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Computational Electronics : Semiconductor Transport and Device Simulation - Karl Hess

Computational Electronics

Semiconductor Transport and Device Simulation

By: Karl Hess (Editor), Jean-Pierre Leburton (Editor), Umberto Ravaioli (Editor)


Published: 30th November 1990
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Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis- cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci- ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc- cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.

Device Simulation for Silicon ULSI.- Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor Models.- Drift-Diffusion Systems: Analysis of Discretized Models.- Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods.- Adaptive Mesh Refinement for 2-D Numerical Analysis of Semiconductor Devices.- Adaptive Grids for Semiconductor Modelling.- A Numerical Large Signal Model for the Heterojunction Bipolar Transistor.- The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot.- A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators.- A Self-Consistent Calculation of Spatial Spreading of the Quantum Well in HEMT.- A New Nonparabolic Hydrodynamic Model with Quantum Corrections.- The Conditions of Device Simulation Using Full Hydrodynamic Equations.- Device Simulation Augmented by the Monte Carlo Method.- Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors.- Dynamics of Photoexcited Carriers in GaAs.- The DAMOCLES Monte Carlo Device Simulation Program.- Iterative Spectral Solution of Boltzmann's Equation for Semiconductor Devices.- Computer Experiments for High Electron Mobility Transistors and Avalanching Devices.- Minority Electron Transport Across Submicron Layers of GaAs and InP.- Photoconductive Switch Simulation with Absorbing Boundary Conditions.- Simulation of Sub-Micron GaAs MESFETs for Microwave Control.- Eigenvalue Solution to Steady-State Boltzmann Equation.- Variable Threshold Heterostructure FET Studied by Monte Carlo Simulation.- A Study of the Relaxation-Time Model based on the Monte Carlo Simulation.- Field Assisted Impact Ionization in Semiconductors.- Parallelization of Monte Carlo Algorithms in Semiconductor Device Physics on Hypercube Multiprocessors.- Comparative Numerical Simulations of a GaAs Submicron FET Using the Moments of the Boltzmann Transport and Monte Carlo Methods.- J-V Characteristics of Graded AlxGa1-xAs Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method.- Monte Carlo Simulation of Lateral Surface Superlattices in a Magnetic Field.- Quantum-Well Infrared Photodetectors: Monte Carlo Simulations of Transport.- Simulation of Non-Stationary Electron Transport Using Scattering Matrices.- Rigid Pseudo-Ion Calculation of the Intervalley Electron-Phonon Interaction in Silicon.- Numerical Study of High Field Transport in SiO2 with Traps: A Coupled Monte Carlo and Rate Equation Model.- Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators.- Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices.- Monte Carlo Simulation of Low-Dimensional Nanostructures.- Many-Body Effects and Density Functional Formalism in Nanoelectronics.- Modeling InAs/GaSb/AlSb Interband Tunnel Structures.- Quantum Kinetic Theory of Tunneling Devices.- Transport in Electron Waveguides: Filtering and Bend Resistances.- Numerical Methods for the Simulation of Quantum Devices Using the Wigner Function Approach.- Density Matrix Coordinate Representation Numerical Studies of Quantum Well and Barrier Devices.- A Distribution-Function Approach in the Many-Body Quantum Transport Theory of Quantum-Based Devices.- The Generalized Scattering Matrix Approach: An Efficient Technique for Modeling Quantum Transport in Relatively Large and Heavily Doped Structures.- Quantum Ray Tracing: A New Approach to Quantum Transport in Mesoscopic Systems.- On Transport in Heterostructures within the Independent-Particle Picture.- Transient Response in Mesoscopic Devices.- The Inclusion of Scattering in the Simulation of Quantum Well Devices.- Numerical Study of Electronic States in a Quantum Wire at Crossing Heterointerfaces.- Dissipative Quantum Transport in Electron Waveguides.- Exchange Energy Interactions in Quantum Well Heterostructures.- Asymptotic Structure of the Density-Gradient Theory of Quantum Transport.- Calculation of Transport Through Ballistic Quantum Structures.- Numerical Study of the Higher Order Moments of Conductance Fluctuations in Mesoscopic Structures.- Author Index.

ISBN: 9780792390886
ISBN-10: 0792390881
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 268
Published: 30th November 1990
Publisher: Springer
Country of Publication: NL
Dimensions (cm): 24.77 x 16.51  x 1.91
Weight (kg): 0.66