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Field Effect in Semiconductor-Electrolyte Interfaces : Application to Investigations of Electronic Properties of Semiconductor Surfaces - Pavel P. Konorov

Field Effect in Semiconductor-Electrolyte Interfaces

Application to Investigations of Electronic Properties of Semiconductor Surfaces


Published: 1st July 2010
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This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention.

The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method.

This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.

"This book is very timely and interesting. There is a considerable need for a text providing information on the wet-dry interface. There is a large and growing interdisciplinary activity in nanotechnology and biotechnology, where the issue of interfacing traditional semiconductor electronics and ionic solutions is crucial, and electrodes may well be the single most important technological issue. This very useful book has the potential to become a standard reference."--Umberto Ravaioli, University of Illinois
"This book is unique in providing a very practical way to characterize the semiconductor surface. It will make a very significant contribution to the field."--Jong-Hyeok Jeon, Purdue University

Prefacep. vii
Abbreviationsp. xi
Introductionp. xiii
Semiconductor-Electrolyte Interface: Basic Notions and Definitionsp. 1
Semiconductor-Electrolyte Interface under Polarization: Voltage-Current Relationships (Polarization Characteristics)p. 7
Quasi-Equilibrium Field Effect in Semiconductor-Electrolyte Interfaces: Studies of Surface Statesp. 15
Quasi-Equilibrium FESEp. 15
Surface States Induced by Germanium Surface Oxidationp. 25
Surface States Arising on Germanium by Metal Adsorptionp. 27
Field Effect in Semiconductor-Electrolyte Interfaces on Nonequilibrium Depletion of Free Charge Carriers from Semiconductorp. 30
Application of Field Effect in Semiconductor-Electrolyte Interfaces for Studies of Surface Charge Layer Characteristics of Semiconductors and Semimetalsp. 37
Wide-Gap Semiconductorsp. 38
Narrow-Gap Semiconductorsp. 45
Zero-Gap Semiconductors and Semimetalsp. 70
FESE Technique as Applied to Studies of Surfaces of Metal Electrodes and HTSC Materialsp. 82
Processes of Spatial and Temporal Self-Organization in the Semiconductor-Electrolyte System and Their Manifestation in the Field Effectp. 88
Processes under Polarizationp. 88
Processes under Adsorptionp. 94
Quasi-periodic Oscillations in the Carbon Fiber-Electrolyte Systemp. 101
Belousov-Zhabotinsky Reactionp. 105
Size Quantization in the Semiconductor-Electrolyte Systemp. 109
Two-Dimensional Quantum Systems: Theoryp. 109
Two-Dimensional Size Quantization in Semiconductor-Electrolyte Interfaces and Its Manifestation in FESE Experimentsp. 114
One-Dimensional Quantum System: Theoryp. 119
Fabrication of Low-Dimensional Quantum Structures and Their Electronic Propertiesp. 121
Technique of FESE Method and Some Possibilities for Its Technological Applicationsp. 136
Technique of Quasi-Equilibrium FESE Methodp. 136
Application of FESE for Control of the Impurity Distribution in Semiconductorsp. 140
Method for Determining the Stoichiometric Composition of Solid Solutionsp. 141
FESE Technique for Investigation and Control of Biological Systemsp. 147
Conclusionp. 153
Bibliographyp. 155
Indexp. 175
Table of Contents provided by Ingram. All Rights Reserved.

ISBN: 9780691121765
ISBN-10: 0691121761
Audience: Tertiary; University or College
Format: Hardcover
Language: English
Number Of Pages: 192
Published: 1st July 2010
Publisher: Princeton University Press
Country of Publication: US
Dimensions (cm): 23.5 x 15.2  x 1.85
Weight (kg): 0.43