The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Series: Computational Microelectronics
Number Of Pages: 289
Published: 18th December 2003
Publisher: SPRINGER VERLAG GMBH
Country of Publication: AT
Dimensions (cm): 23.5 x 15.5
Weight (kg): 1.39