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This volume from the 2006 MRS Spring Meeting focuses on fundamental materials science and device research for current transistor technologies. Materials scientists come together with silicon technologists and TCAD researchers and activation technologies for integrated circuits, to discuss current achievements research directions.
| Millisecond annealing : past, present and future | p. 3 |
| Ultra shallow junctions optimization with non-doping species co-implantation | p. 15 |
| The carbon co-implant with spike RTA solution for boron extension | p. 21 |
| Germanium and carbon co-implantation for enhanced short channel effect control in PMOS devices | p. 27 |
| The carbon co-implant with spike RTA solution for phosphorus extension | p. 33 |
| Enhanced activation of standard and cocktail spike annealed junctions with additional sub-melt laser anneal | p. 39 |
| Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator | p. 45 |
| Room temperature boron diffusion in amorphous silicon | p. 53 |
| Enhanced antimony activation for ultra-shallow junctions in strained silicon | p. 59 |
| Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices | p. 65 |
| Interaction between low temperatures spacers and source drain extensions and pockets for both NMOS and PMOS of the 65 nm node technology | p. 71 |
| Integration of solid phase epitaxial re-growth, flash and sub-melt laser annealing for S/D junctions in CMOS digital technology | p. 77 |
| Mechanisms for interstitial-mediated transient enhanced diffusion of N-type dopants | p. 91 |
| Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowth | p. 99 |
| Ab-initio study of boron diffusion retardation in Si[subscript 1-x]Ge[subscript x] | p. 105 |
| PN junction formation for high-performance insulated gate bipolar transistors (IGBT); double-pulsed green laser annealing technique | p. 111 |
| Impurity solubility and redistribution due to recrystallization of preamorphized silicon | p. 119 |
| Effect of varying dwell time during non-melt laser annealing of boron implanted silicon | p. 131 |
| Defect evolution during laser annealing | p. 137 |
| The behavior of ion implanted silicon during ultra-high temperature annealing | p. 143 |
| Issues and optimization of millisecond anneal process for 45 nm node and beyond | p. 149 |
| Deactivation of ultra shallow B and BF[subscript 2] profiles after non-melt laser annealing | p. 159 |
| Thermally induced deformation and stresses during millisecond flash lamp annealing | p. 165 |
| Electrical characterization of residual implantation-induced defects in the vicinity of laser-annealed implanted ultrashallow junctions | p. 173 |
| Physical modeling of defects, dopant activation and diffusion in aggressively scaled bulk and SOI devices : atomistic and continuum approaches | p. 179 |
| Modeling and experiments of boron diffusion during sub-millisecond non-melt laser annealing in silicon | p. 191 |
| Accurate sheet resistance measurement on ultra-shallow profiles | p. 197 |
| Analysis and optimization of new implantation and activation mechanisms in ultra shallow junction implants using scanning spreading resistance microscopy (SSRM) | p. 203 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
ISBN: 9781558998681
ISBN-10: 1558998683
Series: MRS Proceedings
Audience:
Professional
Format:
Hardcover
Language:
English
Number Of Pages: 213
Published: 11th October 2006
Publisher: Materials Research Society
Weight (kg): 1.0
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