Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices.
|Material Properties and Transport Physics||p. 23|
|Breakdown Voltage||p. 91|
|Schottky Rectifiers||p. 167|
|P-i-N Rectifiers||p. 203|
|Power MOSFETs||p. 279|
|Bipolar Junction Transistors||p. 507|
|Insulated Gate Bipolar Transistors||p. 737|
|Author's Biography||p. 1049|
|Table of Contents provided by Blackwell. All Rights Reserved.|
Number Of Pages: 1069
Published: 5th September 2008
Publisher: Springer-Verlag New York Inc.
Country of Publication: US
Dimensions (cm): 23.5 x 15.5 x 5.08
Weight (kg): 1.61