1300 187 187
This volume from MRS provides an international forum for the exchange of ideas and discussions on the latest developments in beam-based synthesis and characterization. Materials of interest span the spectrum of technological materials. Beam-based synthesis and/or characterization of materials in bulk form, as thin films, or adsorbate layers, are addressed.
| Preface | |
| Materials Research Society Symposium Proceedings | |
| Depth of Origin of Secondary Ions: Suppression and Enhancement of Ions upon Passage through Overlayers | p. 3 |
| Niobium Nitrite Thin Films Deposition Using Radical Beam Assisted Deposition | p. 9 |
| Ion Mixing of Pulsed Laser Deposited Hydroxylapatite (HA) | p. 15 |
| Atomic Transport by Ion Beam Mixing in the Radiation Enhanced Diffusion Region | p. 21 |
| Implantation of Metal Ions into High Speed Steel for Improved Tribology | p. 27 |
| Residual Deformations Induced by the Thermal Shock during Pulsed Ion Implantation | p. 33 |
| Elasticity Shear Modulus Modification by Impulsive Ion Implantation | p. 39 |
| Microstructure Evolution during Ion Beam Assisted Deposition | p. 45 |
| Equal Thickness Contours of Films Deposited on Inclined Substrates by Evaporation and Ion Beam Assisted Deposition | p. 57 |
| Uniform and Large Area Deposition of Diamond-Like Carbon Using RF Source Ion Beam | p. 63 |
| Composition and Phase Control for Molybdenum Nitride Thin Films | p. 69 |
| In-Situ Ellipsometry Study of Ion Bombardment Effects on Low Temperature Si Epitaxy by dc Magnetron Sputtering | p. 75 |
| Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition | p. 81 |
| Characterization and Performance of Carbon Films Deposited by Plasma and Ion Beam Based Techniques | p. 87 |
| C[subscript x]N[subscript 1-x] Thin Films Prepared by Mass Separated Ion Beam Deposition | p. 93 |
| Negative-Ion Implantation | p. 99 |
| Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation | p. 111 |
| Formation of Silicon on Insulator (SOI) with Separation by Plasma Implantation of Oxygen (SPIMOX) | p. 117 |
| Application of MeV Ion Implantation in Semiconductor Device Manufacturing | p. 123 |
| Suppression of Ion-Induced Charge Collection by High-Energy B[superscript +]-Implanted Layer | p. 135 |
| Erbium Doping of Silicon and Silicon Carbide Using Ion Beam Induced Epitaxial Crystallization | p. 141 |
| Luminescence during Tb-Ion Implantation into Sapphire | p. 147 |
| Linear and Nonlinear Optical Properties of Metal Nanocluster-Silica Composites Formed by Sequential Implantation of Ag and Cu | p. 153 |
| Diffusion of Implanted Dopants and Isolation Species in III-V Nitrides | p. 159 |
| Low Energy Ion Irradiation Effect on Electron Transport in GaAs/AlGaAs Heterostructures | p. 165 |
| keV- and MeV-Ion Bean Synthesis of Buried SiC Layers in Silicon | p. 171 |
| Ion Beam Synthesis by Tungsten-Implantation into 6H-SiC | p. 177 |
| Nucleation, Growth and Ostwald Ripening of CoSi, Precipitates during Co Ion Implantation in Si | p. 183 |
| Platinum Ion Implantation into Single Crystal Zirconia with a Carbon Sacrificial Layer on the Surface | p. 189 |
| Synthesis and Characterization of a Metastable (SiC)[subscript 3]N[subscript 4] Phase | p. 195 |
| Spreading Resistance Profiling Study of GeSi/Si Structures by High Dose Ge Implantation into Si | p. 201 |
| Oxidation of Silicon Implanted with High-Dose Aluminum | p. 207 |
| Characterization of Si Implantation and Annealing of InP by Raman Spectroscopy | p. 213 |
| Damage and Lattice Strain in Ion-Irradiated Al[subscript x]Ga[subscript 1-x]As | p. 219 |
| SiC[subscript x] Layers on Diamond by Si Implantation for Protection against High Temperature Oxidation | p. 225 |
| Ion Beam Synthesis of Silicon Carbide Infra-Red and RBS Studies | p. 231 |
| Atom Penetration from a Thin Film into the Substrates during Sputtering by Polyenergetic Ar[superscript +] Ion Beam with Mean Energy of 9.4 keV | p. 237 |
| Study of Titanium Nitrides Synthesized by High Dose Ion Implantation | p. 243 |
| Effect of Titanium Implantation on the Mechanical Properties of Silicon Nitride | p. 249 |
| Defect Trapping and Precipitation Processes during Annealing of Cu and Au Implanted Si | p. 255 |
| Formation of Excess Donors during High-Dose [superscript 74]Ge[superscript +] Ion Implantation | p. 261 |
| Coherent V[subscript 2]O[subscript 3] Precipitates in a-Al[subscript 2]O[subscript 3] Co-implanted with Vanadium and Oxygen | p. 269 |
| Anomalous Diffusion of Implanted Chlorine in Silicon | p. 275 |
| Effects of Implantation Temperature on the Structure, Composition and Oxidation Resistance of SiC | p. 281 |
| Effect of Oxygen Implantation on the Electrochemical Properties of Palladium | p. 287 |
| A Study of Loop Evolution during Inert Ambient Annealing and Reaction between Point Defects and Dislocation Loops during Oxidation of Silicon | p. 293 |
| Defect Formation by Single Ion Impacts on Highly Oriented Pyrolytic Graphite Observed by Scanning Tunneling Microscopy | p. 301 |
| Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon | p. 307 |
| Boron Enhanced Diffusion due to High Energy Ion-Implantation and its Suppression by Using RTA Process | p. 319 |
| Defects Related to Electrical-Leakage in TMOS Structures | p. 325 |
| Thermal Stability Study of Oxygen Implanted AlGaAs/GaAs Single Quantum Well Structures Using Photoreflectance | p. 331 |
| Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature | p. 337 |
| Improving Wettability of Polymethylmethacrylate by Ar[superscript +] Ion Irradiation in Oxygen Environment | p. 345 |
| A New Approach to Microporous Materials - Application of Ion Beam Technology to Polyimides Membrane | p. 351 |
| Ion Irradiated Polystyrene: Transport and Hardness Measurements | p. 357 |
| Depth-Dependent Hardness Improvements in Ion Irradiated Polystyrene | p. 363 |
| Raman Spectroscopic Study of Ag-, W- and Pd-Ions Implanted Polyimide Films | p. 369 |
| Total Reflection X-ray Fluorescence (TXRF) | p. 377 |
| Trace Contamination Measurements Using Heavy Ion Backscattering Spectrometry | p. 389 |
| Improved Near Surface Heavy Impurity Detection by a Novel Charged Particle Energy Filter Technique | p. 399 |
| Contamination Monitoring Using Surface Photovoltage and Application to Process Line Control | p. 405 |
| Neutron Depth Profiling by Large Angle Coincidence Spectroscopy | p. 419 |
| Stebic Revisited | p. 425 |
| Mass Spectrometric Studies of Pulsed Laser Ablation: Existence of Rydberg State Atoms | p. 431 |
| The Characterisation of the Compositional and Electronic Profiles of Delta-Doped Layers Using Transmission Electron Microscopy | p. 437 |
| Observation of Semiconductor Superstructures with Backscattered Electrons in a Scanning Electron Microscopy | p. 443 |
| High Resolution TEM Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces | p. 449 |
| Structural Differences between CVD and Thermally Grown Amorphous SiO[subscript 2] | p. 455 |
| Strain Measurements of SiGeC Heteroepitaxial Layers on Si(100) Using Ion Beam Analysis | p. 461 |
| Backside SIMS Study of Ge/Pd Non-Alloyed Ohmic Contacts on InGaAs | p. 471 |
| Monitoring of the Early Stages of Thin Film Growth by the Generation from Second Harmonic Radiation of Supported Metal Particles | p. 477 |
| Real-Time Monitoring for Laser Surface Cleaning | p. 483 |
| EXAFS Studies of the Difference in Local Structure of Various Tantalum Oxide Capacitor Films | p. 489 |
| Quantifying the Effects of Amorphous Layers on Image Contrast Using Energy Filtered Transmission Electron Microscopy | p. 495 |
| Directional Sputter Deposition for Semiconductor Applications | p. 503 |
| Structure-Property Relationship of Ion-Beam Sputtered Nd-Fe-B Magnetic Thin Films on (111) Silicon | p. 511 |
| Modelling of Multi-Ion-Beam Reactive Cosputtering for Metal Oxide Thin Films | p. 517 |
| Correlation of Roughness, Impurity, Infra-Red Emissivity and Sputter Conditions for Aluminum Films | p. 523 |
| Ion Beam Sputter Deposition of Refractory Metal Oxides | p. 529 |
| Degradation in EUV Reflectance of Ion-Sputtered SiC Films | p. 535 |
| Photochemical Dynamics on Semiconductor Surfaces | p. 543 |
| Effect of Surface Roughness on Surface Photochemistry | p. 555 |
| Chemistry and Deposition Driven by Monoenergetic Synchrotron Radiation: Initial Studies of Condensed Silanes and Water on Noble Metals | p. 561 |
| UV Laser Deposition of Thin Films at 248 NM for Phase Shifting Mask Repair | p. 565 |
| Copper Metallization of Polyimide Film by Excimer Laser Irradiation and Electrodeposition | p. 571 |
| Gamma Ray Processing of ZaGeP[subscript 2]: A Nonlinear Optical Material for the Infrared | p. 579 |
| Si[subscript 1-x]Ge[subscript x]C[subscript y] Film Formation by Pulsed Excimer Laser Crystallization of Heavily Ge and C Implanted Silicon | p. 585 |
| Laser-Ablated Particles from Porous Silicon | p. 591 |
| Laser-Modified Chemical Beam Epitaxy of InGaAs/GaAs Multiple Quantum Wells Using Tris-Dimethylaminoarsenic | p. 597 |
| Morphology and Microstructure of (111) Crystalline CeO[subscript 2] Films Grown on Amorphous SiO[subscript 2] Substrates by Pulsed-Laser Ablation | p. 603 |
| Ion-Assisted Pulsed Laser Deposition of Amorphous Tetrahedral-Coordinated Carbon Films | p. 609 |
| Deposition of Diamond-Like Carbon (DLC) with Picosecond Laser Pulses | p. 615 |
| Laser Assisted Molecular Beam Deposition of Thin Films of Polymeric Copperphthalocyanine and their Characterization | p. 621 |
| Fabrication and Modification of Metal Nanocluster Composites Using Ion and Laser Beams | p. 629 |
| TEM Observation of the Damages in Heavily Ion-Implanted Fine Si Columns | p. 641 |
| Characteristics of Excimer-Laser-Crystallized Polysilicon Films by Line Beam Scanning Method | p. 647 |
| Germanium Partitioning and Interface Stability during Rapid Soidification of GeSi Alloys | p. 653 |
| Study of WSi[subscript 2] and CoSi[subscript 2] Thin Films Deposited by Laser Ablation | p. 659 |
| Studies of CN[subscript x] Films Deposited by Ion-Beam-Assisted Laser Ablation of Graphite | p. 665 |
| Flat-Top Polygonal Temperature Profiles by Laser Beams | p. 669 |
| Modeling of Thermal, Electronic, Hydrodynamic, and Dynamic Deposition Processes for Pulsed-Laser Deposition of Thin Films | p. 675 |
| A Numerical Simulation of Pulsed Laser Deposition | p. 681 |
| Microraman Study of Laser Ablated GaAs | p. 687 |
| A Comparative Study of Pulsed Laser and Electron Beam Irradiation Effects in Fe[subscript 81]B[subscript 13.5]Si[subscript 3.5]C[subscript 2] Glass | p. 693 |
| Ion-Beam Polishing of Diamond Thin Films | p. 699 |
| Some Insights into the Process of E-Beam Generation of Metal Nanoparticles from Binary Metal Hydride and Azide Precursors | p. 705 |
| Electron Beam Assisted Etching of Single Crystal Diamond Chips | p. 711 |
| Hydrogen Ion Beam Processing of Single Crystal Diamond Chips | p. 717 |
| Sintering of Textured YBa[subscript 2]Cu[subscript 3]O[subscript 7-x] Under Intensive [superscript 60]Co Gamma Irradiation | p. 723 |
| Electron Beam Processing of ZnGeP[subscript 2]: A Nonlinear Optical Material for the Infrared | p. 729 |
| EPR Studies of E-Beam and Gamma Irradiated ZnGeP[subscript 2]: A Nonlinear Optical Material for the Infrared | p. 735 |
| Author Index | p. 741 |
| Subject Index | p. 745 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
ISBN: 9781558992559
ISBN-10: 1558992553
Series: Material Research Society Symposium Proceedings
Audience:
Professional
Format:
Hardcover
Language:
English
Number Of Pages: 746
Published: 20th November 1995
Publisher: CAMBRIDGE UNIV PR
Dimensions (cm): 23.368 x 16.51
x 4.318
Weight (kg): 1.179
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