By: L. J. Chen (Editor), J. W. Mayer (Editor), J. M. Poate (Editor), K. N. Tu (Editor)

Hardcover

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The feature sizes of microelectronic devices have entered the deep submicron regime. The process integration and structure-properties control of the multilevel metal circuitry demand an interdisciplinary interaction and understanding between manufacturing and research. To realize the vision presented in the national technology road map, material and technological challenges will need to be overcome. For example Cu conductor and its barrier metals and low-dielectric constant insulators are at issue. For materials processing, chemical-mechanical planarization and low-temperature filling of high-aspect ratio vias are challenges. For materials examination, the metrology of submicron structures is nontrivial and for materials reliability, the interplay among multiple driving forces and the response in small-dimension microstructures are intriguing. These issues are the focus of this book from MRS. Topics include: road map, technology and metrology of submicron device structures; reliability issues for Cu metallization; Al interconnects and vias; barrier metal; interlevel low-K dielectrics and contact to Si and compound semiconductors.

Preface
Materials Research Society Symposium Proceedings
10.1[mu]m Interconnect Technology Challenges and the SIA Road Map	p. 3
0.1[mu]m Technology and BEOL	p. 17
A Complete Stochastic Wiring Distribution for Gigascale Integration (GSI)	p. 23
X-ray Microdiffraction for VLSI	p. 35
Phase and Mechanical Stress in and Surrounding TiSi[subscript 2] and CoSi[subscript 2] Lines Studied by Micro-Raman Spectroscopy	p. 47
Dependence of Crystallographic Texture of C54 TiSi[subscript 2] on Thickness and Linewidth in Submicron CMOS Structures	p. 53
Angle Resolved Photoemission from Ultrathin Films of Cu/Ni(001)	p. 59
SIMS and MOKE Studies of Fe/Gd Multilayers on Si	p. 65
Microscopic Driving Forces for Electromigration	p. 73
In-Situ UHV Electromigration in Cu Films	p. 83
Electromigration and Diffusion in Pure Cu and Cu(Sn) Alloys	p. 95
Electromigration Failure Distributions for Multi-Layer Interconnects as a Function of Line Width: Experiments and Simulation	p. 107
Modeling of Temperature Increase Due to Joule Heating During Electromigration Measurements	p. 113
Activation Energy of Electromigration in Copper Thin Film Conductor Lines	p. 121
Electromigration in Submicron Wide Copper Lines	p. 127
Phase Formation in Cu(Sn) Alloy Thin Films	p. 133
Adhesion Reliability of Cu-Cr Alloy Films to Polyimide	p. 141
Modelling Geometrical Effects of Parasitic and Contact Resistance of FET Devices	p. 147
Ultra-Low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature Annealing	p. 153
New Technique for Ohmic Formation	p. 159
Texture and Related Phenomena of Copper Electrodeposits	p. 167
Sub-Half Micron Electroless Cu Metallization	p. 179
Cu Deposition Characteristics into Submicron Contact Holes Employing Self-Sputtering with a High Ionization Rate	p. 185
Oxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering	p. 193
Oxidation Resistance of Copper Alloy Thin Films Formed by Chemical Vapor Deposition	p. 201
Improved Copper Chemical Vapor Deposition Process by Applying Substrate Bias	p. 207
Cu Films on Si(100) by Partially Ionized Beam Deposition	p. 213
MOCVD of Copper from New and Liquid Precursors (hfac)CuL, Where L = 1-Pentene, ATMS, and VTMOS	p. 219
Chemical Vapor Deposition of Copper Films: Influence of the Seeding Layers	p. 225
Characteristics of Cu-Pd Films Grown by Simultaneous Chemical Vapor Deposition from Metalorganic Precursors	p. 231
Chemical-Mechanical Polishing of Copper in Glycerol Based Slurries	p. 237
Current Issues and Future Trends in CMP Consumables for Oxide and Metal Polish	p. 243
Integration of Al-Fill Processes for Contacts and Vias	p. 253
Gas Cluster Ion Beam Processing for ULSI Fabrication	p. 265
Chemical Vapor Deposition of Al Films from Dimethylethylamine Alane on GaAs(100)2x4 Surfaces	p. 277
Plasma Assisted Chemical Vapor Deposition of Aluminum for Metallization in ULSI	p. 283
The Chemical Vapor Deposition of Al-Cu Films Utilizing Independent Aluminum and Copper Organometallic Sources in a Simultaneous Deposition	p. 289
Characterization of Dichlorosilane Based Tungsten Silicide Films for Local Interconnects	p. 297
New Surface Cleaning Method for Heavily-Doped Silicon and Its Application to Selective CVD-W Clad Layer Formation on Single- and Poly-Crystalline Silicon	p. 303
Comparison of CVD and PVD Tungsten for Gigabit-Scale Dram Interconnections	p. 307
Growth and Analysis of Polycrystalline Carbon for MOS Applications	p. 317
Chemical Vapor Deposition of TiN for ULSI Applications	p. 325
The Formation of TiN-Encapsulated Silver Films by Nitridation of Silver-Refractory Metal Alloys in NH[subscript 3]	p. 337
Thermal Metalorganic Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications	p. 343
Low Temperature Deposition of TaCN Films Using Pentakis(Diethylamido)Tantalum	p. 349
Encapsulation of Silver Via Nitridation of Ag/Ti Bilayer Structures	p. 355
Temperature Dependence of Resistivity for TiN and Ti-Si-N Films	p. 361
Impact of Rapid Thermal Annealing of Ti-TiN Bilayers on Subsequent Chemical Vapor Deposition of Tungsten	p. 365
Comparison of TiN Films Produced by TDEAT [actual symbol not reproducible] TDMAT [actual symbol not reproducible], and a New Precursor TEMAT [actual symbol not reproducible]	p. 371
Thermal Stability and Failure Mechanisms of Au/TiW(N)/Si and Au/TiW(N)/SiO[subscript 2]/Si Systems	p. 377
Optimization of PVD Ti/CVD TiN Liner for 0.35 [mu]m Tungsten Plug Technology	p. 383
Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition	p. 389
The Effect of Contact Implants on the Patterning of Tungsten Damascene Interconnects	p. 393
Anomalous Selective Tungsten Growth by Chemical Vapor Deposition	p. 399
Improvement in Wet Etch of TiW Fusible Links in AlCu/TiW/PtSi Metallization for 0.8 [mu]m BICMOS	p. 407
On Advanced Interconnect Using Low Dielectric Constant Materials as Interlevel Dielectrics	p. 415
Synthesis and Characterization of SiOF Thin Films Deposited by ECRCVD for ULSI Multilevel Interconnections	p. 427
Thermal Stability and Interaction Between SiOF and Cu Film	p. 433
Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films	p. 441
Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects	p. 449
Reactive Ion Etching of the Fluorinated Polyimide Film	p. 455
PTFE Nanoemulsions as Spin-On, Low Dielectric Constant Materials for ULSI Applications	p. 463
Evaluation of LPCVD Boron Nitride as a Low Dielectric Constant Material	p. 469
Growth of Epitaxial CoSi[subscript 2] Through a Thin Interlayer	p. 481
Electrical Characterization of Ultra-Shallow Junctions Formed by Diffusion from a CoSi[subscript 2] Diffusion Source	p. 493
Effects of Size and Shape of Lateral Confinement on the Formation of NiSi[subscript 2], CoSi[subscript 2] and TiSi[subscript 2] on Silicon Inside Miniature Size Oxide Openings	p. 499
Mechanisms of Thin Film Ti and Co Silicide Phase Formation on Deep-Sub-Micron Geometries and Their Implications and Applications to 0.18 [mu]m CMOS and Beyond	p. 505
Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates	p. 511
Ti Salicide Technology Using Nitrogen Diffusion from TiN CAP by RTA in an Argon Ambient	p. 517
Rapid Thermal Chemical Vapor Formation of TiSi[subscript 2]: An Alternative Refractory Metallization Process for Device Fabrication	p. 523
Cobalt and Titanium Metallization of SiGeC for Shallow Contacts	p. 529
High Quality GdSl[subscript 1.7] Layers Formed by High Dose Channeled Implantation	p. 535
Thermal Stability of Nickel Silicide Films	p. 541
Epitaxial Growth of NiSi[subscript 2] on (111)Si Inside 0.1-0.6 [mu]m in Size Oxide Openings Prepared by Electron Beam Lithography	p. 547
Amorphous Phase Formation of Titanium Silicide on the 4[actual symbol not reproducible] Off-Axis and On-Axis Si(100) Substrates	p. 553
Effect of Ni-Si Disordered Layer on the Electronic Properties of Ni Silicide Barrier Contacts on Silicon	p. 559
Structural Characteristics of CoGe[subscript 2] Alloy Films Grown Heteroepitaxially on GaAs(100) Substrates Using the Partially Ionized Beam Deposition Technique	p. 565
A Microstructural and Electrical Investigation of Pd/Ge/Ti/Au Ohmic Contact to n-Type GaAs	p. 571
Shallow and Low-Resistive Ohmic Contacts to p-In[subscript 0.53]Ga[subscript 0.47]As Based on Pd/Au and Pd/Sb Metallizations	p. 577
Comparison of Pd/Sn and Pd/Sn/Au Thin-Film Systems for Device Metallization	p. 583
Author Index	p. 591
Subject Index	p. 595
Table of Contents provided by Blackwell. All Rights Reserved.

ISBN: 9781558993303
ISBN-10: 1558993304
Series: MRS Proceedings
Audience: Professional
Format: Hardcover
Language: English
Number Of Pages: 597
Published: 8th November 1996
Publisher: Materials Research Society
Dimensions (cm): 23.4 x 15.7  x 3.6
Weight (kg): 1.0