


Hardcover
Published: 1st September 1997
ISBN: 9780125330237
Number Of Pages: 311
Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
GexSi1-x Eptaxial Layer Growth and Application Integrated Circuits | |
Introduction | |
GexSi1-x Heterojunctions- General Considerations | |
Growth by Molecular Beam Epitaxy: MBE Systems | |
Surface Cleaning and Preparation | |
Germanium Incorporation and Abruptness | |
p-type Doping | |
n-type Doping | |
Incororation of Adatoms and Growth Temperature Limits | |
Gas Sources | |
Growth by Chemical Vapor Deposition: Low-Temperature Growth | |
Growth Systems | |
Surface Reactions | |
Kinetics ofLayer Growth- Hybride Reactants | |
Kinetics of Layer Growth- Dichlorosilane | |
Transition Abruptness | |
Minimum Growth Temperature | |
Surface Preperation | |
Overview/Summary | |
Application to Heterojunction Bipolar Transistors: Operation of HBT | |
Early Reports of HBTs | |
MBE-Grown HBT Process | |
UHV/CVD-Grown HBT Process | |
Profile Design for the UHV/CVD HBT | |
HBT Future Prospects | |
The GexSi1-x Channel MOSFET | |
Conclusions and Future Prospects | |
Acknowledgments | |
References | |
Thin-FilmEpitaxial Layers for the Detection of Infrared Signals | |
Introduction | |
Infrared Bands, Detectors, and Materials: Infrared Spectral Bands | |
Detectors of Infrared Radiation | |
Material Considerations for LWIR Detection | |
Summary of PT/SI Detector Basics | |
Group-IV Epitaxial Devices for Infrared Detectors: Delta-Doped PT/SI Detectors | |
SI-Homojunction Detectors | |
Si/Ge/Si Heterojunction Internal Photoemission (HIP) Detectors | |
Silicide/SiGe Schottky Detectors | |
Detectors Involving Epitaxial Silicides | |
Growth and Fabrication of Si-Based Infrared Detector Structures: Doping and Temperature | |
Surface Preparation and Cleaning | |
Uniformity | |
Silicide/SiGe Fabrication | |
Conclusions | |
References | |
Platinum Silicide Internal Emission Ifrared Imaging Arrays | |
Introduction: Staring-Mode Operation | |
Requirements Imposed by Thermal Infrared Signals | |
Early Efforts Leading to Current PtSi IR Camera Technology | |
The Internal Emission Process: Internal Photemission | |
Thermionic Emission (Dark Current) | |
Internal Field Emission | |
State of the Art Platinum Silicide Detectors and Arrays: PtSi Spectral Response | |
Fowler Emission Efficiency | |
Array Response Uniformity | |
Excess Low-Frequency Noise | |
Array Parameters | |
Infrared Cameras | |
Future of PtSi Detector and Sensor Development: Array Size | |
Pixel Dimensions | |
Optical Absorption in the Silicide Electrode | |
Detector Fill Factors | |
Industrial vs | |
Military Sensor Requirements | |
Improvement of Emission Efficiency | |
Extension of Cut-Off Wavelength | |
General Observations | |
Summary | |
III-V Quantum-Well Structures for High-Speed Electronics: Introduction to Quantum-Well Intersubband Detectors: Direct Detection | |
Heterodyne Detection | |
Quantum-Well Detector Design and Intersubband Absorption: Quantum-Well Energy Levels | |
Epitaxial Growth | |
Intersubband Absorption Measurement Techniques | |
Intersubband Absorption Results | |
MQW Detector Fabrication and DC Response Characteristics: Fabrication and Packaging | |
Dark Current | |
Spectral and Absolute Responsivity | |
Photoconductive Gain | |
External Quantum Efficiency | |
Electrical Bandwidth and Optical-Heterodyne Experiments: Photoelectron Generations- Recombination Noise Technique | |
Diode-Laser Mixing Technique | |
Microwave Rectification Technique | |
Discussion of Bandwidthand Lifetime | |
Heterodyne Sensitivity Technique | |
Heterodyne Sensitivity Results | |
Applications: Instrumental Resolution and Sensitivity | |
High-Resolution Molecular Spectroscopy | |
Long-Range, High-Data-Rate Communications | |
Improvements in MAW Heterodyne Detectors: Enhancement of External Quantum Efficiency | |
Design of Detectors Having Lifetime-Limited Electrical Bandwidth | |
Quantum-Well Devices for Infrared Emission: Introduction and Background | |
Quantum-Wells in Interband-Type IR Sources: Role of Size ad Strain Effects- General. M<$$$> | |
Table of Contents provided by Publisher. All Rights Reserved. |
ISBN: 9780125330237
ISBN-10: 0125330235
Series: Thin Films Vol. 23
Audience:
Professional
Format:
Hardcover
Language:
English
Number Of Pages: 311
Published: 1st September 1997
Publisher: ACADEMIC PR INC
Country of Publication: US
Dimensions (cm): 22.91 x 15.19
x 1.91
Weight (kg): 0.61