By: R. W. Birkmire (Editor), S. A. Carter (Editor), D. S. Ginley (Editor)

Hardcover

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This book covers a wide range of issues regarding interfaces in optoelectronic devices. Key is that in many emerging device structures a new level of control is needed to ensure the quality and nature of the interface. In addition, new device structures are emerging that combine unique types of materials where the interfacial science is new. Thus, the interfaces between electroactive polymers and inorganic semiconductors or oxides are just beginning to be understood. The papers in this book represent a snapshot of current in this critical area of interfacial science. The need to integrate organic, inorganic and nanostructured materials on varying length scales represents a significant challenge for the future and will be a key area of materials science. Topics include: interfaces with organic materials; interfaces with semiconductor materials; interfaces with transparent conducting oxides; and interfaces with novel optoelectronic materials.

Preface	p. ix
Materials Research Society Symposium Proceedings	p. x
Interfaces with Organic Materials
Enhancement of Photoelectric Effect in Organic Dye Thin Film Cells by Surface Plasmon Excitation	p. 3
The Organic/Inorganic Interface in Micro and Nano Composite Materials	p. 9
Solvent Processible Composite Carbon Nanotube Cathode for Polymer LED Applications	p. 19
Interfaces with Semiconductor Materials
Role of Interface Quality and Film Doping Density in Amorphous Si/Crystalline Si Heterojunctions for Photovoltaic Applications	p. 27
Transport Limiting Mechanisms of Amorphous (a-Si:H) and Microcrystalline(mc-Si:H) Thin Film Heterostructures for Photovoltaic Application	p. 33
Position Control of Nucleation in Solid-Phase Crystallization of a-Si/SiO[subscript 2] by Ge Layer Insertion	p. 39
Effects of Film Interfaces on the Properties of Poly-Si Grown by the Metal-Induced Technique for Solar Cell Applications	p. 45
The Fabrication of p-Ge/n-Si Photodetectors, Compatible With Back-End Si CMOS Processing, by Low Temperature ([less than sign] 400 [degree]C) Molecular Beam Epitaxy and Electron-Beam Evaporation	p. 51
Strain Modulation of [beta]-FeSi[subscript 2] by Ge-Segregation in Solid-Phase Growth of [a-Si/a-FeSiGe subscript n] Multi-Layer	p. 57
Low Resistivity Boron Doped Amorphous Silicon-Germanium Alloy Films Obtained With a Low Frequency Plasma	p. 63
Engineering CuInGaSSe[subscript 2] Surface Properties to Enhance Device Performance	p. 69
Study of ZnTe:Cu/Metal Interfaces in CdS/CdTe Phovoltaic Solar Cells	p. 79
Interfaces with Transparent Conducting Oxides
Electrical and Photonic Functions in Transparent Oxide Semiconductors: Utilization of Built-in Nanostructure	p. 87
Transparent Transistor Development	p. 99
Preparation of Oxygen Ion Conducting Doped Lanthanum Gallate Thin Films on Amorphous and Single Crystal Substrates by Pulsed Laser Deposition	p. 105
Surface Electronic Structure of Nitric-Oxide-Treated Indium Tin Oxide	p. 111
Interfaces with Novel Opto-Electronic Materials
Electrical Properties of [beta]-FeSi[subscript 2] Thin Films on Insulating Substrates	p. 121
Emission of Rare Earth Ions Incorporated Into Metal Oxide Thin Films and Fibers	p. 127
Photochemical Bonding of Fluorocarbon and Fused Silica Glass for Ultraviolet Ray Transmitting	p. 133
Correlations Between Conditions of Synthesis, Phase Composition and Luminescent Properties of Eu-Polytantalate	p. 139
Assembly of CdSe/CdS Quantum Dots on Au Surfaces for Photoreception	p. 145
A Coupled Cellular Automata Representation of Nanoscale Transport Across Semiconductor Interfaces	p. 151
Author Index	p. 163
Subject Index	p. 165
Table of Contents provided by Rittenhouse. All Rights Reserved.

ISBN: 9781558997349
ISBN-10: 1558997342
Series: MRS Proceedings
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 165
Published: 9th April 2004
Publisher: Materials Research Society
Weight (kg): 1.0