Electrical and Thermal Characterization of MESFETs, HEMTs and HBTs

By: Robert Anholt

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Hardcover | 30 November 1994

At a Glance

Hardcover
324 Pages

Dimensions(cm)
24.13 x 16.51 x 1.91

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This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers.

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You Can Find This Book In

Non-Fiction Engineering & Technology Electronics & Communications Engineering Electronics Engineering Electronic Devices & Materials Transistors Circuits & Components Science Physics Thermodynamics & Heat Energy Technology & Engineering Electrical Engineering

Microwave Technology Technology in General

Physical Modeling of III-V Semiconductor Devices
How to Measure Temperature-dependent Equivalent Circuits
Self-heating in Transistors
GaAs MESFET Equivalent Circuits (Room Temperature)
Temperature-dependent MESFET Equivalent Circuits
HEMT Equivalent Circuits (Room Temperature)
Temperature-dependent HEMT Equivalent Circuits
Gate Currents in MESFETs and HEMTs
Heterojunction Bipolar Transistors
Circuit Modeling
Table of Contents provided by Publisher. All Rights Reserved.

Electrical and Thermal Characterization of MESFETs, HEMTs and HBTs

At a Glance

Hardcover

Shipping

How to return your order

Defective items

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