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Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices : NATO Science Partnership Subseries: 3 - Eric Garfunkel

Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices

NATO Science Partnership Subseries: 3

By: Eric Garfunkel (Editor), Evgeni Gusev (Editor), Alexander Vul' (Editor)

Paperback

Published: 31st March 1998
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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Preface
Introduction
Recent Advances in Experimental Studies of SiO2 Films on Si
Theory of the SiO2/Si and SiOxNy/Si Systems
Growth Mechanism, Processing, and Analysis of (Oxy)nitridation
Initial Oxidation and Surface Science Issues
Electrical Properties and Microscopic Models of Defects
Hydrogen/Deuterium Issues
New Substrates (SiC, SiGe) and SOI Technologies
Appendix
Authors Index
List of Workshop Participants
Table of Contents provided by Publisher. All Rights Reserved.

ISBN: 9780792350088
ISBN-10: 0792350081
Series: NATO Science Partnership Subseries: 3
Audience: General
Format: Paperback
Language: English
Number Of Pages: 507
Published: 31st March 1998
Publisher: Springer
Country of Publication: NL
Dimensions (cm): 23.39 x 15.6  x 2.67
Weight (kg): 0.72