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Advances in Research and Development : Advances in Research and Development: Vol. 23 Volume 23 - Maurice H. Francombe

Advances in Research and Development

Advances in Research and Development: Vol. 23 Volume 23

By: Maurice H. Francombe (Editor), John L. Vossen (Editor)

Hardcover

Published: 1st September 1997
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Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

GexSi1-x Eptaxial Layer Growth and Application Integrated Circuits
Introduction
GexSi1-x Heterojunctions- General Considerations
Growth by Molecular Beam Epitaxy: MBE Systems
Surface Cleaning and Preparation
Germanium Incorporation and Abruptness
p-type Doping
n-type Doping
Incororation of Adatoms and Growth Temperature Limits
Gas Sources
Growth by Chemical Vapor Deposition: Low-Temperature Growth
Growth Systems
Surface Reactions
Kinetics ofLayer Growth- Hybride Reactants
Kinetics of Layer Growth- Dichlorosilane
Transition Abruptness
Minimum Growth Temperature
Surface Preperation
Overview/Summary
Application to Heterojunction Bipolar Transistors: Operation of HBT
Early Reports of HBTs
MBE-Grown HBT Process
UHV/CVD-Grown HBT Process
Profile Design for the UHV/CVD HBT
HBT Future Prospects
The GexSi1-x Channel MOSFET
Conclusions and Future Prospects
Acknowledgments
References
Thin-FilmEpitaxial Layers for the Detection of Infrared Signals
Introduction
Infrared Bands, Detectors, and Materials: Infrared Spectral Bands
Detectors of Infrared Radiation
Material Considerations for LWIR Detection
Summary of PT/SI Detector Basics
Group-IV Epitaxial Devices for Infrared Detectors: Delta-Doped PT/SI Detectors
SI-Homojunction Detectors
Si/Ge/Si Heterojunction Internal Photoemission (HIP) Detectors
Silicide/SiGe Schottky Detectors
Detectors Involving Epitaxial Silicides
Growth and Fabrication of Si-Based Infrared Detector Structures: Doping and Temperature
Surface Preparation and Cleaning
Uniformity
Silicide/SiGe Fabrication
Conclusions
References
Platinum Silicide Internal Emission Ifrared Imaging Arrays
Introduction: Staring-Mode Operation
Requirements Imposed by Thermal Infrared Signals
Early Efforts Leading to Current PtSi IR Camera Technology
The Internal Emission Process: Internal Photemission
Thermionic Emission (Dark Current)
Internal Field Emission
State of the Art Platinum Silicide Detectors and Arrays: PtSi Spectral Response
Fowler Emission Efficiency
Array Response Uniformity
Excess Low-Frequency Noise
Array Parameters
Infrared Cameras
Future of PtSi Detector and Sensor Development: Array Size
Pixel Dimensions
Optical Absorption in the Silicide Electrode
Detector Fill Factors
Industrial vs
Military Sensor Requirements
Improvement of Emission Efficiency
Extension of Cut-Off Wavelength
General Observations
Summary
III-V Quantum-Well Structures for High-Speed Electronics: Introduction to Quantum-Well Intersubband Detectors: Direct Detection
Heterodyne Detection
Quantum-Well Detector Design and Intersubband Absorption: Quantum-Well Energy Levels
Epitaxial Growth
Intersubband Absorption Measurement Techniques
Intersubband Absorption Results
MQW Detector Fabrication and DC Response Characteristics: Fabrication and Packaging
Dark Current
Spectral and Absolute Responsivity
Photoconductive Gain
External Quantum Efficiency
Electrical Bandwidth and Optical-Heterodyne Experiments: Photoelectron Generations- Recombination Noise Technique
Diode-Laser Mixing Technique
Microwave Rectification Technique
Discussion of Bandwidthand Lifetime
Heterodyne Sensitivity Technique
Heterodyne Sensitivity Results
Applications: Instrumental Resolution and Sensitivity
High-Resolution Molecular Spectroscopy
Long-Range, High-Data-Rate Communications
Improvements in MAW Heterodyne Detectors: Enhancement of External Quantum Efficiency
Design of Detectors Having Lifetime-Limited Electrical Bandwidth
Quantum-Well Devices for Infrared Emission: Introduction and Background
Quantum-Wells in Interband-Type IR Sources: Role of Size ad Strain Effects- General. M<$$$>
Table of Contents provided by Publisher. All Rights Reserved.

ISBN: 9780125330237
ISBN-10: 0125330235
Series: Thin Films
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 311
Published: 1st September 1997
Publisher: Elsevier Science Publishing Co Inc
Country of Publication: US
Dimensions (cm): 22.9 x 15.2  x 2.54
Weight (kg): 0.63