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Advanced Semiconductor Device Physics and Modeling : Electronic Materials & Devices Library - Juin J. Liou

Advanced Semiconductor Device Physics and Modeling

Electronic Materials & Devices Library

Hardcover Published: 1st March 1994
ISBN: 9780890066966
Number Of Pages: 520

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This reference provides detailed information which enables you to quickly understand the physics and modeling of mainstream devices. Packed with nearly 1,000 equations and 396 illustrations.

Prefacep. xi
Semiconductor Device Fundamentalsp. 1
Energy Band Theoryp. 1
Wave-Particle Dualityp. 1
Schrodinger Time-Dependent and Time-Independent Wave Equationsp. 3
Solutions of the Schrodinger Time-Independent Wave Equationp. 5
Energy Band Theory of Free Carriersp. 10
Effective Mass Conceptp. 14
Statistics of Free Carriers in Semiconductorsp. 16
Fermi-Dirac Statisticsp. 16
Maxwell-Boltzmann Statisticsp. 17
Free-Carrier Concentration in Semiconductorsp. 18
Temperature Effect on Free Carrier Concentrationp. 21
Generation and Recombination Processesp. 26
Band-to-Band Recombinationp. 27
Auger Recombinationp. 28
Shockley-Read-Hall Recombinationp. 29
Surface Recombinationp. 31
Boltzmann Transport Equationp. 31
Drift and Diffusion Mechanismsp. 32
Carrier Scattering Mechanismsp. 35
Basic Semiconductor Device Equationsp. 39
Monte Carlo Simulationp. 41
Problemsp. 49
Referencesp. 51
Physics and Models Related to p/n Junctionsp. 53
Description of p/n Junctionp. 53
Ambipolar Transport Equationp. 57
Linvill Lumped Circuit Modelp. 62
Sah Transmission-Line Circuit Modelp. 66
Current and Avalanche Breakdown in Reverse Biased p/n Junctionsp. 68
Current in Reverse-Biased Junctionsp. 68
Avalanche Breakdown in Reverse-Biased Junctionsp. 72
Tunneling Currents in p/n Junctionsp. 76
Reverse-Biased Tunneling Currentp. 76
Forward-Biased Tunneling Currentp. 82
Charge Storage in p/n Junctionsp. 84
Capacitances p/n Junctionsp. 84
Transient Behavior of p/n Junctionsp. 88
Abrupt Heterojunction Diodesp. 94
Heterojunction Propertiesp. 95
Energy Band Discontinuitiesp. 97
Abrupt Heterojunctions with Setback Layerp. 101
Graded Heterojunctionsp. 105
Problemsp. 113
Referencesp. 115
Bipolar Junction Transistorsp. 119
Steady-State Characteristics under Forward-Active Operationp. 123
Current-Voltage Characteristics Including Saturation and Current-Induced Base Pushoutp. 125
Base Pushout in Active Modep. 129
Base Pushout in Saturation Modep. 130
Effect of Quasi-Neutral Base Width Modulation (Early Effect)p. 138
Effect of Nonuniform Doping Concentrationp. 138
Collector Currentp. 139
Base Currentp. 141
Avalanche Multiplication in BJTsp. 142
Charge Storage in BJTsp. 145
Junction Capacitancesp. 145
Diffusion Capacitancesp. 154
Multi-Dimensional Effectsp. 156
Polyemitter Bipolar Transistorsp. 161
Switching Speed of BJTsp. 167
Large- and Small-Signal Modelsp. 173
Problemsp. 178
Referencesp. 182
Junction Field-Effect Transistorsp. 185
General Theoryp. 185
Current-Voltage Characteristics of Three-Terminal JFETsp. 189
Saturation Current I[subscript SDS]p. 189
Channel-Length Modulation Coefficient [lambda]p. 194
Modeling the Merging Parameterp. 197
Current-Voltage Characteristics of Four-Terminal JEFTsp. 198
Modeling the Merging Parameter and Channel-Length Modulationp. 203
Saturation Current I[subscript SDS]p. 203
Discussionp. 204
Short-Channel JFETsp. 207
Simulation Resultsp. 210
Large- and Small-Channel Modelsp. 223
Problemsp. 225
Referencesp. 226
Metal-Oxide-Semiconductor Field-Effect Devicesp. 227
Metal-Oxide-Semiconductor Diodesp. 228
Surface Potential and Electric Fieldp. 232
MOS Capacitancep. 235
Threshold Voltage of MOS Diodep. 239
Threshold Voltage Including Flatband Voltagep. 241
Threshold Voltage Including Body Effectp. 241
Metal-Oxide-Semiconductor Field-Effect Transistorp. 242
Threshold Voltage of MOSFETp. 242
Current-Voltage Characteristicsp. 243
Short-Channel Effectp. 255
Narrow-Channel Effectp. 258
The Effects of Short and Narrow Channels on Drain Currentp. 260
Scaling Rule for MOSFET Miniaturizationp. 265
Effects of Nonuniform Doping Profile on I-IV Characteristicsp. 266
Numerical and Experimental Resultsp. 268
Hot-Carrier Effectsp. 273
Capacitances of Intrinsic MOSFETp. 278
MOSFET Equivalent Circuitp. 282
Problemsp. 283
Referencesp. 285
Metal-Semiconductor Junction Devicesp. 289
Schottky Diodep. 289
Basic Conceptp. 289
Barrier Lowering Effectp. 296
Current-Voltage Characteristicsp. 298
Ohmic Contactp. 300
Metal-Semiconductor Field-Effect Transistorp. 300
Simple MESFET Modelp. 304
Improved Model for Submicron MESFETsp. 306
Two-Dimensional Analysisp. 318
Large- and Small-Signal Modelsp. 325
Problemsp. 330
Referencesp. 331
Heterojunction Bipolar and Field-Effect Transistorsp. 333
Single Heterojunction Bipolar Transistorsp. 333
Collector Current of Abrupt HBTsp. 337
Base Current of Abrupt HBTsp. 340
Base Gradingp. 348
Charge Storage in HBTsp. 353
Cutoff Frequency of HBTsp. 357
Abrupt HBTs with a Setback Layerp. 364
Collector Currentp. 365
Base Currentp. 366
Resultsp. 366
HBTs with a Graded Junctionp. 371
Collector Currentp. 373
Base Currentp. 373
Resultsp. 375
Base and Collector Leakage Currentsp. 380
Leakage Current at Emitter-Base Peripheryp. 381
Leakage Current at Base-Collector Peripheryp. 382
Total Base and Collector Currentsp. 382
Double Heterojunction Bipolar Transistorsp. 385
Base-Collector Junction Capacitancep. 386
Offset Voltage of Single and Double HBTsp. 390
Heterojunction Field-Effect Transistorsp. 393
Two-Dimensional Electron Gas at AlGaAs/GaAs Interfacep. 359
Two-Dimensional Electron Gas Mobility and Velocityp. 397
Current-Voltage Characteristics of HFETsp. 398
Problemsp. 401
Referencesp. 403
Solar Cellsp. 407
Basic Conceptp. 408
Air Mass and Spectral Responsep. 408
Short-Circuit Current and Open-Circuit Voltagep. 412
Fill Factor and Conversion Efficiencyp. 414
Homojunction Solar Cellsp. 415
Short-Circuit Current for Si and GaAs Cellsp. 416
Open-Circuit Voltage for Si and GaAs Cellsp. 421
Optimization and Comparison of Si and GaAs Cellsp. 423
Heterojunction Solar Cellsp. 428
Short-Circuit Current and Open-Circuit Voltagep. 428
Results and Optimizationp. 430
Effect of V-Groove Front Surface on Solar Cell Performancep. 437
Fixed Cell Orientationp. 440
Cells on Sun Tracking Structurep. 447
Problemsp. 450
Referencesp. 452
Photoconductive Diodesp. 457
Device Structure and Characteristicsp. 457
General Theoriesp. 462
Conductivity and Currentp. 463
Dark (Light-Off) Statep. 464
Illumination (Light-On) Statep. 466
Effect of Contact Regionsp. 467
Forward-Biased p[superscript +]-i-n[superscript +] Structurep. 468
Reverse-Biased p[superscript +]-i-n[superscript +] Structurep. 468
p[superscript +]-i-p[superscript +] Structurep. 468
Two-Dimensional Analysisp. 472
Light-Off Statep. 473
Light-On Statep. 478
Transient Behavior of Photoconductive Diodesp. 481
Problemsp. 488
Referencesp. 489
About the Authorp. 491
Indexp. 493
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9780890066966
ISBN-10: 0890066965
Series: Electronic Materials & Devices Library
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 520
Published: 1st March 1994
Publisher: Artech House Publishers
Country of Publication: US
Dimensions (cm): 22.9 x 15.2  x 3.3
Weight (kg): 0.93