Emerging Memories

Technologies and Trends

By: Betty Prince

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Hardcover | 28 February 2002

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Hardcover
300 Pages

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23.5 x 15.88 x 3.18

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Semiconductor memories have have increased fourfold in density about every three years from less than 1K-bit in 1972 to more than 1G-bit in 2002. Applications which historically permitted the technology to trade-off speed and power, now demand both high speed and low power. While the price has dropped from one dollar per 100 bits too less than one dollar per 100 megabits, the production technology has become so complex and expensive that the average multi billion-dollar company can no longer afford it. The circuits have reached geometries so small that semiconductor theories are being altered and fundamental limits are foreseen. While there are undoubtedly many years of life left in the old memory technology, the world is currently taking a hard look at wether there might be a better way. This book explores a range of new memory products and technologies. The concept for some has been around for years, some are completly new and some involve materials that have been in volume production in other type of devices for some time. In addition to looking at using known devices and materials in novel ways, there technologies are being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the polymer memories which hold the potential for the significant manufacturing reduction.

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You Can Find This Book In

Non-Fiction Computing & I.T.Computer Hardware Engineering & Technology Electronics & Communications Engineering Electronics Engineering Circuits & Components Electronic Devices & Materials Semi-Conductors & Super-Conductors Energy Technology & Engineering Electrical Engineering Computer Science

Systems Analysis & Design Other Technologies & Applied Sciences Applied Optics Computer Architecture & Logic Design Mechanical Engineering & Materials Materials Science Computer Networking & Communications

Acknowledgments
About the author
Introduction
Ferroelectric RAMs	p. 1
Background of Ferroelectric Memory Technologies	p. 1
Basic Ferroelectric Technology	p. 1
Ferroelectric RAMs with 2T2C Cells	p. 5
Early Ferroelectric Memory Architectures	p. 8
2T2C FeRAM Architectures	p. 11
Comparison of 2T2C FeRAM to Other Memories	p. 14
Ferroelectric RAMs with 1T1C Cells	p. 15
Evolution of 1T1C FeRAM Architectures	p. 18
Reference Cells for the 1T1C FeRAM	p. 19
Cell Plate Configurations for the 1T1C FeRAM	p. 29
Novel Ferroelectric Cells	p. 37
Ferroelectric Materials	p. 39
Reliability Considerations in Ferroelectrics	p. 45
Modeling and Simulation of Ferroelectric Capacitors	p. 52
Applications and Trends for Ferroelectric RAMs	p. 52
The MFS FET Cell	p. 58
Magnetic RAMs	p. 69
Overview of Magnetic Memories	p. 69
Anisotropic Magnetic RAM	p. 70
The Giant-Magneto-Resistive (GMR) Effect	p. 73
Spin Valve Cell and Operation	p. 76
Pseudo-Spin Valve MRAM Cell and Operation	p. 85
Issues for Pseudo Spin Valve MRAMs	p. 90
Pseudo Spin Valve Architecture	p. 92
Spin Valve Models	p. 93
Spin-Valve Type MRAM Market and Application	p. 93
Other Spin-Valve MRAM Cells and Technologies	p. 97
Magnetic Tunnel Junction Technology	p. 101
Magnetic Tunneling Junction Memory Cells	p. 105
MTJ Cells With Series Transistors	p. 107
Technical and Reliability Issues for the MTJ MRAM	p. 118
Applications and Trends for Magnetic RAMs	p. 122
Hall Effect MRAM Cells	p. 127
Non-Volatiles After Floating Gate	p. 133
The Problem with Floating Gate Non-volatile Memories	p. 133
Multi-bit Memory Storage	p. 134
Proton Memory	p. 134
MONOS/SONOS Technology	p. 137
Single Electron Memories	p. 143
Multiple Island Memories	p. 153
Silicon Nanocrystals/Nanodots	p. 156
Alternative Nanocrystal Devices	p. 167
Manufacturing Techniques for Nanocrystals	p. 173
Applications for Silicon Nanocrystal Memories	p. 178
After DRAM - Some Novel Contenders	p. 181
Overview	p. 181
The Single Electron Shut-off Memory	p. 182
The PLED Transistor Gain Cell	p. 184
Negative Resistance - DRAM Replacement	p. 190
The Esaki Diode	p. 191
The Evolution of Resonant Tunneling Devices	p. 195
Making RTD's into Memories	p. 202
Resonant Interband Tunneling Devices (RITD)	p. 215
Using the Thyristor as a Negative Resistance Device	p. 225
Memories after Silicon	p. 235
Introduction and Overview	p. 235
Polymer Memory	p. 236
Molecular Switch Memories	p. 249
Chalcogenic Memories	p. 254
Carbon Nanotube Memories	p. 258
Other New Material Memories	p. 264
Index	p. 271
Table of Contents provided by Blackwell. All Rights Reserved.

Emerging Memories

Technologies and Trends

At a Glance

Hardcover

Shipping

How to return your order

Defective items

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