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This book brings together for the first time a review of the theory behind single-electronics, a state-of-the-art description of simulation methods for single-electron devices and circuits, and a comprehensive discussion of a wide selection of applications ranging from logic and memory to metrology. The author shares his almost a decade-long experience in single-electronics. Attention is given to open challenges such as the random background charge problem, where old and new ideas are presented to overcome it.Many simulation methods described in this book are not particular to single-electronics. The efficient calculation of capacitances, tunnel rates, and bound energy states have applications in many other fields. This book is written with the practical side in mind. Simulation methods are described in a manner which makes their implementation straight forward.
"This is a well written book offering a clear and detailed insight into physical processes and numerical procedures essential to the single-electron dynamics in electro-conducting media. The subject of the book is a rapidly developing scientific field which is interesting not only from a purely theoretical point of view but also attracts attention due to a variety of application possibilities in contemporary micro-electronics. The book may be useful both to students as a textbook, and to a more general scientific community dealing with problems involving a single electron dynamics in solids ..." Zentralblatt fur Mathematik und ihre Grenzgebiete Vol. 1013/No. 13/2003
| Introduction | p. 1 |
| Single-Electronics Made Easy | p. 1 |
| A Historical Look Back | p. 5 |
| Theory | p. 9 |
| Orthodox Single-Electron Theory | p. 9 |
| Time and Space Correlations | p. 18 |
| Master Equation of Electron Transport | p. 19 |
| Extensions to the Orthodox Theory | p. 22 |
| Simulation Methods and Numerical Algorithms | p. 48 |
| Monte Carlo Method | p. 48 |
| Solution of the Master Equation | p. 67 |
| Coupling with SPICE | p. 77 |
| Free Energy | p. 79 |
| Tunnel Transmission Coefficient | p. 85 |
| Energy Levels | p. 110 |
| Evaluation Schemes for Cotunneling | p. 116 |
| Rate Calculation Including Electromagnetic Environment | p. 117 |
| Numerical Integration of Tunnel Rates | p. 121 |
| Time-Dependent Node Voltages and Node Charges | p. 122 |
| Stability Diagram and Stable States | p. 123 |
| Capacitance Calculations | p. 126 |
| Circuits and Applications | p. 147 |
| Fundamental Circuits | p. 147 |
| Metrology Applications | p. 161 |
| Memory | p. 167 |
| Logic | p. 183 |
| Interfacing to CMOS | p. 202 |
| Exotic Circuits | p. 202 |
| Evolutionary Circuit Design | p. 213 |
| Random Background Charges | p. 217 |
| The Good Side of High Charge Sensitivity | p. 218 |
| Solutions on the Material Level | p. 219 |
| Solutions on the Device Level | p. 220 |
| Solutions on the Circuit and System Level | p. 225 |
| Manufacturing Methods and Material Systems | p. 226 |
| Shadow Evaporation | p. 227 |
| Step-Edge Cutoff | p. 228 |
| Nanoimprint | p. 230 |
| Planar Quantum Dots | p. 231 |
| Scanning Probe Microscopy | p. 231 |
| Granular Films | p. 232 |
| Self-Assembled Structures | p. 233 |
| Outlook | p. 233 |
| Fermi's Golden Rule | p. 235 |
| Capacitance and Resistance Extraction from Measured Data | p. 237 |
| Analytic Solutions of the Cotunneling Rate | p. 238 |
| Algorithms from Number Theory | p. 246 |
| Convex Hull of Point Set | p. 248 |
| Analytic Capacitance Calculation | p. 248 |
| References | p. 257 |
| Subject Index | p. 275 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
ISBN: 9783211835586
ISBN-10: 321183558X
Series: Computational Microelectronics
Audience:
Professional
Format:
Hardcover
Language:
English
Number Of Pages: 290
Published: July 2001
Publisher: SPRINGER VERLAG GMBH
Dimensions (cm): 23.5 x 15.5
Weight (kg): 0.672