| Preface | p. xi |
| Semiconductor Device Fundamentals | p. 1 |
| Energy Band Theory | p. 1 |
| Wave-Particle Duality | p. 1 |
| Schrodinger Time-Dependent and Time-Independent Wave Equations | p. 3 |
| Solutions of the Schrodinger Time-Independent Wave Equation | p. 5 |
| Energy Band Theory of Free Carriers | p. 10 |
| Effective Mass Concept | p. 14 |
| Statistics of Free Carriers in Semiconductors | p. 16 |
| Fermi-Dirac Statistics | p. 16 |
| Maxwell-Boltzmann Statistics | p. 17 |
| Free-Carrier Concentration in Semiconductors | p. 18 |
| Temperature Effect on Free Carrier Concentration | p. 21 |
| Generation and Recombination Processes | p. 26 |
| Band-to-Band Recombination | p. 27 |
| Auger Recombination | p. 28 |
| Shockley-Read-Hall Recombination | p. 29 |
| Surface Recombination | p. 31 |
| Boltzmann Transport Equation | p. 31 |
| Drift and Diffusion Mechanisms | p. 32 |
| Carrier Scattering Mechanisms | p. 35 |
| Basic Semiconductor Device Equations | p. 39 |
| Monte Carlo Simulation | p. 41 |
| Problems | p. 49 |
| References | p. 51 |
| Physics and Models Related to p/n Junctions | p. 53 |
| Description of p/n Junction | p. 53 |
| Ambipolar Transport Equation | p. 57 |
| Linvill Lumped Circuit Model | p. 62 |
| Sah Transmission-Line Circuit Model | p. 66 |
| Current and Avalanche Breakdown in Reverse Biased p/n Junctions | p. 68 |
| Current in Reverse-Biased Junctions | p. 68 |
| Avalanche Breakdown in Reverse-Biased Junctions | p. 72 |
| Tunneling Currents in p/n Junctions | p. 76 |
| Reverse-Biased Tunneling Current | p. 76 |
| Forward-Biased Tunneling Current | p. 82 |
| Charge Storage in p/n Junctions | p. 84 |
| Capacitances p/n Junctions | p. 84 |
| Transient Behavior of p/n Junctions | p. 88 |
| Abrupt Heterojunction Diodes | p. 94 |
| Heterojunction Properties | p. 95 |
| Energy Band Discontinuities | p. 97 |
| Abrupt Heterojunctions with Setback Layer | p. 101 |
| Graded Heterojunctions | p. 105 |
| Problems | p. 113 |
| References | p. 115 |
| Bipolar Junction Transistors | p. 119 |
| Steady-State Characteristics under Forward-Active Operation | p. 123 |
| Current-Voltage Characteristics Including Saturation and Current-Induced Base Pushout | p. 125 |
| Base Pushout in Active Mode | p. 129 |
| Base Pushout in Saturation Mode | p. 130 |
| Effect of Quasi-Neutral Base Width Modulation (Early Effect) | p. 138 |
| Effect of Nonuniform Doping Concentration | p. 138 |
| Collector Current | p. 139 |
| Base Current | p. 141 |
| Avalanche Multiplication in BJTs | p. 142 |
| Charge Storage in BJTs | p. 145 |
| Junction Capacitances | p. 145 |
| Diffusion Capacitances | p. 154 |
| Multi-Dimensional Effects | p. 156 |
| Polyemitter Bipolar Transistors | p. 161 |
| Switching Speed of BJTs | p. 167 |
| Large- and Small-Signal Models | p. 173 |
| Problems | p. 178 |
| References | p. 182 |
| Junction Field-Effect Transistors | p. 185 |
| General Theory | p. 185 |
| Current-Voltage Characteristics of Three-Terminal JFETs | p. 189 |
| Saturation Current I[subscript SDS] | p. 189 |
| Channel-Length Modulation Coefficient [lambda] | p. 194 |
| Modeling the Merging Parameter | p. 197 |
| Current-Voltage Characteristics of Four-Terminal JEFTs | p. 198 |
| Modeling the Merging Parameter and Channel-Length Modulation | p. 203 |
| Saturation Current I[subscript SDS] | p. 203 |
| Discussion | p. 204 |
| Short-Channel JFETs | p. 207 |
| Simulation Results | p. 210 |
| Large- and Small-Channel Models | p. 223 |
| Problems | p. 225 |
| References | p. 226 |
| Metal-Oxide-Semiconductor Field-Effect Devices | p. 227 |
| Metal-Oxide-Semiconductor Diodes | p. 228 |
| Surface Potential and Electric Field | p. 232 |
| MOS Capacitance | p. 235 |
| Threshold Voltage of MOS Diode | p. 239 |
| Threshold Voltage Including Flatband Voltage | p. 241 |
| Threshold Voltage Including Body Effect | p. 241 |
| Metal-Oxide-Semiconductor Field-Effect Transistor | p. 242 |
| Threshold Voltage of MOSFET | p. 242 |
| Current-Voltage Characteristics | p. 243 |
| Short-Channel Effect | p. 255 |
| Narrow-Channel Effect | p. 258 |
| The Effects of Short and Narrow Channels on Drain Current | p. 260 |
| Scaling Rule for MOSFET Miniaturization | p. 265 |
| Effects of Nonuniform Doping Profile on I-IV Characteristics | p. 266 |
| Numerical and Experimental Results | p. 268 |
| Hot-Carrier Effects | p. 273 |
| Capacitances of Intrinsic MOSFET | p. 278 |
| MOSFET Equivalent Circuit | p. 282 |
| Problems | p. 283 |
| References | p. 285 |
| Metal-Semiconductor Junction Devices | p. 289 |
| Schottky Diode | p. 289 |
| Basic Concept | p. 289 |
| Barrier Lowering Effect | p. 296 |
| Current-Voltage Characteristics | p. 298 |
| Ohmic Contact | p. 300 |
| Metal-Semiconductor Field-Effect Transistor | p. 300 |
| Simple MESFET Model | p. 304 |
| Improved Model for Submicron MESFETs | p. 306 |
| Two-Dimensional Analysis | p. 318 |
| Large- and Small-Signal Models | p. 325 |
| Problems | p. 330 |
| References | p. 331 |
| Heterojunction Bipolar and Field-Effect Transistors | p. 333 |
| Single Heterojunction Bipolar Transistors | p. 333 |
| Collector Current of Abrupt HBTs | p. 337 |
| Base Current of Abrupt HBTs | p. 340 |
| Base Grading | p. 348 |
| Charge Storage in HBTs | p. 353 |
| Cutoff Frequency of HBTs | p. 357 |
| Abrupt HBTs with a Setback Layer | p. 364 |
| Collector Current | p. 365 |
| Base Current | p. 366 |
| Results | p. 366 |
| HBTs with a Graded Junction | p. 371 |
| Collector Current | p. 373 |
| Base Current | p. 373 |
| Results | p. 375 |
| Base and Collector Leakage Currents | p. 380 |
| Leakage Current at Emitter-Base Periphery | p. 381 |
| Leakage Current at Base-Collector Periphery | p. 382 |
| Total Base and Collector Currents | p. 382 |
| Double Heterojunction Bipolar Transistors | p. 385 |
| Base-Collector Junction Capacitance | p. 386 |
| Offset Voltage of Single and Double HBTs | p. 390 |
| Heterojunction Field-Effect Transistors | p. 393 |
| Two-Dimensional Electron Gas at AlGaAs/GaAs Interface | p. 359 |
| Two-Dimensional Electron Gas Mobility and Velocity | p. 397 |
| Current-Voltage Characteristics of HFETs | p. 398 |
| Problems | p. 401 |
| References | p. 403 |
| Solar Cells | p. 407 |
| Basic Concept | p. 408 |
| Air Mass and Spectral Response | p. 408 |
| Short-Circuit Current and Open-Circuit Voltage | p. 412 |
| Fill Factor and Conversion Efficiency | p. 414 |
| Homojunction Solar Cells | p. 415 |
| Short-Circuit Current for Si and GaAs Cells | p. 416 |
| Open-Circuit Voltage for Si and GaAs Cells | p. 421 |
| Optimization and Comparison of Si and GaAs Cells | p. 423 |
| Heterojunction Solar Cells | p. 428 |
| Short-Circuit Current and Open-Circuit Voltage | p. 428 |
| Results and Optimization | p. 430 |
| Effect of V-Groove Front Surface on Solar Cell Performance | p. 437 |
| Fixed Cell Orientation | p. 440 |
| Cells on Sun Tracking Structure | p. 447 |
| Problems | p. 450 |
| References | p. 452 |
| Photoconductive Diodes | p. 457 |
| Device Structure and Characteristics | p. 457 |
| General Theories | p. 462 |
| Conductivity and Current | p. 463 |
| Dark (Light-Off) State | p. 464 |
| Illumination (Light-On) State | p. 466 |
| Effect of Contact Regions | p. 467 |
| Forward-Biased p[superscript +]-i-n[superscript +] Structure | p. 468 |
| Reverse-Biased p[superscript +]-i-n[superscript +] Structure | p. 468 |
| p[superscript +]-i-p[superscript +] Structure | p. 468 |
| Two-Dimensional Analysis | p. 472 |
| Light-Off State | p. 473 |
| Light-On State | p. 478 |
| Transient Behavior of Photoconductive Diodes | p. 481 |
| Problems | p. 488 |
| References | p. 489 |
| About the Author | p. 491 |
| Index | p. 493 |
| Table of Contents provided by Syndetics. All Rights Reserved. |
