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Doping in III-V Semiconductors : Cambridge Studies in Semiconductor Physics and Microelectronic Engineering - E. F. Schubert

Doping in III-V Semiconductors

Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

Hardcover

Published: 26th February 2004
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Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.

"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics...His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today

Shallow impurities
Phenomenology of deep levels
Semiconductor statistics
Growth technologies
Doping with elemental sources
Gaseous doping sources
Impurity characteristics
Redistribution of impurities
Deep centers
Doping in heterostructures, quantum wells, and superlattices
Delta doping
Characterization technique
Table of Contents provided by Publisher. All Rights Reserved.

ISBN: 9780521419192
ISBN-10: 0521419190
Series: Cambridge Studies in Semiconductor Physics and Microelectronic Engineering
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 632
Published: 26th February 2004
Publisher: Cambridge University Press
Country of Publication: GB
Dimensions (cm): 24.13 x 16.51  x 3.18
Weight (kg): 1.02