This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
| Preface: Symposium T | p. xiii |
| Preface: Symposium V | p. xv |
| Materials Research Society Symposium Proceedings | p. xvi |
| Symposium T | |
| Epitaxial Oxide-Silicon Heterostructures I | |
| Epitaxial Si Films Grown on Lattice Matched (La[subscript x]Y[subscript 1-x])O[subscript 3]/Si (111) Structures by Molecular Beam Epitaxy | p. 5 |
| Role of the First Atomic Layers in Epitaxial Relationship and Interface Characteristics of SrTiO[subscript 3] Films on CeO[subscript 2]/YSZ/Si(001) | p. 9 |
| Ferroelectric Thin Films on Silicon I | |
| Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi[subscript 2]Ta[subscript 2]O[subscript 9] Films | p. 17 |
| MFIS and MFS Structures Using SrBi[subscript 2]Ta[subscript 2]O[subscript 9] Thin Films for the FRAM Applications | p. 23 |
| Epitaxial Oxide-Silicon Heterostructures II | |
| Progress in Epitaxial Oxides on Semiconductors | p. 31 |
| Epitaxial Growth and Magnetic Behavior of (Ni,Zn)Fe[subscript 2]O[subscript 4] Thin Films on Si Substrate Using Designed Buffer Layers for Novel Memory Application | p. 43 |
| Ferroelectric Thin Films on Silicon II | |
| Growth, Structure, and Properties of Uniformly a-Axis Oriented Ferroelectric Bi[subscript 3.25]La[subscript 0.75]Ti[subscript 3]O[subscript 12] Thin Films on Si(100) Substrates | p. 51 |
| Recent Progress in Ferroelectic-Gate FETs | p. 61 |
| Integration Processes and Properties of One Transistor Memory Devices | p. 69 |
| X-ray Photoelectron and UV Photoyield Spectroscopic Studies on Structural and Electronic Properties of Sr[subscript x]Bi[subscript y]Ta[subscript 2]O[subscript 9] Films | p. 75 |
| Theory and Modeling | |
| First Principles Modeling of High-k Dielectric Materials | p. 83 |
| First-Principles Study of Electronic and Dielectric Properties of ZrO[subscript 2] and HfO[subscript 2] | p. 93 |
| Atomic Structure, Band Offsets and Hydrogen in High-k Oxide: Silicon Interfaces | p. 99 |
| Oxygen Vacancy Defects in Tantalum Pentoxide: A Density Functional Study | p. 113 |
| Crystalline Oxides for Gate Dielectrics | |
| High-k Gate Dielectrics for Si and Compound Semiconductors by Molecular Beam Epitaxy | p. 121 |
| Physical and Electrical Characterization of Hafnium Silicate Thin Films | p. 133 |
| Dynamic Growth Mechanism and Interface Structure of Crystalline Zirconia on Silicon | p. 139 |
| The Influence of Defects on Compatibility and Yield of the HfO[subscript 2]-PolySilicon Gate Stack for CMOS Integration | p. 145 |
| Crystalline Oxides for Gate Dielectrics II | |
| Improvement of Capacitance-Voltage (C-V) Characteristics of YSZ/Si(001) and ZrO[subscript 2]/Si Thin Film by Nb-Doping | p. 153 |
| A Study of Al[subscript 2]O[subscript 3]:C Films on Si(100) Grown by Low Pressure MOCVD | p. 159 |
| Conduction Mechanisms in SrTiO[subscript 3] Thin Films on Silicon | p. 165 |
| HRTEM Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-k Gate Dielectrics | p. 171 |
| Structural Quality and Electrical Behavior of Epitaxial High-k Y[subscript 2]O[subscript 3]/Si(001) | p. 177 |
| Study of Interface Formation of (Ba,Sr) TiO[subscript 3] Thin Films Grown by rf Sputter Deposition on Bare Si and Thermal SiO[subscript 2]/Si Substrates | p. 183 |
| Symposium V | |
| Transparent Conducting Oxides | |
| The Behavior of Cyclic Voltammetry Stripping (CVs) With Tin-Doped Indium Oxide in 0.3M Hydrochloric Acid | p. 193 |
| Electro-Structural and Film Growth Properties of Room-Temperature Deposited Indium-Tin-Oxide on Polymer Substrates | p. 201 |
| Thin-Film Indium Oxide Doped With Refractory Metals | p. 207 |
| An Angular Dependent X-ray Photoemission Study of Indium-Tin-Oxide Surfaces | p. 213 |
| Transparent Conducting Oxides II and Oxides Growth and Properties | |
| Wide-Gap P-Type Conductive Properties in Layered Oxychalcogenides | p. 223 |
| X-ray Amorphous P-Type Conductive Oxide; ZnRh[subscript 2]O[subscript 4] | p. 235 |
| Co-Doping Deposition of p-Type ZnO Thin Films Using KrF Excimer Laser Ablation | p. 241 |
| Photo-Induced Insulator-Semiconductor Transition in 12CaO-7Al[subscript 2]O[subscript 3] (C12A7) | p. 247 |
| Reactive Solid-Phase Epitaxy--A Novel Growth Method for Single-Crystalline Thin Films of Complex Oxides With Superlattice Structure | p. 257 |
| Fabrication of MISFET Exhibiting Normally-Off Characteristics Using a Single-Crystalline InGaO[subscript 3](ZnO)[subscript 5] Thin Film | p. 267 |
| Field Effect Devices and Gate Dielectrics | |
| Materials Selection for SrTiO[subscript 3]-Based Epitaxial Oxide Field-Effect Devices | p. 275 |
| Photoemission Study of Interfacial Oxidation in ZrO[subscript 2]/Subnanometer SiON[subscript x]/Si(100) Stacked Structures | p. 281 |
| Ferroelectric Field Effect Device | p. 287 |
| The Interactions Between SBT and Transition Metal Studied by DV-X[alpha] Method | p. 293 |
| Ferroelectrics, Capacitors and Sensors | |
| A Comparison of Tunneling Through Thin Oxide Layers on Step-Free and Normal Si Surfaces | p. 301 |
| Recent Development of Al[subscript 2]O[subscript 3]-Based Gas-Sensing Materials | p. 307 |
| Organic Devices | |
| Stability of Indium Tin Oxide/Polymer Interfaces | p. 315 |
| Interfacial Growth Issues | |
| Experimental and Theoretical Studies of the Si(100)/SiO[subscript 2] Interface Formed by Wet and Dry Oxidation | p. 329 |
| SiO[subscript 2] Formation at the Aluminum Oxide/Si(100) Interface | p. 335 |
| Role of Ambience on the Diffusion of Charge Carriers in the TiO[subscript 2] Layers Investigated by the Photovoltage Technique | p. 341 |
| A Structural Study of the Amorphous to Crystalline Transformation in In[subscript 2]O[subscript 3] Thin Films | p. 347 |
| Engineering ZnO/GaN Interfaces for Tunneling Ohmic Contacts to GaN | p. 353 |
| Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuOS | p. 359 |
| Growth and Characteristics of Single Crystals of Lithium Niobate | p. 365 |
| Author Index | p. 371 |
| Subject Index | p. 375 |
| Table of Contents provided by Ingram. All Rights Reserved. |
ISBN: 9781558996847
ISBN-10: 1558996842
Series: MRS Proceedings
Audience:
General
Format:
Hardcover
Language:
English
Number Of Pages: 376
Published: 23rd June 2003
Publisher: Materials Research Society
Weight (kg): 1.0