By: H. M. Branz (Editor), R. W. Collins (Editor), M. Stutzmann (Editor), Subhendu Guha (Editor), Hiroaki Okamoto (Editor)

Hardcover

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This book provides an international forum to exchange research results on topics ranging from silicon thin-film physics and chemistry, to novel device design and engineering. It covers all aspects of hydrogenated amorphous silicon (a-Si:H) science and technology, and is the fourth consecutive volume in the series to cover heterogeneous silicon film materials, including the nanocrystalline, microcrystalline, and polycrystalline films. A special 'Millennium Session' celebrating the most important achievements of the last three decades in the field of amorphous and microcrystalline silicon thins films, is featured. Topics include: amorphous film growth and properties; nanocrystalline/microcrystalline film growth and properties; ordering, ordering transitions and photocrystalline films: polycrystalline films, epitaxial growth and properties; catalytic/hot-wire CVD - amorphous to polycrystalline films; implantation, annealing and crystallization; structure and hydrogen; band, band tails and defect states; metastability and equilibration; thin-film transistors, displays and imagers; thin-film solar cells and solar-cell structures; amorphous silicon detectors and other devices; and heterogeneous silicon transport and device applications.

Preface	p. xxiii
Materials Research Society Symposium Proceedings	p. xxvi
The Millennium Session
Early Research On Amorphous Silicon: Errors And Missed Opportunities	p. A17.1
40 Years Trajectory Of Amorphous Semiconductor Research	p. A17.2
A European Adventure In Amorphous Materials: From Past To Future	p. A17.3
Amorphous Film Growth and Properties
Growth Processes Of Hydrogenated Amorphous Silicon	p. A1.4
Surface Microchemical Reactions During Hydrogenated Silicon Growth Studied By In-Situ ESR Technique	p. A1.1
Methods Of Suppressing Cluster Growth In Silane RF Discharges	p. A5.6
Fast Growth Of Amorphous Silicon Layers By Amplitude Modulation PECVD	p. A4.1
Comparison Of Structural Properties And Solar Cell Performance Of a-Si:H Films Prepared At Various Deposition Rates Using 13.56 And 70 MHz PECVD Methods	p. A7.4
Relation Between Growth Precursors And Film Properties For Plasma Deposition Of a-Si:H At Rates Up To 100 A/s	p. A4.2
Surface Roughness Evolution Of a-Si:H Growth And Its Relation To The Growth Mechanism	p. A7.6
Molecular Beam Epitaxially Deposited Amorphous Silicon	p. A5.1
Wide Bandgap [greater than or equal]1.8e V Amorphous Silicon For Solar Multijunction Cell And Image Sensor Applications	p. A5.2
Silicon-Carbon Alloys Synthesized By Electron Cyclotron Resonance Chemical Vapor Deposition	p. A23.2
Low Gap Amorphous (Si,Ge) Solar Cells	p. A15.3
Nanocrystalline/Microcrystalline Film Growth and Properties
Thermal Oxidation Of Si Nanoparticles Grown By Plasma-Enhanced CVD	p. A5.11
Real Time Optics Of p-Type Microcrystalline Silicon Deposition On Sppecular and Textured ZnO-Coated Glass	p. A19.6
Improved Crystallinity Of Microcrystalline Silicon Films Using Deuterium Dilution	p. A19.5
Comparison Of Low Temperature Growth Of Si Thin Films On Amorphous Substrates By MBE And PECVD Methods	p. A19.4
In-Situ Mass Spectroscopy Of ECR Silane Plasmas For Amorphous And Microcrystalline Silicon Growth	p. A5.4
Solar-Cell Suitable [mu]c-Si Films Grown By ECR-CVD	p. A5.5
Fast Deposition Of Microcrystalline Silicon Films Using The High-Density Microwave Plasma Utilizing A Spokewise Antenna	p. A4.4
Ordering, Ordering Transitions, and Protocrystalline Films
Nucleation Mechanism Of Microcrystalline Silicon Studied By Real Time Spectroscopic Ellipsometry And Infrared Spectroscopy	p. A2.1
Topological Signatures of Medium Range Order in Amorphous Semiconductor Models	p. A2.5
Comparative Fluctuation Microscopy Study Of Medium-Range Order In Hydrogenated Amorphous Silicon Deposited By Various Methods	p. A2.4
Microstructural Control Of Thin Film Si Using Low Energy, High Flux Ions In Reactive Magnetron Sputter Deposition	p. A5.3
Study Of The Amorphous-To-Microcrystalline Transition During Silicon Film Growth At Increased Rates: Extensions Of The Evolutionary Phase Diagram	p. A2.2
Structure Of Si:H Films Fabricated By Plasma-Enhanced CVD Using Hydrogen Diluted Plasma	p. A5.8
Thickness And Interface Layer Effects On The Amorphous Silicon Film Property Studied By Various Photoluminescence Excitation Wavelengths	p. A5.9
Device Quality Silicon Carbon Thin Films	p. A23.3
Kinetics Of Light Induced Changes In Protocrystalline Thin Film Materials And Solar Cells	p. A15.5
Protocrystalline Growth Of Silicon Below 80[deg]C	p. A15.6
Amorphous Silicon Alloy Solar Cells Near The Threshold Of Amorphous-To-Microcrystalline Transition	p. A15.4
Polycrystalline Films, Epitaxial Growth, and Properties
Polycrystalline Silicon Thin Films For Microelectronic Applications	p. A8.7
Ion-Assisted Deposition Of Silicon Epitaxial Films With High Deposition Rate Using Low Energy Silicon Ions	p. A7.1
Crystalline Si Films Grown Epitaxially At Low Temperatures By ECR-PECVD	p. A8.6
Low Temperature Selective Si Epitaxy By Reduced Pressure Chemical Vapor Deposition Introducing Periodic Deposition And Etching Cycles With SiH[subscript 4], H[subscript 2] And HCI	p. A8.2
High Resolution Electron Microscopy (HREM) Study Of Chemically Vapor Deposited Polycrystalline Si[subscript 1-x]Ge[subscript x] Thin Films	p. A8.4
Resistivity And Hall Voltage Investigation Of Phosphorus Segregation In Polycrystalline Si[subscript 1-x]Ge[subscript x] Thin Films	p. A8.3
Effect Of Deposition Conditions On The Structural And Mechanical Properties Of Poly SiGe	p. A8.5
In-Line Characterization Of Thin Polysilicon Films By Variable Angle Spectroscopic Ellipsometry	p. A8.8
Catalytic/Hot-Wire CVD: Amorphous to Polycrystalline Films
Si + SiH[subscript 4] Reactions And Implications For Hot Wire CVD Of a-Si:H: Computational Studies	p. A6.1
Gas Phase And Surface Kinetic Processes In Hot-Wire Chemical Vapor Deposition	p. A6.2
Gas-Phase And Surface Reactions Of Decomposed Species In Catalytic CVD	p. A19.1
Drastic Revolution In Catalytic CVD Using "Catalytic Plate" Instead Of "Hot Wire"	p. A6.3
The Influence Of W Filament Alloying On The Electronic Properties Of HWCVD Deposited a-Si:H Films	p. A6.6
Hydrogenated Amorphous Silicon Grown By Hot-Wire CVD At Deposition Rates Up To 1 [mu]m/minute	p. A22.8
N-Type Silicon Films Produced By Hot Wire Technique	p. A6.5
Doping Of Amorphous And Microcrystalline Silicon Films By Hot-Wire CVD And RF-PECVD At Low Substrate Temperatures On Plastic Substrates	p. A22.6
Nanocrystalline Undoped Silicon Films Produced By Hot Wire Plasma Assisted Technique	p. A22.4
Increase Of Hydrogen-Radical Density And Improvement Of The Crystalline Volume Fraction Of Microcrystalline Silicon Films Prepared By Hot-Wire Assisted PECVD Method	p. A19.3
Effect Of Hydrogen Radical On Properties Of Hydrogen In Hydrogenated Microcrystalline Silicon	p. A6.4
Manipulation And Control Of Nucleation And Growth Kinetics With Hydrogen Dilution In Hot-Wire CVD Growth Of Poly-Si	p. A19.2
Si-H Vibration Only At 2000 cm[superscript -1] In Fully Polycrystalline Silicon Films Made By HWCVD	p. A22.1
Implantation, Annealing, and Crystallization
FTIR Spectroscopy And Spectroscopic Ellipsometry Study Of Nanocrystalline Layers Formed By High-Dose Hydrogen And Deuterium Implantation Of Silicon	p. A24.9
Composition And Structure Of SiC[subscript x]:H Films Formed By Plasma Immersion Ion Implantation From A Methane Plasma	p. A23.1
Effects Of Thermal Annealing In The Properties Of PECVD a-SiC Layers	p. A23.7
Thermal Stabilization And Crystallization Of Nanometric Particles Of Si-C-N Produced By RF-Plasma Enhanced Chemical-Vapor-Deposition	p. A24.5
AFM And HREM Observation Of The Pulse Laser Interference Crystallized a-Si:H/a-SiN[subscript x]:H Multilayers	p. A25.1
Excimer Laser Recrystallization Of a-Si Employing Aluminum Masking Window	p. A25.3
Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing	p. A25.4
Control Of Amorphous Silicon Crystallization Using Germanium Deposited By Low Pressure Chemical Vapor Deposition	p. A9.5
Thin Single Crystal Silicon On Oxide By Lateral Solid Phase Epitaxy Of Amorphous Silicon And Silicon Germanium	p. A9.3
Effect Of Ramp Annealing To Ni Induced Lateral Crystallization Of Amorphous Silicon	p. A9.7
Effect Of Nickel In Large Grain Poly-Si Film Formed By Nickel Induced Lateral Crystallization And New Grain Enhancement Method	p. A31.6
Thickness-Dependent Micro-Raman Measurement Of Poly-Si Films Prepared by Metal-Induced-Crystallization Using A Ni Layer	p. A9.6
Structure and Hydrogen
Self-Interstitials Have Never Been Observed In Crystalline Si. How About Amorphous Si?	p. A16.1
Diamagnetic Susceptibility Of Micron Thick a-Si:H Films Measured Via Proton NMR: A Probe Of Structural Disorder	p. A16.3
Small-Angle Neutron Scattering From Device-Quality a-Si:H And a-Si:D Prepared By PECVD And HWCVD	p. A16.2
Microstructure Characterization Of Amorphous Silicon Based Alloys by Inert Gas Effusion Studies	p. A23.4
Anisotropy In Hydrogenated Silicon Thin Films	p. A16.4
A Study Of Non-Infrared-Active Hydrogen Bonding In a-Si:H Thin Film Using Combined Calibrated Temperature Desorption Spectroscopy And FTIR	p. A26.3
Influence Of The Fermi Energy On Si-H Vibrational Modes In Amorphous And Microcrystalline Silicon	p. A20.3
Dependence Of H Diffusion In Hydrogenated Silicon On Doping And The Fermi Level	p. A20.4
A Case For Molecular Hydrogen Being The Mobile H Species In a-Si:H	p. A20.5
T-Site-Trapped Molecular Hydrogen In a-Si:H	p. A26.2
Fast In-Diffusion Of Hydrogen At The Initial Stage Of Hydrogen Plasma Treatment On a-Si:H Films Observed By In-Situ ESR Measurements	p. A26.5
Diffusion Of Hydrogen And Deuterium In Stack Systems Of Si[subscript x]N[subscript y]H[subscript z]/Si[subscript x]N[subscript y]D[subscript z] And Crystalline Si	p. A26.7
Isotope Exchange In Hydrogenated Silicon-Oxynitride (SiON) for 1.55 [mu]m Optical Waveguide Applications	p. A26.8
Band, Band Tail, and Defect States
Ultrafast Dynamics Of Photoexcitations In HWCVD Hydrogenated Amorphous Silicon Alloys	p. A20.1
On The Role Of Charged Defect States And Deep Traps In The Photocarrier Drift And Diffusion In a-Si:H	p. A27.7
A Laplace Transform Technique For Direct Determination Of Density Of Electronic States In Disordered Semiconductors From Transient Photocurrent Data	p. A27.8
Improved High Resolution Post-Transit Spectroscopy For Determining The Density Of States In Amorphous Semiconductors	p. A27.6
Modeling Of Beta Conductivity In Tritiated Amorphous Silicon	p. A27.4
Light Intensity Exponents As Sensitive Tools For The Detection Of Impurities In a-Si:H	p. A27.5
UPS Of a-Si:H [left angle bracket]Er[right angle bracket]: What Is The Energy Of The Er 4f States?	p. A11.1
Er Environment In a-Si:H [left angle bracket]Er[right angle bracket] Prepared By PECVD	p. A11.2
Photoluminescence Of Eu[superscript 3+] In Si/SiO[subscript 2] Nanostructure Films	p. A11.4
Multi-Band Electron Paramagnetic Resonance Study Of Microcrystalline And Cluster Silicon Embedded In SiO[subscript 2]	p. A24.7
Defect And Tail States In Microcrystalline Silicon Investigated By Pulsed ESR	p. A27.3
Electroreflectance Study Of Light-Emitting Porous Silicon	p. A24.10
Spectroscopic Ellipsometry For The Characterization Of The Morphology Of Ultra-Thin Thermal CVD Amorphous And Nanocrystalline Silicon Thin Films	p. A24.3
Metastability and Equilibration
Mechanisms For Metastability In Hydrogenated Amorphous Silicon	p. A3.5
A Study Of The Time Scales Of Processes Responsible For The Light-Induced Degradation Of a-Si:H by Pulse Illumination	p. A3.1
Metastable Defects By Low-Intensity Pulsed Illumination Of Hydrogenated Amorphous Silicon	p. A3.2
A Critical Test Of Defect Creation Models In Hydrogenated Amorphous Silicon Alloys	p. A3.3
Temperature Dependence Of The Photoinduced Degradation And Annealing In a-Si:H	p. A3.4
Photodegradation In a-Si:H Prepared By Hot-Wire CVD As A Function Of Substrate And Filament Temperatures	p. A22.7
X-Ray Photoemission Spectroscopic Study Of Light-Induced Structural Changes In Amorphous Silicon	p. A10.1
I-V Characteristics Of a-Si:H p-i-n Diodes With Uniform And Non-Uniform Defect Distributions	p. A10.3
Model For Staebler-Wronski Degradation Deduced From Long-Term, Controlled Light-Soaking Experiments	p. A10.4
Thin Film Transistors, Displays, and Imagers
Laser Processing of Amorphous Silicon For Polysilicon Devices, Circuits And Flat-Panel Imagers	p. A31.4
Thin Film Transistors Made Of 950[degree]C Polysilicon On Steel Substrate	p. A28.5
Low Temperature Poly-Si Layers Deposited By Hot Wire CVD Yielding A Mobility Of 4.0 cm[superscript 2]V[superscript -1]s[superscript -1] In Top Gate Thin Film Transistors	p. A31.3
Floating Body Induced Transient Characteristics In Polycrystalline Silicon TFTs	p. A28.4
Thin Film Transistors With Electron Mobility Of 40 cm[superscript 2]V[superscript -1]s[superscript -1] Made From Directly Deposited Intrinsic Microcrystalline Silicon	p. A31.2
Roughness Of TFT Gate Metallization And Its Impact On Leakage, Threshold Voltage Shift And Mobility	p. A28.6
Hydrogenated Amorphous Silicon And Silicon Nitride Deposited At Less Than 100[degree]C By ECR-PECVD For Thin Film Transistors	p. A28.2
A Junction Field Effect Transistor Based On Hydrogenated Amorphous Silicon	p. A31.1
A Physically-Based SPICE Model For The Leakage Current In a-Si:H TFTS Accounting For Its Dependencies On Process, Geometrical, And Bias Conditions	p. A28.3
Simulation And Design Of Amorphous Silicon Thin-Film Transistors For Driving Color Detectors	p. A28.1
Hydrogenated Amorphous Silicon Photodiode Technology For Advanced CMOS Active Pixel Sensor Imagers	p. A14.3
Effects Of Buried Insulator-Sensor Interface On The Lateral Conduction Of High Fill Factor a-Si:H Imagers	p. A12.8
a-SiN:H Thin Film Diode For Digital Radiography	p. A12.9
Improved Resolution In A p-i-n Image Sensor By Changing The Structure Of The Doped Layers	p. A14.2
Thin Film Solar Cells and Solar Cell Structures
Hydrogenated Microcrystalline Silicon: From Material To Solar Cells	p. A15.1
Spin-Dependent Processes In Thin-Film Silicon Solar Cells	p. A18.2
Open-Circuit Voltage Physics In Amorphous Silicon Solar Cells	p. A18.3
Recombination In Tritiated Amorphous Silicon	p. A30.1
Efficient 18 A/s Solar Cells With All Silicon Layers Deposited By Hot-Wire Chemical Vapor Deposition	p. A4.3
Comparison Study Of a-SiGe Solar Cells And Materials Deposited Using Different Hydrogen Dilution	p. A30.3
Effects Of Structural Properties Of [mu]c-Si:H Absorber Layers On Solar Cell Performance	p. A15.2
Microstructures Of Microcrystalline Silicon Solar Cells Prepared By Very High Frequency Glow-Discharge	p. A13.6
Measurement Of Impurity Profiles In Microcrystalline Silicon Solar Cells By SIMS	p. A13.5
Preparation Of Microcrystalline Silicon Based Solar Cells At High i-Layer Deposition Rates Using A Gas Jet Technique	p. A4.5
Microcrystalline Si And (Si,Ge) Solar Cells	p. A13.8
Recombination And Resistive Losses In Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells	p. A13.1
Carrier Transport And Photogeneration In Amorphous Silicon/Crystalline Silicon Heterojunctions With i/n And p/n Interfaces	p. A13.2
Suppression Of Plasma Damage On SnO[subscript 2] By Means Of A Different Surface Chemistry Using Dichlorosilane	p. A30.5
Light Trapping By Periodically Structured TCO In The Sub-Micrometer Range	p. A30.6
Modeling The Optical Quantum Efficiency Of Thin Film Amorphous Silicon Solar Cells	p. A30.7
Amorphous Silicon Detectors and Other Devices
Phase Transition In Cr/a-Si:H/V Thin Film Devices	p. A12.10
Correlation Between Surface/Interface States And The Performance Of MIS Structures	p. A12.1
ITO/a-SiN[subscript x]:H/a-Si:H Photodiode With Enhanced Photosensitivity And Reduced Leakage Current Using Polycrystalline ITO Deposited At Room Temperature	p. A12.2
Non Linear Optical Gain In Bulk Barrier Amorphous Silicon Phototransistor	p. A12.3
Hot-Electron Phototransistors In Hydrogenated Amorphous Silicon	p. A14.1
Color Characterization Of a-Si:H-Based Three-Terminal Three-Channel Detector	p. A12.5
Large Area Flexible Amorphous Silicon Position Sensitive Detectors	p. A12.7
Amorphous Silicon Microbolometer Technology	p. A14.4
Low Temperature Thin-Film Microelectromechanical Devices On Plastic Substrates	p. A21.2
Fabrication Of Mechanical Microstructures Using Amorphous Silicon Films On Glass Substrates	p. A21.3
Novel Micro-Photodiodes For Retina Stimulation	p. A21.4
Selective Area Cell Adhesion On Amorphous Silicon Using Patterned Self-Assembled Monolayers	p. A21.5
The Emergence Of An Amorphous-Silicon Based Photonic Technology; Optical Memories To 3-D Photonic Crystals	p. A12.11
Heterogeneous Silicon Transport and Device Applications
Deposition Of Heterogeneous Silicon Thin Films - Structure And Electric States	p. A32.1
Influence Of The Grain Boundary Band Offset On Charge Transport Mechanism In Microcrystalline Silicon Analysed By Numerical Simulation	p. A27.2
Barrier-Controlled Transport In Doped Microcrystalline Si	p. A32.2
Temperature Dependent Transport In Microcrystalline p-i-n Diodes	p. A32.3
Response Time Measurements And Flying Spot Technique In Microcrystalline Silicon Solar Cells	p. A32.4
Near Infrared Detectors And Solar Cells Based On Microcrystalline Silicon Germanium	p. A13.7
Transport Properties Of Polycrystalline Silicon With Various Textures And Microstructures	p. A27.1
Influence Of Mechanical Stress On The Electrical Performance Of Polycrystalline-Silicon Resistors	p. A29.3
Capacitance Voltage Characteristics Of Polysilicon-Polysilicon Oxide-Polysilicon Structures For Three-Dimensional Memory	p. A29.2
Negative Differential Resistance Characteristics Of Silicon Nanocrystal Memory	p. A14.5
Memory Effects In MOS Capacitors With Silicon Rich Oxide Insulators	p. A29.1
Investigation Of Crystalline Silicon Surface Treatments In Amorphous-Crystalline Heterojunction Via Capacitance Measurements	p. A13.3
Amorphous Crystalline Silicon Heterojunction With Silicon Nitride Buffer Layer	p. A13.4
Author Index
Subject Index
Table of Contents provided by Syndetics. All Rights Reserved.

ISBN: 9781558995178
ISBN-10: 155899517X
Series: Mrs Proceedings
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 1091
Published: 10th April 2001
Publisher: CAMBRIDGE UNIV PR
Dimensions (cm): 23.622 x 16.51  x 6.096
Weight (kg): 1.565