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Fundamentals of Power Semiconductor Devices - B. Jayant Baliga

Fundamentals of Power Semiconductor Devices

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Published: 5th September 2008
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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices.

Introductionp. 1
Material Properties and Transport Physicsp. 23
Breakdown Voltagep. 91
Schottky Rectifiersp. 167
P-i-N Rectifiersp. 203
Power MOSFETsp. 279
Bipolar Junction Transistorsp. 507
Thyristorsp. 625
Insulated Gate Bipolar Transistorsp. 737
Synopsisp. 1027
Author's Biographyp. 1049
Indexp. 1053
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780387473130
ISBN-10: 0387473130
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 1069
Published: 5th September 2008
Publisher: Springer-Verlag New York Inc.
Country of Publication: US
Dimensions (cm): 23.5 x 15.5  x 5.08
Weight (kg): 1.61