Electromigration is a mass transport effect in metals under high current densities, which causes the metal atoms to migrate away from a high current density point and leads to the failure of integrated circuits. It is therefore an important reliability issue. This study reviews the topic for both the silicon and GaAs technologies. It surveys the status of electromigration physics in microelectronics, and summarizes various rate controlling details, including an investigation of temperature dependence.
Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits (A. Christou).
Simulation and Computer Models for Electromigration (P. Tang).
Temperature Dependencies on Electromigration (M. Pecht & P. Lall).
Electromigration and Related Failure Mechanisms in VLSI Metallizations (A. Christou & M. Peckerar).
Metallic Electromigration Phenomena (S. Krumbein).
Theoretical and Experimental Study of Electromigration (J. Zhao).
GaAs on Silicon Performance and Reliability (P. Panayotatos, et al.).
Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs (A. Christou).
Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations (A. Christou).
Reliable Metallization for VLSI (M. Peckerar).
Number Of Pages: 343
Published: 29th December 1993
Country of Publication: US
Dimensions (cm): 24.0 x 16.0
Weight (kg): 0.67
Edition Number: 1