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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
| Preface | |
| Acknowledgments | |
| Materials Research Society Symposium Proceedings | |
| Science Issues Related to Wafer Cleaning in Silicon Technology | p. 3 |
| In Situ Control of Native Oxide Growth for Semi-Conductor Processes | p. 19 |
| Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH[subscript 4]F Treated Si(111) Surfaces | p. 31 |
| In-Situ Low Temperature Cleaning and Passivation of Silicon by Remote Hydrogen Plasma for Silicon-Based Epitaxy | p. 43 |
| Surface Conditioning Issues Related to Patterning and Etching | p. 55 |
| A New Two-Step Plasma-Assisted Surface Cleaning-Oxidation and Film-Deposition Process Sequence for the Formation of Si (100)/SiO[subscript 2] Interfaces With Low Densities of Interfacial Traps | p. 69 |
| Surface Cleaning Prior to Formation of Si/SiO[subscript 2] Interfaces by Remote Plasma-Enhanced Chemical Vapor Deposition (RPECVD) | p. 75 |
| Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and Rapid Thermal Chemical Vapor Deposition Oxide | p. 81 |
| Silicon Surface Morphology and the Reaction of Silicon With Oxygen | p. 87 |
| Pre-Oxidation Anneal Kinetics: Interface Degradation of Thin SiO[subscript 2] Films on Silicon | p. 93 |
| Effects of Hydrogen Coverage on Silicon Surface Reactivity | p. 99 |
| Cleaning Procedures for UHV Cluster-Tool MOS Fabrication | p. 105 |
| Chemical Structure of Native Oxide Grown on Hydrogen-Terminated Silicon Surfaces | p. 113 |
| HF/Ethanol Preoxidation Silicon Cleaning: Analysis of the Silicon Surface and of the Ultra-Thin Oxide Layer | p. 119 |
| Pre-Oxidation Silicon Cleaning and Its Relation to MOS Reliability and Process-Induced Damage | p. 125 |
| Ion Channeling and Spectroscopic Ellipsometry Examinations of Thin-Film SiO[subscript 2]/EPI-Si(001) Structures | p. 131 |
| Surface Cleaning and passivation for the Growth of Si/Oxide/Si Structures | p. 137 |
| A Correlation Between Si Surface Micro-Roughness and Atomic Concentration on Surface: Application to Micro-Rougness Measurement of Si | p. 143 |
| Si Surface Preparation: The Effect of Small Amounts of Carbon Contamination and Sputter Induced Surface Roughness | p. 149 |
| Spectroscopic Ellipsometric Analysis of Surface and Sub-Surface Damage in Chemical-Mechanical Polished Semi-Conductors | p. 155 |
| Crystal Originated Singularities on Silicon Wafers After SC1 Cleaning | p. 161 |
| VPD/SIMS Measurement of Surface Al on Silicon Substrates | p. 167 |
| TXRF Characterization of Trace Metal Contamination in Thin Gate Oxides | p. 173 |
| In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors | p. 179 |
| KOH-Etch Related Defects on Processed Silicon Wafers | p. 187 |
| Photo-Excited Cleaning of Silicon With Chlorine and Fluorine | p. 195 |
| Kinetics of UV/O[subscript 2] Cleaning and Surface Passivation: Experiments and Modeling | p. 207 |
| Plasma-Surface Interaction Limits for Remote H-Plasma Cleaning of Si(100) | p. 213 |
| Characteristics and Recovery of Si Surfaces Plasma Etching in CHF[subscript 3]/C[subscript 2]F[subscript 6] | p. 219 |
| Surface Stability and Flow Characteristics of BPSG Film by N20 Plasma Treatment | p. 225 |
| Detection of Thin Interfacial Layers by Picosecond Ultrasonics | p. 231 |
| Surface Electronic States of Low Temperature H-Plasma Cleaned Si(100) and Ge(100) Surfaces | p. 237 |
| Silicon Surface Cleaning by a Plasma in Afterglow | p. 243 |
| Single Step Low Temperature In-Situ Substrate Cleaning for Silicon Processing | p. 249 |
| Comparison Between Air and UV/Ozone Surfaces Passivation Methods of GaAs (100) Substrates | p. 255 |
| Double Beam Photoconductivity Modulation System and Its Application to the Characterization of a Process of Photoresist Removal | p. 261 |
| Analysis of Plasma Order Oxidised Hg[subscript 1-x]Cd[subscript x]Te Surfaces | p. 269 |
| The Wet Etching of CdZnTe Substrates for OMVPE Growth | p. 275 |
| Sulfidation and Post-Sulfidation Reactions on Gallium Arsenide | p. 281 |
| The Passivation of Gallium Arsenide Surfaces With Selenium from Gaseous Sources | p. 287 |
| S-Passivated InP Surfaces Prepared by (NH subscript 4)(subscript 2)S Treatments | p. 293 |
| Structure of Sulphur-Passivated InP(100)-(1x1) Surface | p. 299 |
| MOCVD Growth of GaAs on Si With Low Temperature Preheating Process | p. 305 |
| Improvement in the Activation Efficiency of Implanted Si in GaAs Using Oxygen Plasma Pretreatment | p. 311 |
| Study of the Surface Cleaning Effects to the InGaAs Quantum Well Wires by Atomic Force Microscopy and Photoluminescence Spectroscopy | p. 317 |
| SHG(Second Harmonic Generation) in Reflection from GaAs Surfaces During Sulfur Passivation and Photos Chemical Washing Processes | p. 323 |
| Surface Contamination Level of GaAs Wafers Treated With Solutions of Organic Base Measured by Total Reflection X-Ray Fluorescence (TXRF) | p. 329 |
| Surface Characterization of Chemical-Mechanical Polished GaAs by Inclined Bragg Plane Triple Crystal X-Ray Diffraction | p. 335 |
| Texturing of InP Surfaces for Device Applications | p. 341 |
| Etching of Silicon (111) and (100) Surfaces in HF Solutions: H-Termination, Atomic Structure and Overall Morphology | p. 349 |
| Vapor Phase Cleaning of Silicon Wafers | p. 361 |
| First-Principles Investigations of Hydrogen and Fluorine on Silicon Surfaces | p. 375 |
| Cleaning and Oxidation of Heavily Doped Si Surfaces | p. 385 |
| Surface Characterisation of Si After HF Treatments and Its Influence on the Dielectric Breakdown of Thermal Oxides | p. 391 |
| Interaction of Metallic Impurities Adsorbed on Si Wafers in SC1 Solution | p. 399 |
| The Effect of Dopant Concentration on the Native Oxide Growth on Silicon Wafer Surface | p. 405 |
| Scanning Tunneling Microscopy of HF-Controlled Si(111) Surfaces | p. 409 |
| Porous Amorphous Si Formation by the Etching of Single Crystal Si Substrates | p. 415 |
| A Photoemission Study of Electrochemically Etched Light Emitting Silicon | p. 421 |
| Characterization of HF Treated (100) Si Surfaces by Surface Charge Analysis (SCA) | p. 427 |
| Use of Dilute, Aqueous HF for Selective Etching | p. 433 |
| Si MBE on H-Passivated Si(100) | p. 439 |
| Low Temperature Epitaxy on H-Passivated Si(100) by Sputter Deposition | p. 443 |
| In Situ Analysis of Surface Contaminant Desorption During Low-Temperature Silicon Substrate Cleaning Using Reflection Electron Energy Loss Spectrometry | p. 449 |
| Photoemission Study of the Si,Ge Epitaxial Growth Process Using Surfactants | p. 455 |
| Optimization of Si-Wafer Cleaning and the Use of Buffer-Layers for Epitaxial Growth of SiGe-Layers by VLPCVD at T = 650 C | p. 461 |
| The Dependence of Etch Pit Density on the Interfacial Oxygen Levels in Thin Silicon Layers Grown by Ultra High Vacuum Chemical Vapor Deposition | p. 467 |
| Room-Temperature HF Vapour-Phase Cleaning for LPCVD EPI of Si and SiGe | p. 473 |
| Vapor HF Etching for Low Temperature Silicon Epitaxy | p. 479 |
| A Complementary Wafer Cleaning and Growth Process for Low Temperature, Defect Free, Selective Silicon Epitaxy | p. 487 |
| Novel Doping Process for Ultra-Shallow Junction: Rapid Vapor-Phase Direct Doping (RVD) | p. 493 |
| NH[subscript 4]F Pre-Cleaning of Silicon (100) for UHV-CVD Epitaxy | p. 499 |
| Antimony as a Passivant of Si(111) in the Si(111) ([actual symbol not reproducible])-Sb System | p. 505 |
| Characterization of SiGe Epitaxial Films Using Ellipsometry and X-Ray Fluorescence | p. 511 |
| Selectivity Mechanisms in Low Temperature ([950[degree]C) Selective Silicon Epitaxy | p. 517 |
| Author Index | p. 523 |
| Subject Index | p. 527 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
ISBN: 9781558991545
ISBN-10: 1558991549
Series: MRS Proceedings
Audience:
Professional
Format:
Hardcover
Language:
English
Published: 3rd November 1992
Publisher: Materials Research Society
Dimensions (cm): 23.4 x 15.7
x 3.6
Weight (kg): 0.93
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