+612 9045 4394
Electromigration and Electronic Device Degradation - Aris Christou

Electromigration and Electronic Device Degradation


Published: 29th December 1993
Ships: 7 to 10 business days
7 to 10 business days
RRP $709.99
or 4 easy payments of $122.84 with Learn more

Electromigration is a mass transport effect in metals under high current densities, which causes the metal atoms to migrate away from a high current density point and leads to the failure of integrated circuits. It is therefore an important reliability issue. This study reviews the topic for both the silicon and GaAs technologies. It surveys the status of electromigration physics in microelectronics, and summarizes various rate controlling details, including an investigation of temperature dependence.

Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (A. Christou).

Simulation and Computer Models for Electromigration (P. Tang).

Temperature Dependencies on Electromigration (M. Pecht & P. Lall).

Electromigration and Related Failure Mechanisms in VLSI Metallizations (A. Christou & M. Peckerar).

Metallic Electromigration Phenomena (S. Krumbein).

Theoretical and Experimental Study of Electromigration (J. Zhao).

GaAs on Silicon Performance and Reliability (P. Panayotatos, et al.).

Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (A. Christou).

Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (A. Christou).

Reliable Metallization for VLSI (M. Peckerar).


ISBN: 9780471584896
ISBN-10: 0471584894
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 343
Published: 29th December 1993
Country of Publication: US
Dimensions (cm): 24.0 x 16.0  x 2.0
Weight (kg): 0.67
Edition Number: 1