III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology.
Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
..." comprehensive answers to many practical questions, those seeking more detailed treatment are directed to an excellent bibliography. ... concise text of outstanding clarity. Because of these rare qualities the book is strongly recommended for inclusion in libraries associated with either academic or industrial institutions where semiconductor technology is taught or practised." The Australian Physicist. mprehensive answers to many practical questions, those seeking more detailed treatment are directed to an excellent bibliography. ... concise text of outstanding clarity. Because of these rare qualities the book is strongly recommended for inclusion in libraries associated with either academic or industrial institutions where semiconductor technology is taught or practised." The Australian Physicist.
PREFACE GALLIUM ARSENIDE AND FRIENDS ELEMENTS OF DIFFUSION The diffusion equations Analytical solutions to the diffusion equation Finite difference methods of solution Experimental techniques Analysis of results Interaction of defects The built-in field effect The external system Assessment of published data DIFFUSION OF SHALLOW DONORS, INCLUDING GROUP IV Sulphur Selenium and tellurium Tin Silicon and germanium SHALLOW ACCEPTORS, ESPECIALLY ZINC The substitutional-interstitial mechanism Zinc in GaAs Zinc in gallium phosphide Zinc in indium phosphide Zinc in other compounds Cadmium in InP Cadmium in other compounds Diffusion of other group II elements DIFFUSION OF TRANSITION ELEMENTS Chromium in GaAs Manganese in GaAs Iron in GaAs Cobalt in GaAs Iron and chromium in InP OTHER FAST DIFFUSERS Silver in InP Silver in GaAs Silver in InAs and GaP Diffusion of gold Diffusion of copper SELF-DIFFUSION AND RELATED PHENOMENA Diffusion in GaAs InP and InAs Self-diffusion in InSb Diffusion in GaSb Diffusion in superlattices
Number Of Pages: 236
Published: 1st January 1988
Publisher: INST OF PHYSICS PUB
Country of Publication: GB
Dimensions (cm): 22.07 x 14.81
Weight (kg): 0.41
Edition Number: 1