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Crucial Issues in Semiconductor Materials and Processing Technologies : NATO SCIENCE SERIES SERIES E, APPLIED SCIENCES - S. Coffa

Crucial Issues in Semiconductor Materials and Processing Technologies

NATO SCIENCE SERIES SERIES E, APPLIED SCIENCES

By: S. Coffa (Editor), Francesco Priolo (Editor), Emanuele Rimini (Editor), J. M. Poate (Editor)

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Published: 31st October 1992
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Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.

Preface
List of Contributors
Defect Aspects of Advanced Device Technologiesp. 3
Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin PECVD a-SiO[subscript 2] Gate Dielectricp. 27
Silicon and Silicon: Germanium Alloy Growth; Means and Applicationsp. 33
Preparation and Characterization of Silicon Ribbonsp. 49
Rapid Thermal Chemical Vapor Deposition of Si[subscript x]Ge[subscript 1-x] Alloys on Si and SiO[subscript 2] and New Applications of Si[subscript x]Ge[subscript 1-x] Alloys in Advanced MOSFET Processesp. 55
Kinetics and Dynamics of MBE Growthp. 61
Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layersp. 79
Optoelectric Materialsp. 83
Electrical Characteristics of PECVD Silicon Nitride/Compound Semiconductor Interfaces for Optoelectronic Device Passivationp. 103
Fundamentals of Semiconductor Processingp. 111
Optical Analysis of Oxygen in Epitaxial Siliconp. 119
Electrical Properties of "Clean" and Fe-Decorated Stacking Faults in p-type Sip. 129
On the Dirty Contacts on n-type Siliconp. 135
Mossbauer Study of the DX-Center in Te-Implanted Al[subscript x]Ga[subscript 1-x]Asp. 141
Surface Science and Semiconductor Processingp. 147
Lithography for Manufacturing at 0.25 Micrometer and Belowp. 153
Basic Aspects of Ion Implantationp. 167
Trends in Ion Implantation for Semiconductor and Optical Materials Researchp. 195
Orientation Phenomena in MeV Implants of P in Sip. 207
Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N[superscript +] Implantation in Siliconp. 213
Dislocation Formation in Si Implanted at Elevated Temperaturep. 219
Preparation and Characterization of Thin Film Simox Materialsp. 225
The Effect of Electronic Energy Loss on Epitaxial [actual symbol not reproducible] Thin Films After Heavy Ion Irradiation and Annealing up to Room Temperaturep. 233
Structural Study of The Epitaxial Realignment of Polycrystalline Si Films onto Si Substratesp. 239
Plasma Immersion Ion Implantation: A Perspectivep. 245
A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in Inert-Gas Implanted Siliconp. 251
Plasma Etching Processesp. 257
Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During Electrical Stressingp. 279
Minority Carrier Lifetime Measurements After High Temperature Pretreatmentp. 299
Copper-Based Metallizationp. 305
Thermal Stability of Ti-Mo and Ti-Cu Bilayer Thin Films on Aluminap. 321
Hyperfine Fields in Epitaxially Grown Co on GaAsp. 327
Titanium Nitride Process Developmentp. 331
Materials Aspects and Implementation of Silicides for ULSIp. 337
Ion Beam Synthesis of Buried Iron Disilicidep. 363
Diffusion in Cobalt Silicide During Silicide Formationp. 369
Formation of Germanides by Rapid Thermal Annealing and Their Applications in Advanced MOSFET Processesp. 375
Diffusion in Crystalline Silicon and Germanium - The State of the Art in Briefp. 383
Symmetry Methods in Diffusionp. 403
Diffusion of Gold in Sputtered Amorphous Siliconp. 409
Dopant Diffusion and Point Defects in Silicon During Silicidationp. 415
Lateral Diffusion Couples and Their Contribution to Understanding Thin Film Reactionsp. 421
Diffusion and Defects in Amorphous Siliconp. 427
EPR Study of Defects Produced by MeV Ion Implantation into Siliconp. 445
Vacancy Character of Damage Zones in Ion-Irradiated Siliconp. 451
Multiple Amorphous States in Ion Implanted Semiconductors (Si and InP)p. 459
The Mechanism of Solid Phase Epitaxyp. 465
The Amorphous Side of Solid Phase Epitaxyp. 477
Metal-Enhanced Growth of Siliconp. 483
Ion-Assisted Phase Transitions in Siliconp. 501
Ion-Assisted Nucleation in Amorphous Siliconp. 523
List of Participantsp. 529
Indexp. 535
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9780792320036
ISBN-10: 0792320034
Series: NATO SCIENCE SERIES SERIES E, APPLIED SCIENCES
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 538
Published: 31st October 1992
Publisher: Springer
Country of Publication: NL
Dimensions (cm): 23.5 x 15.5  x 3.18
Weight (kg): 2.13