Ferroelectric Random Access Memories

Name: Ferroelectric Random Access Memories
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ISBN: 9783540407188

Fundamentals and Applications

By: Hiroshi Ishiwara (Editor), Masanori Okuyama (Editor), Yoshihiro Arimoto (Editor)

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Hardcover Published: 1st May 2004
ISBN: 9783540407188
Number Of Pages: 291

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In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

Ferroelectric Thin Films
Overview	p. 3
Introduction	p. 3
Materials for FeRAMs	p. 3
Conditions Desired for FeRAMs	p. 3
Typical Materials	p. 5
Doping Effects	p. 5
Grain Sizes	p. 6
Size Effects in Ferroelectric Capacitors	p. 7
Lateral Area	p. 7
Thickness Dependence	p. 7
Electrodes	p. 8
Dynamic Characteristics	p. 10
Domain Structure	p. 10
Polarization Switching Characteristics	p. 11
Frequency Dependence	p. 13
Retention	p. 14
References	p. 15
Novel Si-Substituted Ferroelectric Films	p. 17
Introduction	p. 17
The Crystallization Process	p. 18
The Properties of Bi₂SiO₅-Added Bi₄Ti₃O₁₂ Films	p. 20
The Formation of Ultra-Thin Films	p. 24
Annealing Effects in High-Pressure Oxygen	p. 25
Summary	p. 28
References	p. 29
Static and Dynamic Properties of Domains	p. 31
Introduction	p. 31
Domain Configuration	p. 32
Reversible and Irreversible Polarization Contributions	p. 35
Ferroelectric Switching	p. 37
Long-Term Effects	p. 41
Fatigue	p. 41
Retention Loss	p. 42
Imprint	p. 42
References	p. 44
Nanoscale Phenomena in Ferroelectric Thin Films	p. 47
Introduction	p. 47
Experimental Details	p. 48
Nanoscale Domain Imaging in Ferroelectric Thin Films	p. 50
Nanoscale Piezoelectric and Hysteresis Behavior	p. 61
Summary	p. 66
References	p. 67
Deposition and Characterization Methods
The Sputtering Technique	p. 71
Introduction	p. 71
A Sputtering System for Mass Production	p. 72
The Optimization of Sputtering Conditions	p. 75
The Ferroelectric Characteristics of Sputtered PZT Capacitors	p. 79
Sputtering of SBT Films and Hydrogen Barrier Layers	p. 80
Future Development Tasks	p. 82
References	p. 82
A Chemical Approach Using Liquid Sources Tailored to Bi-Based Layer-Structured Perovskite Thin Films	p. 85
Introduction	p. 85
SrBi2(Ta, Nb)₂O₉ and CaBi₂Ta₂O₉ Thin Films Deposited via Triple Alkoxides of Sr-Bi-Ta/Nb and Ca-Bi-Ta	p. 86
CaBi₃Ti₃O_12-x, CaBi₄Ti₄O₁₅, and Ca₂Bi₄Ti₅O₁₈ Thin Films Deposited via Mixtures of Ca-Bi and Bi-Ti Double Alkoxides	p. 90
References	p. 93
Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD	p. 95
Introduction	p. 95
Low-Temperature Deposition	p. 96
SBT Films	p. 96
PZT Films	p. 97
Novel Materials Research	p. 99
Solid Solution of SrBi₂(Ta_0.7Nb_0.3)₂O₉-Bi₃TaTiO₉ [(1 - x)SBT_-xBTT]	p. 99
(Bi,Ln)₄(Ti,V)₃O₁₂	p. 100
Summary	p. 101
References	p. 102
Materials Integration Strategies	p. 105
Introduction	p. 105
An Experimental Method for the Synthesis and Characterization of Ferroelectric Capacitor Layers	p. 108
The Magnetron-Based Synthesis and Characterization of Ti-Al Layers and LSCO/Ti-Al Heterostructures	p. 109
Studies of Ti-Al and LSCO Film Growth and Oxidation Processes	p. 113
Microstructure-Deposition Environment Relationships for Ti-Al Layers	p. 114
Studies of Ti-Al/LSCO Heterostructured Layer Growth and Oxidation Processes via Complementary in situ Analytical Techniques	p. 114
Electrical Characterization of Ferroelectric Capacitors with a Ti-Al Diffusion Barrier/Electrode Layer	p. 118
Summary	p. 120
References	p. 121
Characterization by Scanning Nonlinear Dielectric Microscopy	p. 123
Introduction	p. 123
ThePrinciplesandTheoryofSNDM	p. 124
Nonlinear Dielectric Imaging with Sub-Nanometer Resolution	p. 124
A Comparison between SNDM Imaging and Piezo-Response Imaging	p. 128
Higher-Order Nonlinear Dielectric Microscopy	p. 129
The Theory of Higher-Order Nonlinear DielectricMicroscopy	p. 129
Experimental Details of Higher-Order NonlinearDielectricMicroscopy	p. 130
Three-Dimensional Measurement Techniques	p. 133
The Principle and the Measurement System	p. 133
Experimental Results	p. 134
References	p. 135
The Fabrication Process and Circuit Design
The Current Status of FeRAM	p. 139
Introduction	p. 139
The High-Density FeRAM Roadmap	p. 141
The Current Status of PZT Capacitor Materials	p. 145
Summary	p. 147
References	p. 148
Operation Principle and Circuit Design Issues	p. 149
Introduction	p. 149
The Ferroelectric Capacitor	p. 151
TheHysteresisLoopCharacteristic	p. 153
Pulse-BasedCharacteristics	p. 154
The Ferroelectric Memory Cell: Read and Write Operations	p. 155
Sensing Schemes	p. 158
Ferroelectric Memory Architectures	p. 159
The Wordline-Parallel Plateline (WL//PL)	p. 159
The Bitline-Parallel Plateline (BL//PL)	p. 160
The Segmented Plateline (Segmented PL)	p. 161
Summary	p. 161
References	p. 162
High-Density Integration	p. 165
Introduction	p. 165
Key Technologies for High-Density FeRAM with a Small Cell Size Factor	p. 168
Reliable Ferroelectric Capacitor Technology	p. 168
Vertical Shape Capacitor Etching Technology with Low Etching Damage	p. 169
Plug Technology	p. 170
Encapsulated Hydrogen Barrier Technology	p. 171
Novel Integration Technology	p. 172
Sub-10 F² Future FeRAM Technology	p. 173
Summary	p. 175
References	p. 175
Testing and Reliability	p. 177
LeakageCurrent	p. 177
Electrical Breakdown	p. 178
Hysteresis Measurement	p. 181
Ferroelectric Fatigue	p. 183
Pulse Polarization Measurement	p. 184
Retention	p. 185
Imprint	p. 188
References	p. 192
Advanced-Type Memories
Chain FeRAMs	p. 197
Introduction	p. 197
Conventional FeRAM	p. 198
The Concept of Chain FeRAM	p. 199
TheBasicStructure	p. 199
Two Basic Operations	p. 200
The High-Speed Technique	p. 202
High-Density Techniques	p. 204
The Advantage of Chain Architecture	p. 204
The One-Pitch-Shift Cell	p. 204
The Hierarchical Wordline Scheme without Extra Metal	p. 205
The Small-Area Dummy Cell Scheme	p. 206
Chip Size Comparison	p. 208
Low-Voltage Design	p. 210
Summary	p. 212
References	p. 212
Capacitor-on-Metal/Via-Stacked-Plug (CMVP) Memory Cell Technologies and Application to a Nonvolatile SRAM	p. 215
Introduction	p. 215
The CMVP Memory Cell	p. 216
The cell Structure and Process	p. 216
The Electrical Properties of the PZT Capacitor	p. 220
Plug-Contact Resistance	p. 221
The Cell-Array Monitor	p. 222
A Nonvolatile SRAM with Backup Ferroelectric Capacitors (NV-SRAM)	p. 222
Conventional Shadow RAMs Using Ferroelectric Capacitors	p. 223
TheNV-SRAMCell	p. 225
The Cell Structure	p. 225
The READ Operation	p. 225
The WRITE Operation	p. 225
The STORE Operation	p. 226
The RECALL Operation	p. 226
The Cell Layout	p. 227
Other Advantages	p. 228
Chip Fabrication and Experiments	p. 229
Summary	p. 231
References	p. 231
The FET-Type FeRAM	p. 233
Introduction	p. 233
Novel Applications of Ferroelectric-Gate FETs	p. 234
The Single-Transistor-Cell-Type Digital Memory	p. 234
Reconfigurable LSIs	p. 236
An Analog Memory for Storing Synaptic Weight in a Neural Network	p. 236
The Basic Operation of Ferroelectric-Gate FETs	p. 238
Generation of the Depolarization Field	p. 238
Improvement of the Data Retention Characteristics	p. 238
A Comparison of the MFIS and MFMIS Structures	p. 240
Recent Experimental Results	p. 241
The Relation between the Buffer Layer Thickness and the Area Ratio	p. 241
Control of the Crystal Orientation	p. 243
Other Important Buffer Layers and Ferroelectric Films245
The IT	p. 2C Type Ferr
The Cell Structure and Basic Operation	p. 246
Experimental Results	p. 247
High-Density Integration	p. 250
References	p. 250
Applications and Future Prospects
Ferroelectric Technologies for Portable Equipment	p. 255
Introduction	p. 255
Process Technologies for Low-Voltage Operation	p. 256
Experimental and Characterization	p. 256
Experimental Results	p. 257
Nonvolatile Logic	p. 261
The Ferroelectric Nonvolatile Latch	p. 261
Test ChipMeasurement	p. 263
Scaling Issues	p. 265
Other Nonvolatile Latch Circuits	p. 265
Applications Using the Nonvolatile Latch	p. 266
A Novel Functional Device	p. 267
Summary	p. 269
References	p. 269
The Application of FeRAM to Future Information Technology World	p. 271
Introduction-A Prospect for the Future Information Technology World	p. 271
Smart Card Market/SystemRequirements	p. 273
Nonvolatile Memory Characteristics	p. 274
Contactless Cards	p. 275
Code-Reprogrammable Multi-Application Cards	p. 278
Future Trends	p. 282
References	p. 282
Index	p. 283
Table of Contents provided by Publisher. All Rights Reserved.

ISBN: 9783540407188
ISBN-10: 3540407189
Series: Topics in Applied Physics
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 291
Published: 1st May 2004
Publisher: Springer-Verlag Berlin and Heidelberg Gmbh & Co. Kg
Country of Publication: DE
Dimensions (cm): 23.5 x 15.5 x 2.16
Weight (kg): 0.56