Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.
Chemical Beam Epitaxy: An Introduction (G. Davies, et al.).
Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol).
Precursors for Chemical Beam Epitaxy (D. Bohling).
Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord).
Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy).
CBE InP-Based Materials and Devices (W. Tsang & T. Chiu).
MOMBE of Antiminides and Growth Model (H. Asahi).
Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa).
Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki).
Gas Source Molecular Beam Epitaxy (L. Goldstein).
Dopants and Dopant Incorporation (T. Whitaker & T. Martin).
Selected Area Epitaxy (H. Heinecke & G. Davies).
Chemical Beam Etching (W. Tsang & T. Chiu).
Laser-Assisted Epitaxy (H. Sugiura).