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Dilute Nitride (III-N-V) Semiconductors - Mohamed Henini

Dilute Nitride (III-N-V) Semiconductors

Hardcover

Published: 15th December 2004
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* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.

* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

The high speed lasers operating at wavelength of 1.3 m and 1.55 m are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.

"Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology" organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.
* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas
* Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.

Contents
Preface v
Mbe Growth and Characterization of Long Wavelength Dilute Nitride Iiiv Alloys
Introduction
MBE Growth of Dilute IIIV Nitrides
Dilute Nitride Characterization
Energy Band and Carrier Transport Properties
Annealing and NIn Nearest Neighbor Effects
Summary Acknowledgements
References
Epitaxial Growth of Dilute Nitrides By Metal-Organic Vapour Phase Epitaxy
Introduction
Epitaxial Growth of GaInAsN-based Structures
Long Wavelength GaAs-based Laser Performances
Conclusion
Acknowledgements
References
The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors
Introduction to Dilute Nitride Semiconductors
The Chemical Beam Epitaxial/Metalorganic Molecular Beam Epitaxial (CBE/MOMBE) Growth Process
CBE of Dilute Nitride Semiconductors
Fundamental Studies of GaNx As (12 x ) Band Structure
The Compositions and Properties of Dilute Nitrides Grown by CBE
CBE-grown Dilute Nitride Devices
The Potential for Production CBE of Dilute Nitrides
Conclusions
Acknowledgements
References
Mombe Growth and Characterization Of Iiiv-N Compounds and Application to Inas Quantum Dots
Introduction
Mombe Growth and Characterization of GaAsN
Relation of In and N Incorporations in the Growth of GaInNAs
Growth and Characterization of GaAsNSe New Alloy
Application of GaAsN to InAs Quantum Dots
Summary
Acknowledgements
References
Recent Progress in Dilute Nitride Quantum Dots
Self-organized Quantum Dots
Dilute Nitride Quantum Dots
Recent Experimental Progress in GaInNAS QDS
Other Kinds of Dilute Nitride QDs
Summary and Future Challenges in Dilute Nitride QDs: Acknowledgements: References
Physics of Isoelectronic Dopants in Gaas
Nitrogen Isoelectronic Impurities
The Failure of the Virtual Crystal Approximation
Prevalent Theoretical Models on Dilute Nitrides
Electroreflectance Study of GaAsN
Resonant Raman Scattering Study of Conduction Band States
Compatibility with other Experimental Results
A Complementary Alloy: GaAsBi
Summary
Conclusion
References
Measurement of Carrier Localization Degree, Electron Effective Mass, And Exciton Size in In x Ga1 2 x As 1 2 y N y Alloys
Introduction
Experimental
Single Carrier Localization in In x Ga1 2 x As 1 2 y N y
Measurement of the Electron Effective Mass and Exciton Wave function Size
Conclusions
Acknowledgements
References
Probing the Unusual Band Structure of Dilute Ga(Asn)Quantum Wells By Magneto-Tunnelling Spectroscopy and Other Techniques
Introduction
Resonant Tunnelling Diodes Based on Dilute Nitrides
Magneto-Tunnelling Spectroscopy to Probe the Conduction Band Structure of Dilute Nitrides
Electronic Properties: From the Very Dilute Regime ( , 0.1%) to the Dilute Regime
Conduction in Dilute Nitrides and Future Prospects
Summary and Conclusions
Acknowledgements
References
Photo- and Elect
Table of Contents provided by Publisher. All Rights Reserved.

ISBN: 9780080445021
ISBN-10: 0080445020
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 640
Published: 15th December 2004
Publisher: Elsevier Science & Technology
Country of Publication: GB
Dimensions (cm): 24.0 x 16.5  x 2.54
Weight (kg): 1.3