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Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
| GexSi1-x Eptaxial Layer Growth and Application Integrated Circuits | |
| Introduction | |
| GexSi1-x Heterojunctions- General Considerations | |
| Growth by Molecular Beam Epitaxy: MBE Systems | |
| Surface Cleaning and Preparation | |
| Germanium Incorporation and Abruptness | |
| p-type Doping | |
| n-type Doping | |
| Incororation of Adatoms and Growth Temperature Limits | |
| Gas Sources | |
| Growth by Chemical Vapor Deposition: Low-Temperature Growth | |
| Growth Systems | |
| Surface Reactions | |
| Kinetics ofLayer Growth- Hybride Reactants | |
| Kinetics of Layer Growth- Dichlorosilane | |
| Transition Abruptness | |
| Minimum Growth Temperature | |
| Surface Preperation | |
| Overview/Summary | |
| Application to Heterojunction Bipolar Transistors: Operation of HBT | |
| Early Reports of HBTs | |
| MBE-Grown HBT Process | |
| UHV/CVD-Grown HBT Process | |
| Profile Design for the UHV/CVD HBT | |
| HBT Future Prospects | |
| The GexSi1-x Channel MOSFET | |
| Conclusions and Future Prospects | |
| Acknowledgments | |
| References | |
| Thin-FilmEpitaxial Layers for the Detection of Infrared Signals | |
| Introduction | |
| Infrared Bands, Detectors, and Materials: Infrared Spectral Bands | |
| Detectors of Infrared Radiation | |
| Material Considerations for LWIR Detection | |
| Summary of PT/SI Detector Basics | |
| Group-IV Epitaxial Devices for Infrared Detectors: Delta-Doped PT/SI Detectors | |
| SI-Homojunction Detectors | |
| Si/Ge/Si Heterojunction Internal Photoemission (HIP) Detectors | |
| Silicide/SiGe Schottky Detectors | |
| Detectors Involving Epitaxial Silicides | |
| Growth and Fabrication of Si-Based Infrared Detector Structures: Doping and Temperature | |
| Surface Preparation and Cleaning | |
| Uniformity | |
| Silicide/SiGe Fabrication | |
| Conclusions | |
| References | |
| Platinum Silicide Internal Emission Ifrared Imaging Arrays | |
| Introduction: Staring-Mode Operation | |
| Requirements Imposed by Thermal Infrared Signals | |
| Early Efforts Leading to Current PtSi IR Camera Technology | |
| The Internal Emission Process: Internal Photemission | |
| Thermionic Emission (Dark Current) | |
| Internal Field Emission | |
| State of the Art Platinum Silicide Detectors and Arrays: PtSi Spectral Response | |
| Fowler Emission Efficiency | |
| Array Response Uniformity | |
| Excess Low-Frequency Noise | |
| Array Parameters | |
| Infrared Cameras | |
| Future of PtSi Detector and Sensor Development: Array Size | |
| Pixel Dimensions | |
| Optical Absorption in the Silicide Electrode | |
| Detector Fill Factors | |
| Industrial vs | |
| Military Sensor Requirements | |
| Improvement of Emission Efficiency | |
| Extension of Cut-Off Wavelength | |
| General Observations | |
| Summary | |
| III-V Quantum-Well Structures for High-Speed Electronics: Introduction to Quantum-Well Intersubband Detectors: Direct Detection | |
| Heterodyne Detection | |
| Quantum-Well Detector Design and Intersubband Absorption: Quantum-Well Energy Levels | |
| Epitaxial Growth | |
| Intersubband Absorption Measurement Techniques | |
| Intersubband Absorption Results | |
| MQW Detector Fabrication and DC Response Characteristics: Fabrication and Packaging | |
| Dark Current | |
| Spectral and Absolute Responsivity | |
| Photoconductive Gain | |
| External Quantum Efficiency | |
| Electrical Bandwidth and Optical-Heterodyne Experiments: Photoelectron Generations- Recombination Noise Technique | |
| Diode-Laser Mixing Technique | |
| Microwave Rectification Technique | |
| Discussion of Bandwidthand Lifetime | |
| Heterodyne Sensitivity Technique | |
| Heterodyne Sensitivity Results | |
| Applications: Instrumental Resolution and Sensitivity | |
| High-Resolution Molecular Spectroscopy | |
| Long-Range, High-Data-Rate Communications | |
| Improvements in MAW Heterodyne Detectors: Enhancement of External Quantum Efficiency | |
| Design of Detectors Having Lifetime-Limited Electrical Bandwidth | |
| Quantum-Well Devices for Infrared Emission: Introduction and Background | |
| Quantum-Wells in Interband-Type IR Sources: Role of Size ad Strain Effects- General. M<$$$> | |
| Table of Contents provided by Publisher. All Rights Reserved. |
ISBN: 9780125330237
ISBN-10: 0125330235
Series: Thin Films
Audience:
Professional
Format:
Hardcover
Language:
English
Number Of Pages: 311
Published: 1st September 1997
Publisher: Elsevier Science Publishing Co Inc
Country of Publication: US
Dimensions (cm): 22.9 x 15.2
x 2.54
Weight (kg): 0.63
