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Analysis and Simulation of Heterostructure Devices : Computational Microelectronics - Vassil Palankovski

Analysis and Simulation of Heterostructure Devices

Computational Microelectronics


Published: 18th December 2003
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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

List of Acronyms
List of Symbols
Introductionp. 1
State-of-the-Art of Materials, Device Modeling, and RF Devicesp. 4
Physical Modelsp. 26
RF Parameter Extraction for HEMTs and HBTsp. 141
Heterojunction Bipolar Transistorsp. 154
High Electron Mobility Transistorsp. 204
Novel Devicesp. 236
A. App.: Benchmark Structuresp. 239
Referencesp. 243
Indexp. 274
List of Figuresp. 278
List of Tablesp. 288
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9783211405376
ISBN-10: 3211405372
Series: Computational Microelectronics
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 289
Published: 18th December 2003
Country of Publication: AT
Dimensions (cm): 23.5 x 15.5  x 1.91
Weight (kg): 1.39