By: Pavel P. Konorov, Adil M. Yafyasov, Vladislav B. Bogevolnov

Hardcover

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This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention.

The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method.

This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.

Preface	p. vii
Abbreviations	p. xi
Introduction	p. xiii
Semiconductor-Electrolyte Interface: Basic Notions and Definitions	p. 1
Semiconductor-Electrolyte Interface under Polarization: Voltage-Current Relationships (Polarization Characteristics)	p. 7
Quasi-Equilibrium Field Effect in Semiconductor-Electrolyte Interfaces: Studies of Surface States	p. 15
Quasi-Equilibrium FESE	p. 15
Surface States Induced by Germanium Surface Oxidation	p. 25
Surface States Arising on Germanium by Metal Adsorption	p. 27
Field Effect in Semiconductor-Electrolyte Interfaces on Nonequilibrium Depletion of Free Charge Carriers from Semiconductor	p. 30
Application of Field Effect in Semiconductor-Electrolyte Interfaces for Studies of Surface Charge Layer Characteristics of Semiconductors and Semimetals	p. 37
Wide-Gap Semiconductors	p. 38
Narrow-Gap Semiconductors	p. 45
Zero-Gap Semiconductors and Semimetals	p. 70
FESE Technique as Applied to Studies of Surfaces of Metal Electrodes and HTSC Materials	p. 82
Processes of Spatial and Temporal Self-Organization in the Semiconductor-Electrolyte System and Their Manifestation in the Field Effect	p. 88
Processes under Polarization	p. 88
Processes under Adsorption	p. 94
Quasi-periodic Oscillations in the Carbon Fiber-Electrolyte System	p. 101
Belousov-Zhabotinsky Reaction	p. 105
Size Quantization in the Semiconductor-Electrolyte System	p. 109
Two-Dimensional Quantum Systems: Theory	p. 109
Two-Dimensional Size Quantization in Semiconductor-Electrolyte Interfaces and Its Manifestation in FESE Experiments	p. 114
One-Dimensional Quantum System: Theory	p. 119
Fabrication of Low-Dimensional Quantum Structures and Their Electronic Properties	p. 121
Technique of FESE Method and Some Possibilities for Its Technological Applications	p. 136
Technique of Quasi-Equilibrium FESE Method	p. 136
Application of FESE for Control of the Impurity Distribution in Semiconductors	p. 140
Method for Determining the Stoichiometric Composition of Solid Solutions	p. 141
FESE Technique for Investigation and Control of Biological Systems	p. 147
Conclusion	p. 153
Bibliography	p. 155
Index	p. 175
Table of Contents provided by Ingram. All Rights Reserved.

ISBN: 9780691121765
ISBN-10: 0691121761
Audience: Tertiary; University or College
Format: Hardcover
Language: English
Number Of Pages: 198
Published: 13th September 2006
Dimensions (cm): 24.0 x 16.5  x 1.8
Weight (kg): 0.486