBTs)p. 5
Summaryp. 8
HEMT Device Physics and Modelsp. 11
Introductionp. 11
Carrier Transport in the HEMT Structurep. 13
Band Diagram and 2-DEG in AlGaAs/GaAs Systemsp. 14
2-DEG Carrier Mobility and Saturation Velocityp. 18
2-DEG Charge-Control by Schottky Barrier Gatep. 22
Ohmic Contacts and Series Resistancesp. 26
The Charge-Control Modelp. 29
dc and Small-Signal Characteristicsp. 29
Temperature Stability of Device Operationp. 36
Low-Frequency (LF) Equivalent Network Modelp. 39
The Unity-Current-Gain Frequencyp. 44
Low-Frequency 1/f and g-r Noise Sourcesp. 47
High-Frequency (HF) Limitationsp. 51
HF Equivalent Network for the Intrinsic HEMTp. 52
Determination of Equivalent Network Parametersp. 57
Power Gain and Stabilityp. 61
HF Noise Sources and Performance of HEMTsp. 63
HEMT Devices and Circuit Applicationsp. 77
Introductionp. 77
GaAs-Based Conventional HEMTp. 77
Material Considerationsp. 79
Device Fabricationp. 84
dc and RF Performancep. 91
Outlookp. 99
GaAs-Based Pseudomorphic HEMTp. 103
Material Structurep. 103
Applications of Pseudomorphic HEMTsp. 111
InP-Based Pseudomorphic HEMTp. 123
Introductionp. 123
Material Properties and Growthp. 124
Device Fabrication and Performancep. 134
Circuit Performancep. 143
HEMT Analog Circuit Applicationsp. 148
Introductionp. 148
HEMT Low-Noise Amplifiersp. 148
HEMT Wideband Amplifiersp. 150
HEMT Power Amplifiersp. 159
HEMT Control Circuitsp. 163
HEMT Mixers and Convertersp. 168
HEMT Oscillatorsp. 174
HEMT Frequency Doublersp. 175
Device Testingp. 177
Conclusionp. 182
HEMT Reliabilityp. 184
Reliability Testing of Low-Noise HEMTsp. 184
Reliability of Low-Noise HEMTsp. 186
Summaryp. 188
HBT Device Physics and Modelsp. 191
Introductionp. 191
Carrier Transport in HBT Structuresp. 195
Band Diagram and Current Transportp. 196
Recombination Processesp. 200
Drift, Diffusion, and Saturation Velocityp. 202
Ohmic Contacts and Series Resistancesp. 204
The Charge-Control Modelp. 206
dc and Small-Signal Characteristicsp. 207
LF Equivalent Network Model and Unity Current Gain Frequencyp. 212
The Switching Limitationsp. 215
Low-Frequency 1/f Noise and g-r Noise Sourcesp. 219
High Frequency Limitationsp. 224
HF Two-port Parameters and Equivalent Network Modelp. 224
Determination of the Equivalent Network Parametersp. 228
Power Gain and Stabilityp. 234
HF Noise Sources and Noise Figuresp. 236
Power Density Limitations of HBTsp. 241
Comparison of HBTs and HEMTsp. 246
HBT Devices and Circuit Applicationsp. 253
Introductionp. 253
Comparison with GaAs MESFET and HEMTp. 257
Comparison with Advanced Silicon Bipolar Transistorp. 258
Device Structurep. 260
Epitaxial Layer Growthp. 266
Emitter-up versus Collector-upp. 269
HBT Fabrication Technologyp. 270
Self-Aligned Contactsp. 274
Planar Structuresp. 276
Representative HBT IC Processp. 278
Technology Characterizationp. 281
HBT dc Characteristicsp. 282
HBT High-Frequency Characteristicsp. 286
Intrinsic HBT Linearityp. 287
Intrinsic HBT Nonlinearityp. 287
HBT Noise Performancep. 290
Schottky Diode Characteristicsp. 291
Thin-Film Resistorsp. 291
Metal-Insulator-Metal (MIM) Capacitorsp. 292
HBT Device Modeling and Simulationp. 292
Technology Qualificationp. 292
Power HBT Design Considerationsp. 301
Collector Designp. 301
Device Impedancep. 302
Size Considerationsp. 304
Thermal Considerationsp. 307
HBT Scalingp. 311
HBT Monolithic Amplifiersp. 316
HBT Complementary Amplifiersp. 318
Circuit Applicationsp. 322
Analog and Microwave Applicationsp. 328
Microwave Oscillatorsp. 333
Digital Applicationsp. 341
Analog-to-Digital Conversion Applicationsp. 345
Monolithically Combined Microwave-Digital Applicationsp. 352
InP-Based HBTp. 354
Reliabilityp. 361
Indexp. 371
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9780890064016
ISBN-10: 0890064016
Series: Microwave Library
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 392
Published: 19th December 1991
Publisher: Artech House Publishers
Country of Publication: US
Dimensions (cm): 22.9 x 15.2  x 2.5
Weight (kg): 0.74